Search Results - "Shrestha, Pawana"

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE by Romanczyk, Brian, Guidry, Matthew, Zheng, Xun, Shrestha, Pawana, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.

“…The advantage of GaN is the capability of producing amplifiers with high output power and efficiency. At microwave frequencies, this performance has been…”
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High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz by Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Karnaty, Rohit R., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

“…Though GaN HEMTs have primarily been used for power amplification, they are also well suited for receiver applications. In the front-end of receivers,…”
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Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs by Li, Weiyi, Romanczyk, Brian, Guidry, Matthew, Akso, Emre, Hatui, Nirupam, Wurm, Christian, Liu, Wenjian, Shrestha, Pawana, Collins, Henry, Clymore, Christopher, Keller, Stacia, Mishra, Umesh K.

“…In this article, N-polar GaN-on-sapphire deep-recess metal-insulator-semiconductor (MIS)-high-electron-mobility transistors (HEMTs) with a breakthrough…”
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6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates by Liu, Wenjian, Romanczyk, Brian, Guidry, Matthew, Hatui, Nirupam, Wurm, Christian, Li, Weiyi, Shrestha, Pawana, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.

“…This letter reports on the <inline-formula> <tex-math notation="LaTeX">W </tex-math></inline-formula>-band power performance of N-polar GaN deep recess…”
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Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands by Karnaty, Rohit R., Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Mishra, Umesh K., Buckwalter, James F.

“…This article develops a modified Massachusetts Institute of Technology (MIT) virtual source gallium nitride (GaN) (MVSG)-high-electron-mobility transistor…”
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Design, Fabrication and Characterization of Highly Linear N-Polar GaN MIS-HEMT for Mm-Wave Receiver Applications by Shrestha, Pawana

“…Gallium Nitride is widely employed for microwave and mm-wave applications. Though GaN HEMTs have primarily been used for power amplification, they are also…”
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First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz by Akso, Emre, Collins, Henry, Clymore, Christopher, Li, Weiyi, Guidry, Matthew, Romanczyk, Brian, Wurm, Christian, Liu, Wenjian, Hatui, Nirupam, Hamwey, Robert, Shrestha, Pawana, Keller, Stacia, Mishra, Umesh K.

“…In this letter, the first four-finger (4 <inline-formula> <tex-math notation="LaTeX">\times</tex-math> </inline-formula> 25 <inline-formula> <tex-math…”
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Modeling and Measurement of Dual-Threshold N-polar GaN HEMTS for High-Linearity RF Applications by Karnaty, Rohit R., Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Mishra, Umesh K., Buckwalter, James F.

“…This paper presents a dual-threshold N-polar GaN MISHEMT for linearization of the transconductance in RF applications where low noise and high-linearity are…”
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Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise by Guidry, Matthew, Shrestha, Pawana, Liu, Wenjian, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Karnaty, Rohit, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

“…N-polar GaN deep recess MISHEMTs devices have shown record mm-wave power density and efficiency under CW conditions, and high linearity receive performance…”
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A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT by Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Karnaty, Rohit R., Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

“…N-polar GaN MISHEMTs have recently demonstrated excellent power performance and power-added efficiency at 94 GHz [1] . At mm-wave frequencies and high data…”
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Virtual-Source Modeling of N-polar GaN MISHEMTS by Karnaty, Rohit R., Guidry, Matthew, Shrestha, Pawana, Romanczyk, Brian, Hatui, Nirupam, Zheng, Xun, Wurm, Christian, Li, Haoran, Keller, Stacia, Mishra, Umesh K., Buckwalter, James F.

“…Nitrogen-polar (N-polar) Gallium Nitride (GaN) deep-recess high-electron mobility transistors (HEMTs) have demonstrated exceptional power density (8 W/mm) and…”
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