Search Results - "Shmidt, M."

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  1. 1

    Quality Assessment of Processed Graphene Chips for Biosensor Application by Shmidt, Natalia M., Shabunina, Evgeniya I., Gushchina, Ekaterina V., Petrov, Vasiliy N., Eliseyev, Ilya A., Lebedev, Sergey P., Priobrazhenskii, Sergei Iu, Tanklevskaya, Elena M., Puzyk, Mikhail V., Roenkov, Alexander D., Usikov, Alexander S., Lebedev, Alexander A.

    Published in Materials (01-08-2023)
    “…The quality of graphene intended for use in biosensors was assessed on manufactured chips using a set of methods including atomic force microscopy (AFM), Raman…”
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  2. 2

    Electron irradiation of near‐UV GaN/InGaN light emitting diodes by Lee, In‐Hwan, Polyakov, Alexander Y., Smirnov, N. B., Shchemerov, I. V., Shmidt, N. M., Tal'nishnih, N. A., Shabunina, E. I., Cho, Han‐Su, Hwang, Sung‐Min, Zinovyev, R. A., Didenko, S. I., Lagov, P. B., Pearton, S. J.

    “…Irradiation with 6 MeV electrons of near‐UV (peak wavelength 385–390 nm) multi‐quantum‐well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in…”
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    Functional and Morphological Changes in the Pyramidal Layer of the Hippocampus in Rats with Encephalopathy Induced by Prolonged Exposure to Gravitational Overloading by Tyurenkov, I. N., Smirnov, A. V., Mednikov, D. S., Shmidt, M. V., Ekova, M. R., Kurkin, D. V., Bakulin, D. A., Volotova, E. V.

    Published in Neuroscience and behavioral physiology (01-05-2020)
    “…Studies of morphofunctional changes in the hippocampus using a model of impaired cerebral hemodynamics are needed for understanding the mechanisms of formation…”
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  6. 6

    Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes by Dobrov, V. A., Kozlovski, V. V., Mescheryakov, A. V., Usychenko, V. G., Chernova, A. S., Shabunina, E. I., Shmidt, N. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2019)
    “…It is established experimentally that noticeable changes in the I – V characteristics and low-frequency noise in 4 H -SiC pin diodes irradiated by electrons…”
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  7. 7

    Morphological Changes and Characteristics of the Expression of Serine Racemase in the Rat Hippocampus after Repeated Exposure to Negative Gravitational Overload by Mednikov, D. S., Smirnov, A. V., Shmidt, M. V., Tyurenkov, I. N., Kurkin, D. V., Bakulin, D. A., Volotova, Ye. V.

    Published in Neuroscience and behavioral physiology (15-03-2019)
    “…Objectives: To study the morphometric parameters and levels of expression of serine racemase in the rat hippocampus after repeated gravitational overloading in…”
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  8. 8

    Morphological Changes and Characteristics of the Expression of Serine Racemase in the Hippocampus of Rats Exposed to Multiple Negative Gravitational Overloads by Mednikov, D. S., Smirnov, A. V., Shmidt, M. V., Tyurenkov, I. N., Kurkin, D. V., Bakulin, D. A., Volotova, E. V.

    “…Objectives. To study the morphometric parameters and levels of expression of serine racemase in the hippocampus of rats repeatedly exposed to gravitational…”
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  9. 9

    Expression of Beclin-1 and LAMP-2 in Rat Hippocampus under Conditions of Simulated Gravity Overload in the Caudocranial Vector by Smirnov, A.V., Mednikov, D. S., Shmidt, M. V., Kurkin, D. V., Bakulin, D. A., Volotova, E. V., Tyurenkov, I. N.

    “…Structural changes in the rat hippocampus in response to chronic cerebrovascular disorders induced by gravity exposure in the caudocranial vector were studied…”
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  10. 10

    Morphological Changes and Characteristics of the Expression of Serine Racemase in the Rat Hippocampus in Combined Stress by Smirnov, A. V., Grigor’eva, N. V., Ekova, M. R., Shmidt, M. V., Mednikov, D. S., Tyurenkov, I. N., Kurkin, D. V., Volotova, E. V.

    Published in Neuroscience and behavioral physiology (01-10-2017)
    “…Structural changes in the ventral segment of the hippocampus and the characteristics of the expression of serine racemase were studied in rats aged 12 and 24…”
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  11. 11

    Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures by Shmidt, N.M., Vergeles, P.S., Yakimov, E.E., Yakimov, E.B.

