Search Results - "Shields, P.A."

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices by Le Boulbar, E.D., Lewins, C.J., Allsopp, D.W.E., Bowen, C.R., Shields, P.A.

“…High-aspect-ratio GaN-based nanostructures are of interest for advanced photonic crystal and core-shell devices. Nanostructures grown by a bottom-up approach…”
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Enhanced Light Extraction by Photonic Quasi-Crystals in GaN Blue LEDs by Shields, P.A., Charlton, M., Lee, T., Zoorob, M.E., Allsopp, D.W.E., Wang, W.N.

“…The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography,…”
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Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach by Armstrong, R., Coulon, P-M., Bozinakis, P., Martin, R.W., Shields, P.A.

“…•Combined top-down bottom-up approach as alternative to AlN selective area growth.•Purely AlN nanostructures suitable to house GaN quantum dots.•Uniform AlN…”
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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy by Walde, S., Hagedorn, S., Coulon, P.-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R.W., Shields, P.A., Kneissl, M., Weyers, M.

“…•Fabrication of nano-pillars on sapphire using Displacement Talbot Lithography.•AlN overgrowth shows smooth surface by changing offcut from 0.2° to…”
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Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes by Le Boulbar, E.D., Priesol, J., Nouf-Allehiani, M., Naresh-Kumar, G., Fox, S., Trager-Cowan, C., Šatka, A., Allsopp, D.W.E., Shields, P.A.

“…•Selective growth of GaN from nanodashes depends on their crystallographic alignment.•Nanodashes can be tiled to preserve the fast {11−22} laterally-growing…”
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Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy by Liu, C., Shields, P.A., Denchitcharoen, S., Stepanov, S., Gott, A., Wang, W.N.

“…A mixed pulsed and normal GaN epitaxial lateral overgrowth (ELO-GaN) by epitaxy metalorganic vapour phase epitaxy (MOVPE) is reported in this study. Monitoring…”
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Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems by Nicholas, R.J, Shields, P.A, Child, R.A, Li, L.J, Alphandéry, E, Mason, N.J, Bumby, C

“…The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence,…”
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Mid-infrared luminescence from coupled quantum dots and wells by Shields, P.A, Li, L.J, Nicholas, R.J

“…Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond…”
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Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes by Shields, P.A., Lis, S., Lee, T., Allsopp, D.W.E., Charlton, M.D.B., Zoorob, M.E., Wang, W.N.

“…Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling…”
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Magneto-photoluminescence of AlGaN/GaN quantum wells by Shields, P.A., Nicholas, R.J., Grandjean, N., Massies, J.

“…The magneto-luminescence of GaN/AlGaN quantum wells in fields up to 52 T shows a field dependence that is strongly dependent on the well width. Strong…”
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Magneto-Reflectivity of Gallium Nitride Epilayers by Shields, P.A., Nicholas, R.J., Beaumont, B., Gibart, P.

“…We have used interband magneto‐reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have…”
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InGaAs/GaAs quantum wells and quantum dots on (111)B orientation by Tyan, S.L., Lin, Y.G., Tsai, F.Y., Lee, C.P., Shields, P.A., Nicholas, R.J.

“…We report a magneto optical characterization of InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures grown on (111)B GaAs substrates. The…”
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An investigation of GaSb/GaAs thermophotovoltaic cells by Fan, Q., Lim, A.L.C., Conibeer, G.J., Bumby, C.W., Shields, P.A., Nicholas, R.J., Haywood, S.K.

“…The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature…”
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