Search Results - "Shokhovets, S."

Birefringence and refractive indices of wurtzite GaN in the transparency range by Shokhovets, S., Himmerlich, M., Kirste, L., Leach, J. H., Krischok, S.

“…Birefringence and anisotropic refractive indices of wurtzite GaN within the spectral range from 0.58 eV to 3.335 eV were determined combining optical…”
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Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy by Himmerlich, M., Eisenhardt, A., Shokhovets, S., Krischok, S., Räthel, J., Speiser, E., Neumann, M. D., Navarro-Quezada, A., Esser, N.

“…The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS)…”
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Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors by Shokhovets, S., Ambacher, O., Gobsch, G.

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Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors by Shokhovets, S., Ambacher, O., Meyer, B. K., Gobsch, G.

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Optical spectroscopy of photovoltaic systems based on low-bandgap polymers by Biank, H.C., Shokhovets, S., Gobsch, G., Runge, E., Sensfuss, S., Klemm, E., Andrae, G.

“…We report on the optical characterization of a low-bandgap thieno[3,4-b]pyrazine phenylenevinylene copolymer. Individual layers on quartz and Si substrates as…”
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Momentum matrix element and conduction band nonparabolicity in wurtzite GaN by Shokhovets, S., Gobsch, G., Ambacher, O.

“…Comparing the imaginary part of the dielectric function of wurtzite GaN measured by spectroscopic ellipsometry at room temperature with calculations, we found…”
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“Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties by Shokhovets, S., Gobsch, G., Lebedev, V., Ambacher, O.

“…Studying GaN films exposed to Ar plasma by spectroscopic ellipsometry and reflectance, we found an “anomalous” pseudodielectric function (PDF) for which the…”
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Refractive index and gap energy of cubic InxGa1−xN by Goldhahn, R., Scheiner, J., Shokhovets, S., Frey, T., Köhler, U., As, D. J., Lischka, K.

“…Spectroscopic ellipsometry studies have been carried out in the energy range from 1.5 to 4.0 eV in order to determine the complex refractive indices for cubic…”
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The dielectric function of a GaAs/AlGaAs single quantum well: calculation and comparison with experiment by Herasimovich, A., Shokhovets, S., Goldhahn, R., Gobsch, G.

“…The dielectric function (DF) of a modulation doped (0 0 1) GaAs/AlGaAs (Al content of x=0.33) single quantum well structure containing a two-dimensional…”
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Study of the linear electro-optic effect in α-GaN by electroreflectance by Shokhovets, S, Goldhahn, R, Gobsch, G

“…The linear electro-optic (Pockels) effect for hexagonal GaN was studied by electrolytic electroreflectance spectroscopy. The electric field strength and space…”
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Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity by Shokhovets, S., Fuhrmann, D., Goldhahn, R., Gobsch, G., Ambacher, O., Hermann, M., Karrer, U., Eickhoff, M.

“…We observed a peculiar dependence of low-temperature electroreflectance spectra of Pt/GaN Schottky diodes with Ga- and N-face polarity on the bias voltage…”
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Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance by Shokhovets, S., Fuhrmann, D., Goldhahn, R., Gobsch, G., Ambacher, O., Hermann, M., Eickhoff, M.

“…Electroreflectance studies of Pt/GaN Schottky diodes were performed in the temperature range between 5 and 300 K. The data were analysed using the electric…”
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Determination of Group III Nitride Film Properties by Reflectance and Spectroscopic Ellipsometry Studies by Goldhahn, R., Shokhovets, S., Scheiner, J., Gobsch, G., Cheng, T.S., Foxon, C.T., Kaiser, U., Kipshidze, G.D., Richter, W.

“…Reflectance measurements under normal incidence of light and variable angle spectroscopic ellipsometry (SE) studies are applied for characterizing hexagonal…”
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Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions by Weih, P., Stauden, Th, Ecke, G., Shokhovets, S., Zgheib, Ch, Voelskow, M., Skorupa, W., Ambacher, O., Pezoldt, J.

“…In the present study cubic 3C–(Si1–xC1–y)Gex+y solid solutions were created by using ion beam synthesis. 3C–SiC thin layers grown on on‐axis Si (111)…”
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Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy by Schenk, H.P.D., Kipshidze, G.D., Lebedev, V.B., Shokhovets, S., Goldhahn, R., Kräuβlich, J., Fissel, A., Richter, Wo

“…Epitaxial wurtzite aluminum nitride (AlN) and gallium nitride (GaN) films have been grown on Si(1 1 1) by plasma-assisted molecular beam epitaxy (PA-MBE)…”
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Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG by Goldhahn, R., Buchheim, C., Shokhovets, S., Gobsch, G., Ambacher, O., Link, A., Hermann, M., Stutzmann, M., Smorchkova, Y., Mishra, U.K., Speck, J.S.

“…We have carried out photoreflectance measurements in order to determine the electric field strength FB within the unintentionally doped barriers of Ga‐face…”
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MBE growth of cubic AlyGa1-yN/GaN heterostructures-structural, vibrational and optical properties by AS, D. J, FREY, T, BARTELS, M, LISCHKA, K, GOLDHAHN, R, SHOKHOVETS, S, TABATA, A, FERNANDEZ, J. R. L, LEITE, J. R

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Determination of Optical Constants for Cubic InxGa1-xN Layers by Goldhahn, R., Scheiner, J., Shokhovets, S., Frey, T., Köhler, U., As, D.J., Lischka, K.

“…Spectroscopic ellipsometry studies have been carried out in the energy range from 1.5 to 4.0 eV in order to determine the complex refractive indices for cubic…”
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Publisher's Note: Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors [Phys. Rev. B 78 , 035207 (2008)] by Shokhovets, S., Ambacher, O., Meyer, B. K., Gobsch, G.

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Conduction band parameters of ZnO by Shokhovets, S., Gobsch, G., Ambacher, O.

“…We calculated the ordinary and extraordinary imaginary part of the dielectric function close to and above the absorption edge of wurtzite ZnO. Comparison to…”
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