Sub-5 nm Al-doped HfO2 ferroelectric thin films compatible with 3D NAND process
The HfO2-based ferroelectric thin films have provided new opportunity for ferroelectric field-effect transistors (FeFETs) to be the candidate for the next-generation non-volatile memory, because of their compatibility with complementary metal-oxide-semiconductor technology. Benefiting from their sim...
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| Published in: | Journal of alloys and compounds Vol. 1007; p. 176327 |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
05-12-2024
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | The HfO2-based ferroelectric thin films have provided new opportunity for ferroelectric field-effect transistors (FeFETs) to be the candidate for the next-generation non-volatile memory, because of their compatibility with complementary metal-oxide-semiconductor technology. Benefiting from their similar but simpler structure compared to commercial flash memory, FeFETs can be integrated into three dimensional (3D) NAND architectures, which is named as 3D Fe-NAND, promising for super large storage applications. However, the ultra-thin HfO2-based ferroelectric thin film with tolerance for 850 ℃ thermal treatment has not been realized, which is the prerequisite for the high-density and low-power-consumption 3D Fe-NAND. In this work, we systematically investigated the impact both of thermodynamic and kinetical process on the ferroelectricity and reliability of the Al-doped HfO2 thin films. By carefully designing the dopant concentration and annealing technique, a 4.5-nm-thick HfAlOx film annealed at 850 °C with good ferroelectricity with 2Pr of ∼20 μC/cm² and breakdown field of ∼8.6 MV/cm is achieved. Furthermore, device simulation demonstrates the enhanced memory window at low operation voltage when integrating thinner HfAlOx ferroelectric films into FeFETs, suggesting the competitiveness of ultra-thin HfAlOx ferroelectric films in low-power-consumption operation. This work provides the strategy to design high-performance, ultra-thin HfO2-based ferroelectric thin films compatible with 3D Fe-NAND architecture.
•The thermodynamical and kinetical strategies are developed to control ferroelectric phase in HfAlOx thin films.•2Pr ~ 20 µC/cm2, high endurance and EBD of ~ 8.6 MV/cm are realized in sub-5 nm HfAlOx films compatible with 3D Fe-NAND.•The enhanced memory window at a lower operation voltage is demonstrated in FeFET devices with thinner HfAlOx films. |
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| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2024.176327 |