Search Results - "Shigekawa, N."

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions by Liang, J., Nishida, S., Arai, M., Shigekawa, N.

“…The effects of thermal annealing process on the interface in p+-Si/n-SiC heterojunctions fabricated by using surface-activated bonding are investigated. It is…”
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Effects of interface state charges on the electrical properties of Si/SiC heterojunctions by Liang, J., Nishida, S., Hayashi, T., Arai, M., Shigekawa, N.

“…Electrical properties of p−-Si/n−-SiC, p-Si/n−-SiC, p+-Si/n−-SiC, and n+-Si/n−-SiC heterojunctions fabricated by using surface-activated bonding are…”
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Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate by Mitsuhara, M., Watanabe, N., Yokoyama, H., Iga, R., Shigekawa, N.

“…We have investigated the structural features of a strain-compensated InGaP/InGaP multiple-quantum-well (MQW) structure on GaAs (100) substrate with a band-gap…”
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Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy by Akazawa, M., Matsuyama, T., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N.

“…The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray…”
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Growth temperature dependent critical thickness for phase separation in thick (~1 μm) In Ga1−N (x=0.2–0.4) by Yamamoto, A., Md Hasan, Tanvir, Kodama, K., Shigekawa, N., Kuzuhara, M.

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Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped by Idutsu, Y., Liang, Jianbo, Nishimura, H., Kim, D.G., Shigekawa, N.

“…We deposit Mn-doped Zn-based nanoparticles (NPs) on Si solar cells using the drop casting and layer-by-layer methods and measure their current-voltage and…”
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Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells by Idutsu, Y., Tanaka, S., Liang, J., Narazaki, T., Nishimura, H., Kim, D.G., Shigekawa, N.

“…We deposit Cd-based nanoparticles on Si solar cells using the layer-by-layer method and measure their current-voltage and spectral response characteristics…”
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Thick (~1 μm) p-type InxGa1-xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C) by Yamamoto, A., Hasan, T. Md, Kodama, K., Shigekawa, N., Kuzuhara, M.

“…This paper reports the post‐growth annealing effects of low‐temperature grown Mg‐doped InGaN. By using MOVPE, 1 μm‐thick Mg‐doped InxGa1–xN (x ~ 0.36) films…”
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Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs by Kamitsuna, H., Matsuoka, Y., Yamahata, S., Shigekawa, N.

“…This paper presents an ultrahigh-speed InP/InGaAs double-heterostructure phototransistor (DHPT) with a record optical gain cutoff frequency of 82 GHz. This…”
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Surface Acoustic Waves in Reverse-Biased AlGaN/GaN Heterostructures by Shigekawa, N., Nishimura, K., Yokoyama, H., Hohkawa, K.

“…Properties of surface acoustic waves (SAWs) in reverse-biased AlGaN/GaN heterostructures on (0001) sapphire substrates were studied by examining the…”
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SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures by Shigekawa, N., Nishimura, K., Suemitsu, T., Yokoyama, H., Hohkawa, K.

“…We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the…”
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A CAN-type MIC-PD ROSA operating at 40-Gbit/s by Ohno, T, Muramoto, Y, Sano, K, Kodama, S, Shigekawa, N

“…We fabricated a 40-Gbit/s CAN-type ROSA using a maximized-induced-current photodiode (MIC-PD). 40-Gbit/s error-free operation was achieved for the first time…”
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Composite-field MIC-PDs for low-bias-voltage operation by Yoshimatsu, T, Muramoto, Y, Kodama, S, Furuta, T, Shigekawa, N, Yokoyama, H, Ishibashi, T

“…A novel maximized-induced-current-photodiode (MIC-PD) structure with a composite field depletion layer achieves high responsivity of 0.8 A/W and a wide 3-dB…”
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25-Gbit/s receiver optical subassembly using maximized-induced-current photodiode by Ohno, T, Yoshino, K, Muramoto, Y, Sano, K, Kodama, S, Shigekawa, N

“…We fabricated 25-Gbit/s receiver optical subassemblies (ROSAs) using a maximized-induced-current photodiode (MIC-PD). By employing a high-speed and…”
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Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates by Shigekawa, N., Enoki, T., Furuta, T., Ito, H.

“…Electroluminescence (EL) due to the electron-hole recombination in the channel of InAlAs/InGaAs HEMTs lattice-matched to InP substrates has been measured at…”
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Fabrication and Characterization of GaN/Diamond bonding interface by Kobayashi, A., Shimizu, Y., Ohno, Y., Kim, S. W., Koyama, K., Kasu, M., Nagai, Y., Shigekawa, N., Liang, J.

“…Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The…”
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Effects of Ar beam irradiation on Si-based Schottky contacts by Hisamoto, S., Liang, J., Shigekawa, N.

“…Effects of Ar beam irradiated during the surface-activated bonding process on n-Si and p-Si based Schottky barrier diodes (SBDs) were investigated by atomic…”
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Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions by Yamajo, S., Liang, J., Shigekawa, N.

“…Electrical properties of p + -GaAs/n-GaN and n + -GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The…”
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High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates by Shigekawa, N., Enoki, T., Furuta, T., Ito, H.

“…We report room-temperature measurements of the high-energy electroluminescence (EL) of InAlAs/InGaAs HEMT's lattice-matched to InP substrates. We found that…”
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Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions by Morita, S., Nishimura, T., Liang, J., Shigekawa, N.

“…n + -Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally…”
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