Search Results - "Sicre, S.B.F."

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    Analysis of P@@db@ Centers in Ultrathin Hafnium Silicate Gate Stacks by Sicre, S.B.F., de Souza, M.M.

    Published in IEEE transactions on electron devices (01-09-2007)
    “…A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 Aring in a hafnium silicate gate…”
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    Journal Article
  2. 2

    Analysis of Centers in Ultrathin Hafnium Silicate Gate Stacks by Sicre, S.B.F., De Souza, M.M.

    Published in IEEE transactions on electron devices (01-09-2007)
    “…A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 ¿ in a hafnium silicate gate dielectric…”
    Get full text
    Journal Article
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