Search Results - "Shiqin Xiao"

Formation of HfSiON/SiO2/Si-substrate gate stack with low leakage current for high-performance high-κ misfets by YAMAGUCHI, Masaomi, SAKODA, Tsunehisa, MINAKATA, Hiroshi, SHIQIN XIAO, MORISAKI, Yusuke, IKEDA, Kazuto, MISHIMA, Yasuyoshi

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Formation of HfSiON/SiO2/Si-substrate gate stack with low leakage current for high-performance high-[kappa] MISFETs by Yamaguchi, M, Sakoda, T, Minakata, H, Shiqin Xiao, Shiqin Xiao, Morisaki, Y, Ikeda, K, Mishima, Y

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Formation and evaluation of CeN thin films by Xiao, Shiqin Q, Takai, Osamu

“…CeN x films are prepared by rf ion plating and analyzed by X-ray photoelectron spectroscopy (XPS). Ar/N 2 flow ratios are varied and Ar gas is found to play a…”
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Laser dicing for higher chip productivity by Suzuki, Natsuki, Shiqin, Xiao, Atsumi, Kazuhiro, Uchiyama, Naoki, Ohba, Takayuki

“…This paper describes increased chip productivity using a laser dicing technique called stealth dicing (SD), in which optimized aberration correction is…”
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Comparison of TiN deposition by rf magnetron sputtering and electron beam sustained arc ion plating by SHIQIN XIAO, LUNGU, C. P, TAKAI, O

“…TiN films were deposited both by electron beam (EB) sustained Ti arc ion plating and by reactive magnetron sputtering in nitrogen atmosphere. Although the…”
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1st quantitative failure-rate calculation for the actual large-scale SRAM using ultra-thin gate-dielectric with measured probability of the gate-current fluctuation and simulated circuit failure-rate by Sakoda, T., Tamura, N., Shiqin Xiao, Minakata, H., Morisaki, Y., Nishigaya, K., Saiki, T., Uetake, T., Iwasaki, T., Ehara, H., Matsuyama, H., Shimizu, H., Hashimoto, K., Kimoto, M., Kase, M., Ikeda, K.

“…We investigated the influence over intermittent SRAM failure by gate current, Ig, fluctuation for the first time. In this paper, we also describe the…”
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Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies by Takahashi, H., Minakata, H., Morisaki, Y., Shiqin Xiao, Nakabayashi, M., Nishigaya, K., Sakoda, T., Ikeda, K., Morioka, H., Tamura, N., Kase, M., Nara, Y.

“…We have proposed inhibition mechanism of common Al-capping technique for pMOSFET threshold-voltage (V th ) control for the first time, and have established…”
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Formation of HfSiON/SiO/sub 2//Si-substrate gate stack with low leakage current for high-performance high-/spl kappa/ MISFETs by Yamaguchi, M., Sakoda, T., Minakata, H., Shiqin Xiao, Morisaki, Y., Ikeda, K., Mishima, Y.

“…The authors found the method to form HfSiON film with an ultrathin SiO/sub 2/ interfacial layer on the Si substrate by oxidizing the HfSiN. The HfSiN film was…”
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Formation of HfSiON/SiO sub(2)/Si-substrate gate stack with low leakage current for high-performance high- Kappa MISFETs by Yamaguchi, M, Sakoda, T, Minakata, H, Xiao, Shiqin, Morisaki, Y, Ikeda, K, Mishima, Y

“…The authors found the method to form HfSiON film with an ultrathin SiO sub(2) interfacial layer on the Si substrate by oxidizing the HfSiN. The HfSiN film was…”
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