Search Results - "Shu, D.Y."

Evolution of microstructure and texture in copper during repetitive extrusion-upsetting and subsequent annealing by Chen, Q., Shu, D.Y., Lin, J., Wu, Y., Xia, X.S., Huang, S.H., Zhao, Z.D., Mishin, O.V., Wu, G.L.

“…The evolution of the microstructure and texture in copper has been studied during repetitive extrusionupsetting（REU） to a total von Mises strain of 4.7 and…”
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Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics by Chou, W.Y., Mai, Y.S., Cheng, H.L., Yeh, C.Y., Kuo, C.W., Tang, F.C., Shu, D.Y., Yew, T.R., Wen, T.C.

“…Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N 2, H 2, Ar, He, and high…”
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Reactive ion etching of Si 1− xGe x alloy with hydrogen bromide by Wang, C.S., Shu, D.Y., Hsieh, W.Y., Tsai, M.-J.

“…Epitaxial Si 1− x Ge x x≦0.25 films were reactive ion etched in hydrogen bromide (HBr) plasma. The etch characteristics are similar to single-crystal Si. For…”
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Investigation of silicon-on-insulator (SOI) substrate preparation using the smart-cutTM process by Chao, D.S., Shu, D.Y., Hung, S.B., Hsieh, W.Y., Tsai, M.-J.

“…A promising technology called smart-cutTM process based on the hydrogen ion implantation and wafer bonding was proposed to prepare the SOI wafers. In this…”
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Reactive ion etching of Si1-xGex alloy with hydrogen bromide by WANG, C. S, SHU, D. Y, HSIEH, W. Y, TSAI, M.-J

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Optimization and fabrication of planar edge termination techniques for a high breakdown voltage and low leakage current p-i-n diode by Chao, D.S., Hung, C.C., Shu, D.Y., Kao, M.-J., Hsieh, W.Y., Tsai, M.-J., Benson Wang, Bill Teng, Tsai, H.P., Rick Lin, Max Chen

“…The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings (OFP-FLR) were investigated and…”
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In-line inspection on thickness of sputtered HfO/sub 2/ and Hf metal ultra-thin films by spectroscopic ellipsometry by Chuo, Y., Shu, D.Y., Lee, L.S., Hsieh, W.Y., Tsai, M.J., Wang, A., Hung, S.B., Tzeng, P.J., Chou, Y.W.

“…HfO 2 -based dielectrics are most promising high k materials to substitute SiO 2 for the MOS gate dielectric. To guarantee the deposition process under well…”
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