Search Results - "Shih, C.F."

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures by Shih, C.F., Chen, N.C., Tseng, C.Y.

“…The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray…”
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A finite element analysis of the motion and evolution of voids due to strain and electromigration induced surface diffusion by Xia, L., Bower, A.F., Suo, Z., Shih, C.F.

“…Microelectronic circuits often fail because cracks and voids cause open circuits in their interconnects. Many of the mechanisms of failure are believed to be…”
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Direct evidence of compositional pulling effect in Al Ga1−N epilayers by Lin, H.Y., Chen, Y.F., Lin, T.Y., Shih, C.F., Liu, K.S., Chen, N.C.

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Kink band propagation and broadening in ductile matrix fiber composites: Experiments and analysis by Moran, P.M., Shih, C.F.

“…Experimental observations of the kinking process in ductile matrix fiber composites confirm that kinking occurs in three distinct stages, incipient kinking,…”
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Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates by Wu, Kun-Ta, Chang, P.H., Lien, S.T., Chen, N.C., Chang, Ching-An, Shih, C.F., Lien, W.C., Wu, Y.H., Chen, Shang-Chia, Chang, Y.H., Liang, C.-T.

“…In order to grow high-quality GaN, we often choose sapphire as our substrates. However, silicon can be regarded as a new substrate due to its low cost and…”
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Kink band initiation and band broadening in clear wood under compressive loading by Poulsen, J.S., Moran, P.M., Shih, C.F., Byskov, E.

“…Compression kinking failure in spruce ( Picea Abies) is investigated experimentally using a high resolution video camera. Three distinct stages of kinking are…”
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Continuum modeling of a porous solid with pressure-sensitive dilatant matrix by Guo, T.F., Faleskog, J., Shih, C.F.

“…The pressure-sensitive plastic response of a material has been studied in terms of the intrinsic sensitivity of its yield stress to pressure and the presence…”
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Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics by Shih, C.F., Hung, K.T., Hsiao, C.Y., Shu, S.C., Li, W.M.

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The new FCL with HTS for the high‐speed communication system by Cheng, K.H., Chiou, H.K., Chiu, T.H., Cheng, C.H., Shih, C.F., Huang, T.W.

“…ABSTRACT We report a novel superconductivity fault current limiters (SFCLs) using high‐temperature superconducting (HTS) materials, which serve as the…”
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Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO 2 gate dielectrics by Shih, C.F., Hung, K.T., Hsiao, C.Y., Shu, S.C., Li, W.M.

“…This work elucidates the properties of Al/HfO 2/GaN metal-oxide-semiconductor capacitors using reactively sputtered HfO 2 as a gate dielectric. The influence…”
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Kink band formation and band broadening in fiber composites under compressive loading by Moran, P.M., Liu, X.H., Shih, C.F.

“…Various stages of kink band formation, propagation and band width broadening were recorded by a high resolution video camera. Based on these observations, the…”
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Direct evidence of compositional pulling effect in Al x Ga 1− x N epilayers by Lin, H.Y., Chen, Y.F., Lin, T.Y., Shih, C.F., Liu, K.S., Chen, N.C.

“…We report the investigation on the compositional-pulling effect of crystalline Al x Ga 1− x N/(0 0 0 1) sapphire epilayers by cross-sectional…”
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Three dimensional finite element analysis of the evolution of voids and thin films by strain and electromigration induced surface diffusion by Zhang, Y.W., Bower, A.F., Xia, L., Shih, C.F.

“…We describe a three-dimensional finite element method for predicting the behavior of a solid which changes its shape as a result of strain and electromigration…”
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Plasticity effects on fracture normal to interfaces with homogeneous and graded compositions by Kim, A.S., Suresh, S., Shih, C.F.

“…This paper deals with the problem of a crack in a multi-layered material with a homogeneous or a compositionally graded interface. The effects of plasticity…”
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High-quality and crack-free Al x Ga 1− x N ( x∼0.2) grown on sapphire by a two-step growth method by Shih, C.F., Keh, M.Y., Wang, Y.N., Chen, N.C., Chang, Chin-An, Chang, P.H., Liu, K.S.

“…We report a two-step growth of Al x Ga 1− x N ( x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free…”
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Ductile tearing in part-through cracks: experiments and cell-model predictions by Gao, X., Faleskog, J., Shih, C.F., Dodds, R.H.

“…This study describes an application of the computational cell model to predict ductile crack growth measured in experiments performed on surface-cracked, thick…”
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High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method by SHIH, C. F, KEH, M. Y, WANG, Y. N, CHEN, N. C, CHANG, Chin-An, CHANG, P. H, LIU, K. S

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Field emission properties of self-assembled InN nano-structures: Effect of Ga incorporation by Shih, C.F., Chen, N.C., Chang, P.H., Liu, K.S.

“…This work reports the field emission properties of InN and In-rich InGaN nano-structures. Pyramid InN with a tip-like feature exhibits field emission…”
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A self-consistent model for cleavage in the presence of plastic flow by Beltz, G.E., Rice, J.R., Shih, C.F., Xia, L.

“…A theory is proposed for cleavage in the presence of plastic flow, in circumstances which do not involve strong viscoplastic retardation of dislocation motion…”
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Energy release rate along a three-dimensional crack front in a thermally stressed body by SHIH, C. F, MORAN, B, NAKAMURA, T

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