Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics

We demonstrate herein the fabrication and operation of p-type GaN Schottky barrier diodes (SBDs) with nearly ideal rectifying characteristics using vertical bottom tunneling junction contacts. The interface between Ni and p-type GaN provides a large Schottky barrier height of 2.29 eV, which is promi...

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Bibliographic Details
Published in:	Applied physics letters Vol. 118; no. 2
Main Authors:	Ueno, Kohei, Shibahara, Keita, Kobayashi, Atsushi, Fujioka, Hiroshi
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 11-01-2021
Subjects:	Applied physics Gallium nitrides High temperature environments Schottky diodes Thermionic emission
Online Access:	Get full text
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Summary:	We demonstrate herein the fabrication and operation of p-type GaN Schottky barrier diodes (SBDs) with nearly ideal rectifying characteristics using vertical bottom tunneling junction contacts. The interface between Ni and p-type GaN provides a large Schottky barrier height of 2.29 eV, which is promising for high-temperature operations. The vertical p-type GaN SBDs show nearly ideal rectifying characteristics with an ideality factor close to unity and a rectifying ratio as high as 106, even at 600 K. This distinguished performance indicates the superiority of p-type GaN SBDs for electron devices operated under high-temperature environments.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/5.0036093