Search Results - "Shmagin, I."

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements by Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., Mishra, U. K., DenBaars, S. P.

“…The absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room…”
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Visible-blind GaN Schottky barrier detectors grown on Si(111) by Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., Shmagin, I. K., Chang, Y. C., Muth, J. F., Kolbas, R. M.

“…We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature…”
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Numerical and Experimental Studies of the Plate Heat Exchanger Module of the Small-Sized Gas Turbine Engine with Heat Recovery by Remchukov, S. S., Osipov, I. V., Lebedinskii, R. N., Polyakov, E. A., Shmagin, K. I.

“…The thermal and hydraulic characteristics of the plate heat exchange surface with crisscrossing corrugations and the heat exchange matrix were received…”
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Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition by Keller, S., Keller, B.P., Kapolnek, D., Mishra, U.K., DenBaars, S.P., Shmagin, I.K., Kolbas, R.M., Krishnankutty, S.

“…InGaN bulk layers and single quantum wells were grown on 1.4 to 2.4 μm thick GaN on sapphire films by atmospheric pressure metalorganic chemical vapour…”
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Growth and characterization of GaN single crystals by Balkaş, C.M., Sitar, Z., Bergman, L., Shmagin, I.K., Muth, J.F., Kolbas, R., Nemanich, R.J., Davis, R.F.

“…Up to 3 mm long GaN single crystals were grown by sublimation of cold pressed GaN pellets or evaporation of gallium (Ga) metal under an ammonia (NH 3) flow in…”
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Optical metastability in bulk GaN single crystals by Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., Davis, R. F.

“…Bulk GaN single crystals were grown from cold pressed GaN powder by sublimation in flowing ammonia. Optical transmission measurements indicated that the…”
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Selective deposition and luminescence characterization of Eu-doped Y2O3 nanoparticles by microwave plasma synthesis by Milewski, P. D., Streiffer, S. K., Kingon, A. I., Shmagin, I. K., Kolbas, R. M., Krishnankutty, S.

“…— Nanosize phosphor particles of Eu‐doped Y2O3 were synthesized at room temperature by an organometallic vapor‐phase microwave plasma‐synthesis technique…”
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Reconfigurable optical properties in InGaN/GaN quantum wells by Shmagin, I. K., Muth, J. F., Kolbas, R. M., Mack, M. P., Abare, A. C., Keller, S., Coldren, L. A., Mishra, U. K., DenBaars, S. P.

“…Reconfigurable optical properties were studied in InGaN/GaN multiple quantum well (MQW) structures. It was observed that a short time exposure to a high…”
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Optical data storage in InGaN/GaN heterostructures by Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., Park, J., Shelton, B. S., Lambert, D. J. H.

“…Optical storage data was realized using an InGaN/GaN single heterostructure. It was observed that exposure to a high power density ultraviolet light…”
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Investigation of n‐ and p‐type doping of GaN during epitaxial growth in a mass production scale multiwafer‐rotating‐disk reactor by Yuan, C., Salagaj, T., Gurary, A., Thompson, A. G., Kroll, W., Stall, R. A., Hwang, C.‐Y., Schurman, M., Li, Y., Mayo, W. E., Lu, Y., Krishnankutty, S., Shmagin, I. K., Kolbas, R. M., Pearton, S. J.

“…n‐ and p‐doped GaN thin films have been epitaxially grown on c‐sapphire substrates by metal‐organic chemical‐vapor deposition in a production scale…”
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Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition by Dupuis, R.D., Grudowski, P.A., Eiting, C.J., Shmagin, I.C., Kolbas, R.M., Rosner, S.J.

“…We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on…”
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Optical metastability in InGaN/GaN heterostructures by Shmagin, I.K., Muth, J.F., Kolbas, R.M., Dupuis, R.D., Grudowski, P.A., Eiting, C.J., Park, J., Shelton, B.S., Lambert, D.J.H.

“…Optical metastability was studied in an InGaN/GaN single heterostructure. It was observed that an exposure to a high intensity ultraviolet (UV) light…”
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Photoluminescence characteristics of GaN/InGaN quantum wells by Shmagin, I K, Muth, J F, Kolbas, R M, Krishnankutty, S

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Selective deposition and luminescence characterization of Eu‐doped Y 2 O 3 nanoparticles by microwave plasma synthesis by Milewski, P. D., Streiffer, S. K., Kingon, A. I., Shmagin, I. K., Kolbas, R. M., Krishnankutty, S.

“…Abstract— Nanosize phosphor particles of Eu‐doped Y 2 O 3 were synthesized at room temperature by an organometallic vapor‐phase microwave plasma‐synthesis…”
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Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells by Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., Coldren, L. A., Mishra, U. K., Baars, S. P. Den

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Photoluminescence characteristics of GaN/InGaN/GaN quantum wells: III-V Nitrides and silicon carbide by SHMAGIN, I. K, MUTH, J. F, KOLBAS, R. M, KRISHNANKUTTY, S, KELLER, S, ABARE, A. C, COLDREN, L. A, MISHRA, U. K, DEN BAARS, S. P

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Optical properties of InGaN double heterostructures and quantum wells grown by metalorganic chemical vapor deposition by Dupuis, R.D., Grudowski, P.A., Eiting, C.J., Park, J., Shelton, B.S., Lambert, D.J.H., Shmagin, I., Kolbas, R.M.

“…High-quality III-V nitride epitaxial films and heterostructures are of great importance for a wide variety of electronic and optoelectronic devices. In this…”
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Photoluminescence from mechanically milled Si and SiO 2 spowders by Shen, T. D., Shmagin, I., Koch, C. C., Kolbas, R. M., Fahmy, Y., Bergman, L., Nemanich, R. J., McClure, M. T., Sitar, Z., Quan, M. X.

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Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and Al/sub x/Ga/sub 1-x/N on SiC(0001) substrates and device-related research by Davis, R.F., Balkas, C.M., Bergman, L., Bremser, M.D., Nam, O.H., Perry, W.G., Shmagin, I., Sitar, Z., Ward, B.L., Zheleva, T., Kolbas, R., Nemanich, R.

“…Summary form only given. Single crystals of AlN to 1 mm thickness were grown at 1950-2250/spl deg/C on 10/spl times/10 mm/sup 2/ 6H-SiC substrates via…”
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Optical properties of wide bandgap III-V nitride semiconductors by Kolbas, R.M., Shmagin, I.K., Muth, J.F.

“…Applications of III-V nitride materials, such as GaN, AlN, InN and their alloys include blue-green light emitting devices, solar blind photodetectors, and high…”
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