Search Results - "Shkurko, A. P."

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system by Alekseev, A. N., Byrnaz, A. É., Krasovitsky, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’sky, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Shkurko, A. P., Chalyi, V. P.

“…The effect of growth conditions (V/III ratio, substrate temperature) on the properties of materials in AlN-GaN systems is discussed. A concept of the growth of…”
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Indium droplet formation during molecular beam epitaxy of InGaN by Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu

“…Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser…”
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Pyrometer unit for GaAs substrate temperature control in an MBE system by Aleksandrov, S. E., Gavrilov, G. A., Kapralov, A. A., Sotnikova, G. Yu, Chernykh, D. F., Alekseev, A. N., Dudin, A. L., Kogan, I. V., Shkurko, A. P.

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Multilayer AlN∕AlGaN∕GaN∕AlGaN Heterostructures for High-Power Field-Effect Transistors Grown by Ammonia MBE by Alekseev, A. N.

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MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen by Petrov, S. I., Kaidash, A. P., Krasovitskii, D. M., Sokolov, I. A., Pogorel’skii, Yu. V., Chalyi, V. P., Shkurko, A. P., Stepanov, M. V., Pavlenko, M. V., Baranov, D. A.

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Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3 by Pogorel’skii, M. Yu, Alekseev, A. N., Pogorel’skii, Yu. V., Shkurko, A. P.

“…A new approach to obtaining bulk AlN single crystals by vapor-phase epitaxy has been tested. NH 3 and Al vapor were used as growth reagents. The following…”
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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures by Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.

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Use of molecular beam epitaxy for high-power AlGaAs laser production by Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.

“…The results of statistical analysis of the characteristics of high-power semiconductor lasers grown by molecular beam epitaxy are presented. Three types of…”
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Measurement of the layer thickness on rotating substrates in molecular-beam epitaxy apparatus by Aleksandrov, S. E., Gavrilov, G. A., Sotnikova, G. Yu, Alekseev, A. N., Baranov, D. A., Shkurko, A. P.

“…A simple and effective method is developed for synchronous recording of an interference signal to measure the thickness of a layer grown on a rotating…”
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High-spin complex [FeL2(NCS)2]·H2O [L = 3,5-di(pyrimidin-2-yl)-4H-1,2,4-triazol-4-amine]: Synthesis and properties by Bushuev, M. B., Krivopalov, V. P., Daletskii, V. A., Varnek, V. A., Sheludyakova, L. A., Yushina, I. V., Shkurko, O. P.

“…Complex [FeL 2 (NCS) 2 ]·H 2 O (L = 3,5-di(pyrimidin-2-yl)-4 H -1,2,4-triazol-4-amine) was prepared as the first example of complex compounds of transition…”
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A universal pyrometer for molecular-beam epitaxy setups by Sotnikova, G. Yu, Gavrilov, G. A., Sukhanov, V. L., Chernykh, D. F., Aleksandrov, S. E., Kapralov, A. A., Alekseev, A. N., Shkurko, A. P.

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates by Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.

“…We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the…”
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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates by Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.

“…Preliminary results on the transfer of the ammonia MBE technology of nitride transistor heterostructures to AlN/SiC substrates. The main device properties…”
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GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer by Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.

“…We have studied the influence of conditions used for the growth of InGaN layers by the molecular beam epitaxy (with ammonia as a source of nitrogen) on the…”
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Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE by Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.

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Indium droplet formation during molecular beam epitaxy of InGaN by CHALY, V. P, BORISOV, B. A, DEMIDOV, D. M, KRASOVITSKY, D. M, POGORELSKY, Yu. V, SHKURKO, A. P, SOKOLOV, I. A, KARPOV, S. Yu

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Use of molecular beam epitaxy for high-power AlGaAs laser production by CHALY, V. P, DEMIDOV, D. M, FOKIN, G. A, KARPOV, S. YU, MYACHIN, V. E, POGORELSKY, YU. V, RUSANOVICH, I. YU, SHKURKO, A. P, TER-MARTIROSYAN, A. L

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