Search Results - "Shin, Somyeong"
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Robust graphene wet transfer process through low molecular weight polymethylmethacrylate
Published in Carbon (New York) (01-03-2016)“…Poly (methyl methacrylate) (PMMA) is commonly used during the transfer process of chemical vapor deposited (CVD) graphene. Since PMMA on graphene surfaces is…”
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The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects
Published in AIP advances (01-10-2016)“…We intentionally generated surface defects in WSe2 using a low energy argon (Ar+) ion-beam. We were unable to detect any changes in lattice structure through…”
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Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors
Published in Applied physics letters (07-12-2015)“…We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using…”
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Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film
Published in Journal of materials science (01-01-2016)“…LiF is a transparent polar dielectric with the highest band gap among known insulators. The introduction of a LiF/graphene stacked structure provides two…”
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Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets
Published in NPJ 2D materials and applications (12-06-2020)“…Despite intensive studies on van der Waals heterostructures based on two-dimensional layered materials, isotype vdW heterojunctions, which consist of two…”
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Graphene transfer with self-doping by amorphous thermoplastic resins
Published in Carbon (New York) (01-01-2017)“…The wet transfer of graphene requires sacrificial layer, which can support graphene during the removal of metallic substrate and prevent mechanical damage of…”
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Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoOx layer
Published in Materials today communications (01-12-2022)“…The realization of high-performance graphene-based electronics, including transparent electrodes, flexible devices, and energy storage, is often hindered by…”
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Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoO layer
Published in Materials today communications (01-12-2022)Get full text
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Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density
Published in Current applied physics (01-11-2015)“…We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET)…”
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Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors
Published in Applied physics letters (07-12-2015)“…We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS{sub 2} transistors. Ti-MoS{sub 2}-graphene heterojunction…”
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