Search Results - "Shul, R J"

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors by Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., Han, J.

“…Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the…”
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Electrical effects of plasma damage in p-GaN by Cao, X. A., Pearton, S. J., Zhang, A. P., Dang, G. T., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

“…The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of…”
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Inductively coupled plasma-induced etch damage of GaN p-n junctions by Shul, R. J., Zhang, L., Baca, A. G., Willison, C. G., Han, J., Pearton, S. J., Ren, F.

“…Plasma-induced etch damage can degrade the electrical and optical performance of III–V nitride electronic and photonic devices. We have investigated the…”
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AlGaN/GaN quantum well ultraviolet light emitting diodes by Han, J., Crawford, M. H., Shul, R. J., Figiel, J. J., Banas, M., Zhang, L., Song, Y. K., Zhou, H., Nurmikko, A. V.

“…We report on the growth and characterization of ultraviolet GaN quantum well light emitting diodes. The room-temperature electroluminescence emission was…”
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Depth and thermal stability of dry etch damage in GaN Schottky diodes by Cao, X. A., Cho, H., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

“…GaN Schottky diodes were exposed to N2 or H2 inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical…”
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High field transport in GaN/AlGaN heterostructures by Barker, J. M., Ferry, D. K., Goodnick, S. M., Koleske, D. D., Allerman, A., Shul, R. J.

“…Experimental as well as theoretical studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A comparison of these…”
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Inductively coupled plasma etching of GaN by Shul, R. J., McClellan, G. B., Casalnuovo, S. A., Rieger, D. J., Pearton, S. J., Constantine, C., Barratt, C., Karlicek, R. F., Tran, C., Schurman, M.

“…Inductively coupled plasma (ICP) etch rates for GaN are reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power. Using a Cl2/H2/Ar…”
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Schottky diode measurements of dry etch damage in n- and p-type GaN by Cao, X. A., Zhang, A. P., Dang, G. T., Ren, F., Pearton, S. J., Shul, R. J., Zhang, L.

“…n- and p-type GaN was exposed to inductively coupled plasma of N 2 , H 2 , Ar, or Cl 2 / Ar , as a function of source power (0–1000 W) and rf chuck power…”
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Ion-implanted GaN junction field effect transistor by Zolper, J. C., Shul, R. J., Baca, A. G., Wilson, R. G., Pearton, S. J., Stall, R. A.

“…Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca…”
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Wet chemical etching of AlN by Mileham, J. R., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Shul, R. J., Kilcoyne, S. P.

“…Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is…”
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Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor by Han, J., Baca, A. G., Shul, R. J., Willison, C. G., Zhang, L., Ren, F., Zhang, A. P., Dang, G. T., Donovan, S. M., Cao, X. A., Cho, H., Jung, K. B., Abernathy, C. R., Pearton, S. J., Wilson, R. G.

“…A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic…”
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Ion energy distributions at rf-biased wafer surfaces by Woodworth, J. R., Abraham, I. C., Riley, M. E., Miller, P. A., Hamilton, T. W., Aragon, B. P., Shul, R. J., Willison, C. G.

“…We report the measurement of ion energy distributions at a radio frequency (rf)-biased electrode in inductively driven discharges in argon. We compare…”
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High-density plasma etching of compound semiconductors by Shul, R. J., McClellan, G. B., Briggs, R. D., Rieger, D. J., Pearton, S. J., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C.

“…Inductively coupled plasma (ICP) etching of GaAs, GaP, and InP is reported as a function of plasma chemistry, chamber pressure, rf power, and source power…”
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Dry etch damage in InN, InGaN, and InAlN by Pearton, S. J., Lee, J. W., MacKenzie, J. D., Abernathy, C. R., Shul, R. J.

“…Changes in conductivity of InN, In0.5Ga0.5N, and In0.5Al0.5N layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching…”
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Plasma molding over surface topography: Simulation and measurement of ion fluxes, energies and angular distributions over trenches in RF high density plasmas by Doosik Kim, Economou, D.J., Woodworth, J.R., Miller, P.A., Shul, R.J., Aragon, B.P., Hamilton, T.W., Willison, C.G.

“…A two-dimensional (2-D) fluid/Monte Carlo (MC) simulation model was developed to study plasma "molding" over a trench. The radio frequency sheath potential…”
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High temperature electron cyclotron resonance etching of GaN, InN, and AlN by Shul, R. J., Kilcoyne, S. P., Hagerott Crawford, M., Parmeter, J. E., Vartuli, C. B., Abernathy, C. R., Pearton, S. J.

“…Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl2/H2/CH4/Ar and Cl2/H2/Ar plasmas. Using…”
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Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs by MAEDA, T, LEE, J. W, SHUL, R. J, HAN, J, HONG, J, LAMBERS, E. S, PEARTON, S. J, ABERNATHY, C. R, HOBSON, W. S

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Plasma chemistries for high density plasma etching of SiC by Hong, J., Shul, R. J., Zhang, L., Lester, L. F., Cho, H., Hahn, Y. B., Hays, D. C., Jung, K. B., Pearton, S. J., Zetterling, C. -M., Östling, M.

“…A variety of different plasma chemistries, including SF sub(6), Cl sub(2), ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density…”
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Epitaxially-grown GaN junction field effect transistors by Zhang, L., Lester, L.F., Baca, A.G., Shul, R.J., Chang, P.C., Willison, C.G., Mishra, U.K., Denbaars, S.P., Zolper, J.C.

“…Junction field effect transistors (JFETs) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The dc and…”
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Hydrogen-decorated lattice defects in proton implanted GaN by Weinstein, Marcie G., Song, C. Y., Stavola, Michael, Pearton, S. J., Wilson, R. G., Shul, R. J., Killeen, K. P., Ludowise, M. J.

“…Several vibrational bands were observed near 3100 cm−1 in GaN that had been implanted with hydrogen at room temperature and subsequently annealed. Our results…”
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