Search Results - "Shindou, Hiroyuki"

An SRAM SEU Cross Section Curve Physics Model by Kobayashi, Daisuke, Hirose, Kazuyuki, Sakamoto, Keita, Tsuchiya, Yuta, Okamoto, Shogo, Baba, Shunsuke, Shindou, Hiroyuki, Kawasaki, Osamu, Makino, Takahiro, Ohshima, Takeshi

“…Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due to transient noise caused by a single strike of…”
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Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID by Kobayashi, Daisuke, Mori, Yoshiharu, Matsuura, Daisuke, Kusano, Masaki, Narita, Takanori, Ishii, Shigeru, Hirose, Kazuyuki, Sakamoto, Keita, Okamoto, Shogo, Baba, Shunsuke, Shindou, Hiroyuki, Kawasaki, Osamu, Makino, Takahiro, Ohshima, Takeshi

“…Single-event upset (SEU) hardness varies across dies, wafers, and lots-even just after fabrication and further across time. Mechanisms of postfabrication…”
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Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-Based Flip-Flop Under Proton Irradiation by Sakamoto, Keita, Baba, Shunsuke, Kobayashi, Daisuke, Okamoto, Shogo, Shindou, Hiroyuki, Kawasaki, Osamu, Makino, Takahiro, Mori, Yoshiharu, Matuura, Daisuke, Kusano, Masaki, Narita, Takanori, Ishii, Shigeru, Hirose, Kazuyuki

“…The effects of buried-well potential perturbation under the buried-oxide (BOX) layer are studied in both a heavy-ion single event upset (SEU) test and a…”
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Major pitfall of new clinical training systems in Japan: possible collapse of basic medical research by Shindou, Hiroyuki

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Surgical Treatment of dialysis-associated spondylosis by BABA, Hideo, TAGAMI, Atsushi, ADACHI, Shinji, HIURA, Takeshi, SHINDOU, Hiroyuki

“…【Objective】The purposes of this study were to classify the lesions of dialysis-associated spondylosis and evaluate the resultsof surgical treatment.【Subjects…”
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Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array by Takeuchi, Kozo, Sakamoto, Toshitsugu, Tada, Munehiro, Takeyama, Akinori, Ohshima, Takeshi, Kuboyama, Satoshi, Shindou, Hiroyuki

“…Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal-oxide-semiconductor (CMOS) are investigated with both heavy-ion and…”
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Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test by Kuboyama, Satoshi, Mizuta, Eiichi, Nakada, Yuki, Shindou, Hiroyuki

“…The damage sites introduced by single-event gate rupture (SEGR) in Si vertical power MOSFETs were physically analyzed to clarify their location and structures…”
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Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions by Kuboyama, Satoshi, Mizuta, Eiichi, Nakada, Yuki, Shindou, Hiroyuki, Michez, Alain, Boch, Jerome, Saigne, Frederic, Touboul, Antoine

“…The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to…”
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Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs by Kuboyama, S., Maru, A., Shindou, H., Ikeda, N., Hirao, T., Abe, H., Tamura, T.

“…It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage…”
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Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits by Makihara, A., Yokose, T., Tsuchiya, Y., Miyazaki, Y., Abe, H., Shindou, H., Ebihara, T., Maru, A., Morikawa, K., Kuboyama, S., Tamura, T.

“…Redundant pairs of SOI transistors have been utilized as a Radiation Hardening-By-Design technique. Their applicability was subsequently extended for analog…”
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DICE-Based Flip-Flop With SET Pulse Discriminator on a 90 nm Bulk CMOS Process by Maru, A, Shindou, H, Ebihara, T, Makihara, A, Hirao, T, Kuboyama, S

“…In recent years, due to the demand for increased integration and device scaling, integrated circuits (ICs) have been designed with the design rule less than…”
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Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs by Kuboyama, S., Shindou, H., Hirao, T., Matsuda, S.

“…It has been demonstrated that there are substantial differences between the form of defects introduced by electrons and those introduced by protons and heavy…”
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