Search Results - "Shinriki, H."

Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMs by Kaga, T., Kure, T., Shinriki, H., Kawamoto, Y., Murai, F., Nishida, T., Nakagome, Y., Hisamoto, D., Kisu, T., Takeda, E., Itoh, K.

“…A self-aligned stacked-capacitor cell called the CROWN cell (a crown-shaped stacked-capacitor cell), used for experimental 64-Mb-DRAMs operated at 1.5 V, has…”
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UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs by Shinriki, H., Nakata, M.

“…A capacitor fabrication technique is developed to obtain an extremely thin Ta/sub 2/O/sub 5/ film with an effective SiO/sub 2/ film thickness of 2.8 nm…”
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Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta/sub 2/O/sub 5/ film by Shinriki, H., Nakata, M., Nishioka, Y., Mukai, K.

“…A capacitor technology developed to obtain extremely thin Ta/sub 2/O/sub 5/ dielectric film with an effective SiO/sub 2/ film thickness down to 3 nm…”
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ON-state programming and OFF-state reliability of metal-to-metal antifuse based 10 nm-thick SiNx film for 3.3 V operation by Tamura, Y., Shinriki, H.

“…Reliability of newly a developed metal-to-metal antifuse (Al-0.5%Cu/10nm-thick SiNx/amorphous-like WSix) with very low ON-resistance below 10 ohm has been…”
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Ultra-thin Ta2O5dielectric film for high-speed bipolar memories by Nishioka, Y., Homma, N., Shinriki, H., Mukai, K., Yamaguchi, K., Uchida, A., Higeta, K., Ogiue, K.

“…A new capacitor technology, with extremely thin (5.3-20 nm) Ta 2 O 5 film deposition and weak-spot oxidation, is developed to realize high capacitance and high…”
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Promising storage capacitor structures with thin Ta2O5 film for low-power high-density DRAM's by SHINRIKI, H, KISU, T, KIMURA, S.-I, NISHIOKA, Y, KAWAMOTO, Y, MUKAI, K

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UV-O)3) and dry-O)2): Two-step-annealed chemicalvapor-deposited Ta)2)O)5) films for storagedielectrics of 64-Mb DRAMs by Shinriki, H, Nakata, M

“…A capacitor fabrication technique is developed to obtain an extremely thin Ta)2)O)5) film with an effective SiO )2) film thickness of 2.8 nm (equivalent to 12…”
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UV-O3 and dry-O2 : two-step annealed chemical vapor-deposited Ta2O5 films for storage dielectrics of 64-Mb DRAM's by SHINRIKI, H, NAKATA, M

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UV-O sub(3) and dry-O sub(2): Two step annealed chemical vapor-deposited Ta sub(2)O sub(5) films for storage dielectrics of 64-Mb DRAM's by Shinriki, H, Nakata, M

“…A new capacitor fabrication technique is developed to obtain extremely thin Ta sub(2)O sub(5) film with an effective SiO sub(2) film thickness down to 2.8 nm…”
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Novel PEALD-Ru formation technique using H2 & H2/N2 plasma as a seed layer for direct CVD-Cu filling by Daekyun Jeong, Inoue, H., Ohno, Y., Namba, K., Shinriki, H.

“…In this paper, novel Ru film formation technique by plasma enhanced atomic layer deposition (PEALD) is reported to be extremely promising as a seed layer for…”
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Ultra-thin Ta2O5 dielectric film for high-speed bipolar memories by NISHIOKA, Y, HOMMA, N, SHINRIKI, H, MUKAI, K, YAMAGUCHI, K, UCHIDA, A, HIGETA, K, OGIUE, K

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Oxidized Ta2O5/Si3N4 dielectric films on poly-crystalline Si for dRAM's by SHINRIKI, H, NISHIOKA, Y, OHJI, Y, MUKAI, K

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Extremely low ON-resistance metal-to-metal antifuses with Al-Cu/10 nm-thick p-SiNx/Al-Cu structure for next generation very high speed FPGAs : Field programmable gate arrays by TAMURA, Y, KIMURA, Y, TSUTSUI, C, SHINRIKI, H

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Conformal chemical vapor deposition TiN(111) film formation as an underlayer of Al for highly reliable interconnects by KAIZUKA, T, SHINRIKI, H, TAKEYASU, N, OHTA, T

“…Chemical vapor deposition (CVD) TiN film having the (111) preferred orientation and conformal step coverage was developed for the first time. The key processes…”
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Two-step annealing technique for leakage current reduction inchemical-vapor-deposited Ta(2)O(5) film by Shinriki, H, Nakata, M, Nishioka, Y, Mukai, K

“…A capacitor technology developed to obtain extremely thin Ta(2 )O(5) dielectric film with an effective SiO(2) film thickness down to 3 nm (equivalent to 11…”
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Oxidized Ta/sub 2/O/sub 5//Si/sub 3/N/sub 4/ dielectric films on poly-crystalline Si for dRAMs by Shinriki, H., Nishioka, Y., Ohji, Y., Mukai, K.

“…A dielectric film technology characterized by a novel multilayer structure formed by oxidation of Ta/sub 2/O/sub 5//Si/sub 3/N/sub 4/ films on polysilicon has…”
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Oxidized Ta sub(2)O sub(5)/Si sub(3)N sub(4) dielectric films on poly-crystalline Si for dRAM's by Shinriki, H, Nishioka, Y, Ohji, Y, Mukai, K

“…A new dielectric film technology characterized by a novel multilayer structure formed by oxidation of Ta sub(2)O sub(5)/Si sub(3)N sub(4) films on poly-silicon…”
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Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta sub(2)O sub(5) film by Shinriki, H, Nakata, M, Nishioka, Y, Mukai, K

“…A new capacitor technology has been developed to obtain extremely thin Ta sub(2)O sub(5) dielectric film with an effective SiO sub(2) film thickness down to 3…”
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Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta2O5 film by SHINRIKI, H, NAKATA, M, NISHIOKA, Y, MUKAI, K

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Most promising metal-to-metal antifuse based 10 nm-thick p-SiN/sub x/ film for high density and high speed FPGA application by Tamura, Y., Shinriki, H.

“…A novel metal-to-metal antifuse has been developed for highly reliable and high performance 3.3 V operated FPGAs. Dielectric breakdown reliability is…”
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