Search Results - "Shterengas, L."

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials by Vurgaftman, I., Belenky, G., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Sarney, W. L., Svensson, S. P.

“…The absorption spectra for the antimonide-based type-II superlattices (SLs) for detection in the long-wave infrared (LWIR) are calculated and compared to the…”
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InAsSb-based heterostructures for infrared light modulation by Donetsky, D., Liu, J., Kipshidze, G., Shterengas, L., Belenky, G., Sarney, W. L., Svensson, S. P.

“…We demonstrate the strong modulation of the long wave infrared transmission of GaInSb/InAsSb/AlInAsSb heterostructures under carrier injection. This results in…”
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AlInAsSb for M-LWIR detectors by Sarney, W.L., Svensson, S.P., Wang, D., Donetsky, D., Kipshidze, G., Shterengas, L., Lin, Y., Belenky, G.

“…Growth of unrelaxed and unstrained AlzIn1−zAsySb1−y with a lattice constant=6.23Å was demonstrated. InAs1-xSbx with this lattice constant produces a bandgap…”
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Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves by Kim, J. G., Shterengas, L., Martinelli, R. U., Belenky, G. L., Garbuzov, D. Z., Chan, W. K.

“…We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a…”
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High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers by Kim, J. G., Shterengas, L., Martinelli, R. U., Belenky, G. L.

“…We have fabricated and characterized 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 μm…”
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A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility by Okishev, A V, Westerfeld, D, Shterengas, L, Belenky, G

“…A stable 3-microm-wavelength, GaSb-based diode operated at room temperature has been investigated as a potential laser source for cryogenic target layering at…”
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Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials by Wang, D., Svensson, S.P., Shterengas, L., Belenky, G.

“…Dilute-nitride InAs bulk materials with up to 2.25% of nitrogen were grown by molecular beam epitaxy on InAs substrates. Photoluminescence (PL) and optical…”
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2.7- \mu m GaSb-Based Diode Lasers With Quinary Waveguide by Chen, J., Kipshidze, G., Shterengas, L., Hosoda, T., Wang, Y., Donetsky, D., Belenky, G.

“…Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mum with room-temperature continuous-wave (CW) output power of 600 mW and peak…”
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Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers by Jianfeng Chen, Donetsky, D., Shterengas, L., Kisin, M.V., Kipshidze, G., Belenky, G.

“…InGaAsSb/AlGaAsSb quantum well (QW) diode laser structures with either 1% or 1.5% compressively strained QWs were grown on GaSb substrates by molecular beam…”
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Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells by Vinnichenko, M. Ya, Vorobjev, L. E., Firsov, D. A., Mashko, M. O., Balagula, R. M., Belenky, G., Shterengas, L., Kipshidze, G.

“…The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the…”
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Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures by Vinnichenko, M. Ya, Firsov, D. A., Vorobjev, L. E., Mashko, M. O., Shterengas, L., Belenky, G.

“…The time dependences of the photoluminescence intensity is studied for InGaAsSb/AlGaAsSb quantum wells with different barrier widths and different…”
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Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory by Thränhardt, A., Kuznetsova, I., Schlichenmaier, C., Koch, S. W., Shterengas, L., Belenky, G., Yeh, J.-Y., Mawst, L. J., Tansu, N., Hader, J., Moloney, J. V., Chow, W. W.

“…Gain properties of GaInNAs lasers with different nitrogen concentrations in the quantum wells are investigated experimentally and theoretically. Whereas…”
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High-power 2.3-μm GaSb-based linear laser array by Shterengas, L., Belenky, G.L., Gourevitch, A., Donetsky, D., Kim, J.G., Martinelli, R.U., Westerfeld, D.

“…High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide…”
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Carrier heating in quantum wells under optical and current injection of electron-hole pairs by Vorobjev, L. E., Vinnichenko, M. Ya, Firsov, D. A., Zerova, V. L., Panevin, V. Yu, Sofronov, A. N., Thumrongsilapa, P., Ustinov, V. M., Zhukov, A. E., Vasiljev, A. P., Shterengas, L., Kipshidze, G., Hosoda, T., Belenky, G.

“…Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature…”
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Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures by Firsov, D. A., Shterengas, L., Kipshidze, G., Zerova, V. L., Hosoda, T., Thumrongsilapa, P., Vorobjev, L. E., Belenky, G.

“…The dynamics of interband photoluminescence has been studied at various temperatures and excitation levels in structures with quantum wells based on InGaAsSb…”
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MOVPE growth of Ga(As)SbN on GaSb substrates by Huang, J.Y.T., Mawst, L.J., Jha, S., Kuech, T.F., Wang, D., Shterengas, L., Belenky, G., Meyer, J.R., Vurgaftman, I.

“…GaSb 1− y N y and GaAs 1− y − z Sb y N z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for…”
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Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers by Suchalkin, S., Shterengas, L., Kisin, M., Luryi, S., Belenky, G., Kaspi, R., Ongstad, A., Kim, J. G., Martinelli, R. U.

“…The sources of temperature sensitivity of the threshold current in type-I and type-II mid-infrared semiconductor lasers are investigated. Measurements of the…”
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Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures by Vorobjev, L. E., Firsov, D. A., Vinnichenko, M. Ya, Zerova, V. L., Melentyev, G. A., Mashko, M. O., Shterengas, L., Kipshidze, G., Belenky, G., Hosoda, T.

“…Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of…”
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Measurements of α-factor in 2–2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers by Shterengas, L., Belenky, G. L., Gourevitch, A., Kim, J. G., Martinelli, R. U.

“…Spectra of the linewidth enhancement factor (α) of room-temperature-operated high-power 2–2.5 μm In(Al)GaAsSb/GaSb type-I quantum-well (QW) lasers were…”
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Continuous wave operation of diode lasers at 3.36 μ m at 12 ° C by Shterengas, L., Belenky, G., Hosoda, T., Kipshidze, G., Suchalkin, S.

“…GaSb-based type-I quantum-well diode lasers emitting at 3.36 μ m at 12 ° C with 15 mW of continuous wave output power are reported. Devices with two or four…”
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