Search Results - "Sibirev, N. V"

New Mode of Vapor−Liquid−Solid Nanowire Growth by Dubrovskii, V. G, Cirlin, G. E, Sibirev, N. V, Jabeen, F, Harmand, J. C, Werner, P

“…We report on the new mode of the vapor−liquid−solid nanowire growth with a droplet wetting the sidewalls and surrounding the nanowire rather than resting on…”
Get full text

Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains by Sibirev, N. V., Berdnikov, Yu. S., Sibirev, V. N.

“…The effect of elastic stresses on the Ga(As, P) crystalline phase of nanowires is studied. It is shown that the elastic stresses can lead to the stable growth…”
Get full text

Impact of Elastic Stress on Crystal Phase of GaP Nanowires by Sibirev, N. V., Berdnikov, Y. S., Sibirev, V. N.

“…In most cases, III–V compounds form a crystal structure, which is stable under certain experimental conditions. Meantime crystal phase of III–V nanowires may…”
Get full text

The Role of Elastic Stresses in the Formation of Nitride Nanowires with Cubic Crystalline Structure by Sibirev, N. V., Berdnikov, Yu. S., Sibirev, V. N.

“…A new theoretical explanation of the growth of nitride nanowires (NWs) in a metastable cubic crystalline phase (sphalerite) is proposed. It is shown that the…”
Get full text

Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires by Berdnikov, Y., Sibirev, N. V., Koryakin, A.

“…In this work, we account the local variations of nanowire number density to extend the previous approaches to modeling of III–V nanowire length distributions…”
Get full text

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires by Koryakin, A. A., Kukushkin, S. A., Sibirev, N. V.

“…The mechanism of the vapor–solid–solid growth of Au-catalyzed GaAs nanowires in the temperature range of 420–450°C is investigated. For the first time, the…”
Get full text

Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires by Sibirev, N. V., Berdnikov, Yu. S., Fedorov, V. V., Shtrom, I. V., Bolshakov, A. D.

“…— A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting…”
Get full text

Growth Modes of GaN Plasma-Assisted MBE Nanowires by Berdnikov, Yu. S., Sibirev, N. V.

“…Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We…”
Get full text

Two Methods of Calculation Ternary Nanowire Composition by Sibirev, N. V., Koryakin, A. A., Berdnikov, Y. S.

“…The growth of ternary nanowires via the vapor-liquid-solid mechanism is one of the possible ways of band gap engineering. However, the dependence of ternary…”
Get full text

Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires by Sibirev, N. V., Fedorov, V. V., Kirilenko, D. A., Ubiyvovk, E. V., Berdnikov, Y. S., Bolshakov, A. D., Mukhin, I. S.

“…GaP as well as GaAs has face-centered cubic crystal phase at standard conditions. Despite it, GaP and GaAs nanowires frequently grow in a metastable hexagonal…”
Get full text

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy by Lugani, L, Ercolani, D, Sorba, L, Sibirev, N V, Timofeeva, M A, Dubrovskii, V G

“…Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the…”
Get more information

Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates by Cirlin, G. E., Dubrovskii, V. G., Soshnikov, I. P., Sibirev, N. V., Samsonenko, Yu. B., Bouravleuv, A. D., Harmand, J. C., Glas, F.

“…We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during…”
Get full text

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment by Dubrovskii, V. G., Cirlin, G. E., Soshnikov, I. P., Tonkikh, A. A., Sibirev, N. V., Samsonenko, Yu. B., Ustinov, V. M.

Get full text

Growth kinetics and crystal structure of semiconductor nanowires by Dubrovskii, V. G., Sibirev, N. V., Harmand, J. C., Glas, F.

Get full text

Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires by Dubrovskii, V. G., Sibirev, N. V.

Get full text

Factors Influencing the Interfacial Abruptness in Axial III–V Nanowire Heterostructures by Dubrovskii, V. G, Sibirev, N. V

“…We present a model that allows for self-consistent description of the interfacial abruptness in axial III–V nanowire heterostructures grown by the…”
Get full text

On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature by Dubrovskii, V. G., Soshnikov, I. P., Cirlin, G. E., Tonkikh, A. A., Samsonenko, Yu. B., Sibirev, N. V., Ustinov, V. M.

“…GaAs nanowhiskers were grown by molecular beam epitaxy on the GaAs(111)B surface activated by Au at the surface temperature of 585 °C. The dependence of…”
Get full text

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment by Zhang, X, Dubrovskii, VG, Sibirev, NV, Cirlin, GE, Sartel, C, Tchernycheva, M, Harmand, JC, Glas, F

“…The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the…”
Get full text

Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy by Dubrovskii, V G, Sibirev, N V, Cirlin, G E, Harmand, J C, Ustinov, V M

“…A theoretical model of nanowire formation by the vapor-liquid-solid mechanism during molecular beam epitaxy and related growth techniques is presented. The…”
Get full text

Growth of GaAs nanoscale whiskers by magnetron sputtering deposition by Dubrovskii, V.G., Soshnikov, I.P., Sibirev, N.V., Cirlin, G.E., Ustinov, V.M.

“…The possibility to grow long (up to several microns) GaAs nanoscale whiskers on the GaAs(1 1 1)B surface activated by Au by magnetron sputtering deposition is…”
Get full text