Search Results - "Shulpina, I. L."

Section Methods of X-Ray Diffraction Topography by Shul’pina, I. L., Suvorov, E. V., Smirnova, I. A., Argunova, T. S.

“…X-ray topography is a group of methods for obtaining diffraction images of structural defects in crystals. Among them, section topography techniques are…”
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Results of the Experiments on the Crystallization of a Ge–Si–Sb Solid Solution under the Conditions of Microgravity on the Soyuz–Apollo Spacecraft by Shul’pina, I. L., Prokhorov, I. A.

“…Objective factors that allow the experiment on growing crystals of a Ge–Si–Sb solid solution on the Soyuz–Apollo spacecraft to take a special place among many…”
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The Formation and Structure of Thermomigration Silicon Channels Doped with Ga by Lomov, A. A., Seredin, B. M., Martyushov, S. Yu, Zaichenko, A. N., Shul’pina, I. L.

“…Vertical through Si(Ga) p channels are created at 1450 K in c-Si(111) plates by thermomigration of local gallium zones. To this end, a technique is proposed…”
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Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals by Korobeinikova, E. N., Prokhorov, I. A., Bezbakh, I. Zh, Shul’pina, I. L.

“…— The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman…”
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Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers by Lomov, A. A., Seredin, B. M., Martyushov, S. Yu, Zaichenko, A. N., Simakin, S. G., Shul’pina, I. L.

“…A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The…”
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Application of X-ray topography to USSR and Russian space materials science by Shul'pina, I L, Prokhorov, I A, Serebryakov, Yu A, Bezbakh, I Zh

“…The authors' experience of the application of X-ray diffraction imaging in carrying out space technological experiments on semiconductor crystal growth for the…”
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Growth striations and dislocations in highly doped semiconductor single crystals by Prokhorov, I.A., Serebryakov, Yu.A., Zakharov, B.G., Bezbakh, I.Zh, Ratnikov, V.V., Shulpina, I.L.

“…Microsegregation and structural inhomogeneities in highly doped GaSb(Si) and InAs(Ga) single crystals grown under various heat and mass transfer conditions…”
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The outlook for X-ray diffraction topography by Shulpina, I. L., Suvorov, E. V.

“…The possibilities of high-resolution X-ray section topography using the geometry of the interference bands to reveal features of the elastic fields of…”
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Relaxor, glassy and ferroic states in Cd2Nb2O7 pyrochlore by Kolpakova, N. N., Shulpina, I. L., Shcheglov, M. P., Waplak, S., Bednarski, W., Nawrocik, W., Wiesner, M.

“…The Gd 3+ EPR spectroscopy, radio-frequency (100 Hz - 1 MHz) diaelectric dispersion and X-ray diffraction studies of Cd 2 Nb 2 O pyrochlore over the…”
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Strains in macroporous silicon introduced by cyclic oxidation by Astrova, E. V., Ratnikov, V. V., Remenyuk, A. D., Shulpina, I. L.

“…Regular trends of macroporous silicon wafer deformation under high‐temperature oxidation are revealed, and the basic parameters describing the sample bending…”
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Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions by Serebryakov, Yu.A., Prokhorov, I.A., Vlasov, V.N., Korobeynikova, E.N., Zakharov, B.G., Shul’pina, I.L., Marchenko, M.P., Fryazinov, I.V.

“…Results of ground-based experiments on crystallization of gallium antimonide on the POLIZON facility carried out within the framework of space experiment…”
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Study of the real structure of basal-plane-faceted sapphire ribbons by Shul’pina, I. L., Bakholdin, S. I., Krymov, V. M., Antonov, P. I.

“…The structure of basal-plane-faceted sapphire ribbons with cross sections of 30 × 1.5 and 50 × 1.5 mm, grown by the Stepanov method, has been investigated…”
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X-ray diffraction topography for materials science by Shul’pina, I. L., Prokhorov, I. A.

“…In this paper, which is dedicated to the 100th anniversary of the discovery of X-ray diffraction (which occurs in 2012), the role and significance of X-ray…”
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X-ray topography study of microsegregation in crystals by Prokhorov, I. A., Bezbakh, I. Z., Zakharov, B. G., Shul’pina, I. L.

“…Concentration microinhomogeneities in crystals were characterized using x-ray topography, digital image processing, and spectral analysis of signals. Based on…”
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Block structure and residual stresses in tubular sapphire single crystals grown by the Stepanov method by Krymov, V. M., Nosov, Yu. G., Bakholdin, S. I., Maslov, V. N., Shul’pina, I. L., Shcheglov, M. P.

“…The formation of the block structure and residual stresses in sapphire single-crystal tubes grown from the melt by the Stepanov method has been studied. The…”
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Blocks and residual stresses in sapphire rods of different crystallographic orientations grown by the Stepanov method by Krymov, V. M., Nosov, Yu. G., Bakholdin, S. I., Maslov, V. N., Shul’pina, I. L.

“…The formation of blocks in shaped sapphire rods of two crystallographic orientations has been investigated. It is shown that, when growth occurs in the…”
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Estimation of quality of GaAs substrates used for constructing semiconductor power devices by Shul’pina, I. L., Ratnikov, V. V., Kozlov, V. A., Soldatenkov, F. Yu, Voitovich, V. E.

“…X-ray topography and high-resolution diffractometry methods are used for testing GaAs wafers from different manufacturers, which are used as substrates for…”
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X-ray study of structural features of GaSb(Si) single crystals grown using a set of diffraction methods under various heat and mass transfer conditions by Prokhorov, I. A., Serebryakov, Yu. A., Korobeinikova, E. N., Zakharov, B. G., Ratnikov, V. V., Shul’pina, I. L.

“…Structural features of GaSb(Si) single crystals grown under various heat and mass transfer conditions were studied by x-ray topography and by double- and…”
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Blocks and residual stresses in shaped sapphire single crystals by Krymov, V.M., Nosov, Yu.G., Bakholdin, S.I., Maslov, V.N., Shul′pina, I.L., Nikolaev, V.I.

“…The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of…”
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X-ray topography contrast of edge dislocations perpendicular to the 6H-SiC crystal surface by Okunev, A. O., Shul’pina, I. L.

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