Search Results - "Shimoyama, Kenji"

High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process by Shibata, Hiroyuki, Waseda, Yoshio, Ohta, Hiromichi, Kiyomi, Kazumasa, Shimoyama, Kenji, Fujito, Kenji, Nagaoka, Hirobumi, Kagamitani, Yuji, Simura, Rayko, Fukuda, Tsuguo

“…A relatively large sample of gallium nitride (GaN) was grown as a single crystal using the hydride vapor phase epitaxy (HVPE) process. The thermal diffusivity…”
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Phase formation of Mn-doped zinc silicate in water at high-temperatures and high-pressures by Takesue, Masafumi, Shimoyama, Kenji, Murakami, Sachiko, Hakuta, Yukiya, Hayashi, Hiromichi, Smith, Richard L.

“…Phase formation of Mn-doped zinc silicate (Zn 2SiO 4:Mn 2+, ZSM) in high-temperature and high-pressure water was studied by in situ observations with a…”
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Parallel β-sheet as a Novel Template for Polymerization of Diacetylene by Mori, Takeshi, Shimoyama, Kenji, Fukawa, Youichi, Minagawa, Keiji, Tanaka, Masami

“…The peptide having diacetylene at its side group formed parallel β-sheet structure in crystalline solid, and solid-state polymerization of the diacetylene…”
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Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure by Horie, Hideyoshi, Nagao, Satoru, Shimoyama, Kenji, Fujimori, Toshinari

“…In order to fabricate weakly index guided buried-stripe type 980 nm laser diodes (LDs) precisely and reproducibly, we have developed a novel double etch stop…”
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Continuous hydrothermal synthesis of ZnGa2O4:Mn2+ nanoparticles at temperatures of 300–500°C and pressures of 25–35MPa by Hayashi, Hiromichi, Suino, Atsuko, Shimoyama, Kenji, Takesue, Masafumi, Tooyama, Suguru, Smith, Richard L.

“…[Display omitted] ► Hydrothermal flow reaction was successfully utilized to fabricate ZnGa2O4 nanocrystallites. ► Hydrothermal reaction of the mixture of Zn,…”
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Formation of α- and β-phase Mn-doped zinc silicate in supercritical water and its luminescence properties at Si/(Zn+Mn) ratios from 0.25 to 1.25 by Takesue, Masafumi, Suino, Atsuko, Shimoyama, Kenji, Hakuta, Yukiya, Hayashi, Hiromichi, Smith, Richard Lee

“…Mn-doped Zn 2SiO 4 (ZSM) was synthesized in supercritical water under batch conditions to study the effect of Si molar ratio on ZSM phase formation and its…”
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Formation of zinc silicate in supercritical water followed with in situ synchrotron radiation X-ray diffraction by Takesue, Masafumi, Shimoyama, Kenji, Shibuki, Kazuaki, Suino, Atsuko, Hakuta, Yukiya, Hayashi, Hiromichi, Ohishi, Yasuo, Smith, Richard Lee

“…Phase formation mechanism of a highly practical inorganic phosphor, α-Zn 2SiO 4:Mn 2+ crystal in supercritical water firstly has been investigated in situ with…”
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CW operation and extremely low capacitance of TJ-BH MQW laser diodes fabricated by entire MOVPE by SHIMOYAMA, K, KATOH, M, SUZUKI, Y, SATOH, T, INOUE, Y, NAGAO, S, GOTOH, H

“…Transverse junction buried heterostructure laser diodes using an MQW active layer have been successfully fabricated by an entire MOVPE. The employed MQW has…”
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Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer by Lee, Hyo-Jong, Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Seog Woo, Lee, Sang Hyun, Goto, Hiroki, Hong, Soon-Ku, Cho, Meoung Whan, Yao, Takafumi, Fujito, Kenji, Shimoyama, Kenji, Namita, Hideo, Nagao, Satoru

“…Recently, an innovative method of fabricating vertical light-emitting diode (LED) was introduced by the chemically lift-off (CLO) process. Such fabrication of…”
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Characteristics of 1.3 µm Laser Diode with Carbon-Doped InAlAs Layer by Kurihara, Kaori, Arai, Nobuhiro, Shimoyama, Kenji

“…InAlGaAs-based laser diodes with carbon doping have been demonstrated. The epitaxial conditions of the carbon doping in InAlAs are critically limited in terms…”
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High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HYPE Process by Shibata, Hiroyuki, Waseda, Yoshio, Ohta, Hiromichi, Kiyomi, Kazumasa, Shimoyama, Kenji, Fujito, Kenji, Nagaoka, Hirobumi, Kagamitani, Yuji, Simura, Rayko, Fukuda, Tsuguo

“…A relatively large sample of gallium nitride (GaN) was grown as a single crystal using the hydride vapor phase epitaxy (HVPE) process. The thermal diffusivity…”
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Studies on Leucocytosis and Leukopenia in Infectious Diseases: Report II The Hematopoiesis of the Bone Marrow in Leucopenia by Saito, Akira, Shimoyama, Kenji

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Carbon-doped InAl(Ga)As for high speed laser diode by Kurihara, K., Shimoyama, K.

“…Carbon doping in an InAlAs material system grown by LP-MOVPE has been studied. Reduction of oxygen in carbon-doped InAlAs has been achieved by investigating…”
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Dependence of deposition selectivity for MOVPE of AlGaAs using HCl gas on the orientation of the substrate and the orientation of the stripe of SiN masks by Fujii, Katsushi, Shimoyama, Kenji, Hosoi, Nobuyuki, Kiyomi, Kazumasa, Yamauchi, Atsunori, Gotoh, Hideki

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Dependence of deposition selectivity for MOVPE of AlGaAs using HCl gas on the orientation of the substrate and the orientation of the stripe of SiNx masks by Fujii, Katsushi, Shimoyama, Kenji, Hosoi, Nobuyuki, Kiyomi, Kazumasa, Yamauchi, Atsunori, Gotoh, Hideki

“…The conditions required to avoid MOVPE growth of AlGaAs on SiNx masks used to define windows has been investigated as a function of the orientation of the…”
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Observation of switching related to bistability between two cross-coupled lateral modes in twin-stripe lasers by Watanabe, M., Fujiki, H., Mukai, S., Ogura, M., Yajima, H., Shimoyama, K., Gotoh, H.

“…Switching between two cross-coupled lateral modes in gain-guided twin-stripe lasers has been experimentally observed with current injection of nominally…”
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High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P) by Kumai, S., Ishikawa, T., Okazaki, A., Utaka, K., Amanai, H., Kurihara, K., Shimoyama, K.

“…A semiconductor multi-mode interference photonic switch with partial index-modulation regions (MIPS-P) was fabricated, and we demonstrated high-speed switching…”
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