Search Results - "Shin Yuan Wang"

Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current by Wang, Shin-Yuan, Chang, Shu-Jui, Huang, Yu-Che, Chih, Jia Hao, Lin, Yu-Chin, Cheng, Chao-Ching, Radu, Iuliana, Hu, Chenming, Chien, Chao-Hsin

“…In this work, we develop an ultrathin epitaxial h-AlN as an interfacial layer (IL) between HfO2 and monolayer WS2 channel by atomic layer deposition (ALD). The…”
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van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C by Chang, Shu-Jui, Wang, Shin-Yuan, Huang, Yu-Che, Chih, Jia Hao, Lai, Yu-Ting, Tsai, Yi-Wei, Lin, Jhih-Min, Chien, Chao-Hsin, Tang, Ying-Tsan, Hu, Chenming

“…We report the demonstration of growing two-dimensional (2D) hexagonal-AlN (h-AlN) on transition metal dichalcogenide (TMD) monolayers (MoS2, WS2, and WSe2) via…”
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Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic Device by Chou, Yu-Che, Tsai, Chien-Wei, Yi, Chin-Ya, Chung, Wan-Hsuan, Wang, Shin-Yuan, Chien, Chao-Hsin

“…In this work, we fabricated charge-trapping MemTransistors (CTMTs) on a germanium (Ge) substrate with a single-charge-trapping-layer gate-stack or a…”
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Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment by Ming-Li Tsai, Jun-Yu Ko, Shin-Yuan Wang, Chao-Hsin Chien

“…We investigate p-type GaSb MOS capacitors with various HfO 2 thicknesses grown using an atomic layer deposition. GaSb surfaces treated with ex-situ chemical…”
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Acute Effects of Wearing Different Surgical Face Masks during High-Intensity, Short-Rest Resistance Exercise on Cardiorespiratory and Pulmonary Function and Perceptual Responses in Weightlifters by Wang, Shin-Yuan, Chiu, Chih-Hui, Hsu, Chin-Hsien, Chou, Chun-Chung, Hsu, Shuo-Min, Shapu, Lu-Bi, Chao, Tai-Chen, Chen, Che-Hsiu

“…This study investigated the effect of wearing a typical surgical mask (SM) or a three-dimensional (3D) SM (3DSM) during whole-body, high-intensity, short-rest…”
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Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger by Meng-Chien, Lee, Wei-Lun, Chen, Yi-Yang, Zhao, Shin-Yuan, Wang, Guang-Li Luo, Chao-Hsin Chien

“…We disclosed HfO2-based dielectric of superb electrical properties on p-type Si0.8Ge0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum…”
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The Effect of Repetitive Drop Jumps among Different Heights on Bilateral Asymmetry of Countermovement Jumps by Wang, I-Lin, Li, Yu-Ge, Su, Yu, Yao, Shun, Zhang, Ke-Ke, Chen, Che-Hsiu, Wang, Shin-Yuan

“…Background: The study explored the influence of repeated drop jumps (DJs) from different drop heights on the lower extremity bilateral asymmetry and muscle…”
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A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures by Feng, Li-Wei, Chang, Chun-Yen, Chang, Yao-Feng, Chen, Wei-Ren, Wang, Shin-Yuan, Chiang, Pei-Wei, Chang, Ting-Chang

“…Large (>102) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at…”
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Inhibition of the MEK/ERK pathway reduces microglial activation and interleukin-1-beta expression in spinal cord ischemia/reperfusion injury in rats by Lu, Kang, MD, PhD, Cho, Chung-Lung, PhD, Liang, Cheng-Loong, MD, Chen, Shang-Der, MD, Liliang, Po-Chou, MD, Wang, Shin-Yuan, MS, Chen, Han-Jung, MD, PhD

“…Objectives Ischemic spinal cord injury is a serious complication of aortic surgery. Although the extracellular signal-regulated kinases 1 and 2 are generally…”
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In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition by Nguyen, H. Q., Trinh, H. D., Chang, E. Y., Lee, C. T., Shin Yuan Wang, Yu, H. W., Hsu, C. H., Nguyen, C. L.