    Published in Solid state communications (01-02-2011)
    “…The effect of low-energy electron-beam (e-beam) irradiation on the InGaN-related cathodoluminescence in multiple quantum well (MQW) InGaN/GaN light-emitting…”
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  12. 12

    Effect of Combined Stress on Morphological Changes and Expression of NO Synthases in Rat Ventral Hippocampus by Smirnov, A. V., Tyurenkov, I. N., Shmidt, M. V., Ekova, M. R., Mednikov, D. S., Borodin, D. D.

    “…Adult rats were subjected to 7-day combined stress with stochastic changes of stressors of different modalities (noise, vibration, pulsating bright light)…”
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  13. 13

    Patterns of TRPM7 Expression in Hypothalamic and Hippocampal Neurons in Modeling of Nutritional Magnesium Defi ciency by Smirnov, A. V., Spasov, A. A., Shmidt, M. V., Snigur, G. L., Evsyukov, O. Yu, Zheltova, A. A.

    “…Patterns of expression of TRPM7, the major cellular magnesium transporters in neurons of the hypothalamic region and hippocampus, were studied…”
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  14. 14

    Comparison of morphofunctional features of the ventral hippocampus in adult and old rats after combined stress by Ekova, M. R., Smirnov, A. V., Shmidt, M. V., Tyurenkov, I. N., Volotova, E. V., Kurkin, D. V., Grigorieva, N. V., Ermilov, V. V., Mednikov, D. S.

    Published in Advances in gerontology (01-07-2016)
    “…Animals were exposed to 7 days of combined stress in a special device consisting of six isolated compartments of similar volumes. During the 30-min exposure,…”
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    Patterns of TRPM7 expression in hypothalamic and hippocampal neurons in modeling of nutritional magnesium deficiency by Smirnov, A V, Spasov, A A, Shmidt, M V, Snigur, G L, Evsyukov, O Yu, Zheltova, A A

    “…Patterns of expression of TRPM7, the major cellular magnesium transporters in neurons of the hypothalamic region and hippocampus, were studied…”
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  16. 16

    Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices by Talnishnikh, N. A., Ivanov, A. E., Shabunina, E. I., Shmidt, N. M.

    Published in Optics and spectroscopy (01-02-2024)
    “…A decrease in external quantum efficiency (EQE) of commercial LEDs based on MQW InGaN/GaN at wavelengths of 445, 530 and MQW AlGaN/GaN at 280 nm was…”
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  17. 17

    Electron accumulation layer at the Cs-covered GaN(0001) n -type surface by Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V.

    Published in Applied physics letters (23-08-2004)
    “…We report on the observation of photoemission from the Cs ∕ Ga N ( 0001 ) n -type interface by excitation of visible light in the transparency region of GaN…”
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  18. 18

    Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs by Lee, In-Hwan, Polyakov, A. Y., Hwang, Sung-Min, Shmidt, N. M., Shabunina, E. I., Tal'nishnih, N. A., Smirnov, N. B., Shchemerov, I. V., Zinovyev, R. A., Tarelkin, S. A., Pearton, S. J.

    Published in Applied physics letters (07-08-2017)
    “…Electrical stressing of near-UV (peak wavelength 390–395 nm) multi-quantum-well GaN/InGaN light emitting diodes at a high drive current of 650 mA and elevated…”
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    Temperature-Dependent Decrease in Efficiency in Power Blue InGaN/GaN LEDs by Shmidt, N. M., Shabunina, E. I., Chernyakov, A. E., Ivanov, A. E., Tal’nishnikh, N. A., Zakgeim, A. L.

    Published in Technical physics letters (01-12-2020)
    “…Temperature-dependent decline in the external quantum efficiency (EQE) of blue light-emitting diodes, which is at a maximum at j < 10 A/cm 2 and becomes…”
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  20. 20

    Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds by Shabunina, E. I., Chernyakov, A. E., Ivanov, A. E., Kartashova, A. P., Kuchinsky, V. I., Poloskin, D. S., Talnishnikh, N. A., Shmidt, N. M., Zakgeim, A. L.

    Published in Journal of applied spectroscopy (01-03-2023)
    “…The zone fluctuation potentials (ZFPs) in quantum wells located in the space charge region (SCR) of the p–n junction and the lateral ZFPs in quantum wells…”
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