“…We demonstrate the good-performance In 0.5 Ga 0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor…”
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BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance by Teng, Li-Cheng, Huang, Yu-Che, Chang, Shu-Jui, Wang, Shin-Yuan, Lin, Yu-Hsien, Chien, Chao-Hsin

“…In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5 nm HZO utilizing Molybdenum (Mo) as the…”
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A two-dimensional RAKE receiver architecture with an FFT-based matched filtering by SHIN YUAN WANG, HUANG, Chia-Chi, CHAT CHIN QUEK

“…This work proposes a two-dimensional (2-D) RAKE receiver, which is a spatial-temporal matched filter implemented in the frequency domain. To form a beam…”
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Learning effects of triple continuous jumping snatch intervention on the second pull of the snatch for novice lifters by Wang, Shin-Yuan, Lan, Pei-Tzu, Hsu, Tai-Ger

“…This study aimed to compare the effects of triple continuous jumping snatch (TCJS) intervention training on the technique and performance of novice lifters…”
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Suppressing Threshold Voltage Drift in Sub-2 nm In2O3 Transistors with Improved Thermal Stability by Lin, Kris KH, Teng, Li-Cheng, Weng, Tzu-Ting, Lin, Tzu-Jie, Lin, Jian-Cun, Wang, Shin-Yuan, Ho, Po-Hsun, Woon, Wei-Yen, Kei, Chi-Chung, Cho, Tsung-Te, Chien, Chao-Hsin, Lien, Der-Hsien

“…Ultrathin In 2 O 3 films with a thickness of less than 2 nm have emerged as highly intriguing semiconductor channels owing to their exceptional electronic…”
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Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition by Lee, Meng-Chien, Zhao, Yi-Yang, Chen, Wei-Lun, Wang, Shin-Yuan, Chen, Yi-Xuan, Luo, Guang-Li, Chien, Chao-Hsin

“…This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high-<inline-formula> <tex-math…”
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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment by Lee, Meng-Chien, Chung, Nien-Ju, Lin, Hung-Ru, Lee, Wei-Li, Chung, Yun-Yan, Wang, Shin-Yuan, Luo, Guang-Li, Chien, Chao-Hsin

“…We successfully fabricated p-MOSFETs on Si 0.8 Ge 0.2 substrate using trimethylaluminum (TMA) pre-doping and NH 3 plasma as interfacial layer (IL) treatment…”
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Effect of different resistance increments during warm-up on the snatch performance of male weightlifters by Yang, Wen-Chieh, Wang, Shin-Yuan, Chiu, Chih-Hui, Ye, Xin, Weng, Ming-Chia, Jhang, Jhih-Ciang, Chen, Che-Hsiu

“…This study investigated the effect of different resistance increments during warm-up on snatch performance of male weightlifters. Nine male college…”
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High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory by Chung, Yun-Yan, Cheng, Chao-Ching, Chou, Yu-Che, Chueh, Wei-Chen, Chung, Wan-Hsuan, Yu, Zhihao, Hung, Terry Yi-Tse, Huang, Lin-Yun, Wang, Shin-Yuan, Teng, Li-Cheng, Chang, Wen-Ho, Li, Lain-Jong, Chien, Chao-Hsin

“…The development of high-accuracy analog synapse deep neural networks entails devising novel materials and innovative memory structures. We demonstrated an…”
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Hormonal responses in heavy training and recovery periods in an elite male weightlifter by Wu, Ching-Lin, Hung, Wei, Wang, Shin-Yuan, Chang, Chen-Kang

“…Previous investigations have not established the detailed time course of the hormonal responses in these periods mostly due to insufficient sampling…”
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Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing by Feng, Li-Wei, Chang, Chun-Yen, Chang, Yao-Feng, Chang, Ting-Chang, Wang, Shin-Yuan, Chen, Shih-Ching, Lin, Chao-Cheng, Chen, Shih-Cheng, Chiang, Pei-Wei

“…In this paper, the influence of a 600 °C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt…”
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