Search Results - "Shi, L.‐P."
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1
Breaking the Speed Limits of Phase-Change Memory
Published in Science (American Association for the Advancement of Science) (22-06-2012)“…Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization…”
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Journal Article -
2
Effects of a nutrient‐dense formula compared with a post‐discharge formula on post‐discharge growth of preterm very low birth weight infants with extrauterine growth retardation: a multicentre randomised study in China
Published in Journal of human nutrition and dietetics (01-08-2020)“…Background Post‐discharge optimal growth and nutritional intake have beneficial effects for neurodevelopment in preterm very low birth weight infants (VLBWIs)…”
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3
Paleogene sedimentation, volcanism, and deformation in eastern Tibet: Evidence from structures, geochemistry, and zircon U–Pb dating in the Jianchuan Basin, SW China
Published in Gondwana research (01-09-2014)“…The Cenozoic tectonics of southeastern Tibet feature several large-scale strike-slip ductile shear zones along block boundaries and complex rotation and…”
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4
Fabrication of nanostructures with laser interference lithography
Published in Journal of alloys and compounds (31-01-2008)“…Maskless nanostructure fabrication by laser interference lithography (LIL) using Lloyd's mirror interferometer is investigated. With the usage of 100 nm…”
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Journal Article Conference Proceeding -
5
Serum Fractalkine and Interferon-Gamma Inducible Protein-10 Concentrations Are Early Detection Markers for Acute Renal Allograft Rejection
Published in Transplantation proceedings (01-06-2014)“…Abstract Objective The aims of this study were to determine if characterization of serum concentrations of interferon-gamma inducible protein-10 (IP-10),…”
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6
Investigation of the immunosuppressive activity of artemether on T‐cell activation and proliferation
Published in British journal of pharmacology (01-03-2007)“…Background and purpose: Artemisinin and its derivatives exhibit potent immunosuppressive activity. The purpose of the current study was to examine the…”
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7
Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material
Published in Journal of electronic materials (01-10-2016)“…Fe doped phase change material Ge x Sb y Te z has shown experimentally the ability to alter its magnetic properties by phase change. This engineered spin…”
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8
The new water‐soluble artemisinin derivative SM905 ameliorates collagen‐induced arthritis by suppression of inflammatory and Th17 responses
Published in British journal of pharmacology (01-03-2008)“…Background and purpose: Our previous study showed that SM905, a novel artemisinin derivative, exhibited potent immunosuppressive activity. In this study, we…”
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9
Time evolution of charge conductivity of graphene bilayers
Published in Europhysics letters (01-09-2009)“…We adopt the dynamical method developed to solve the charge transport properties in monolayer graphene system (Lewkowicz M. and Rosenstein B., Phys. Rev…”
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10
HSPICE macromodel of PCRAM for binary and multilevel storage
Published in IEEE transactions on electron devices (01-01-2006)“…A general macromodel of the phase change random access memory (PCRAM) elements for use in HSPICE-based computer simulator is proposed in this paper by…”
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11
Direct femtosecond laser nanopatterning of glass substrate by particle-assisted near-field enhancement
Published in Applied physics letters (09-01-2006)“…Direct femtosecond laser nanopatterning of glass substrate by particle-assisted near-field enhancement was demonstrated in this letter. The nanostructure was…”
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12
Fast phase transitions induced by picosecond electrical pulses on phase change memory cells
Published in Applied physics letters (28-07-2008)“…The reversible and fast phase transitions induced by picosecond electrical pulses are observed in the nanostructured GeSbTe materials, which provide…”
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13
Parallel nanostructuring of GeSbTe film with particle mask
Published in Applied physics. A, Materials science & processing (01-09-2004)“…Parallel nanostructuring of a GeSbTe film may significantly improve the recording performance in data storage. In this paper, a method that permits direct and…”
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Conference Proceeding Journal Article -
14
Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering
Published in Applied physics letters (11-02-2013)“…Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution…”
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15
Identifying and Engineering the Electronic Properties of the Resistive Switching Interface
Published in Journal of electronic materials (01-02-2016)“…The resistive switching interface is promising for building random access memory devices with electroforming-free characteristics, rectification functionality…”
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16
Patterning of phase change films with microlens arrays
Published in Journal of alloys and compounds (31-01-2008)“…Nanometer-sized features were fabricated on Ge 1Sb 2Te 4 phase change films uniformly by irradiation with the fundamental and second harmonic components of a…”
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Journal Article Conference Proceeding -
17
Study on the proliferation of human gastric cancer cell AGS by activation of EGFR in H2O2
Published in European review for medical and pharmacological sciences (01-03-2017)“…This study is to investigate the effect of low concentration hydrogen peroxide (H2O2) on the proliferation of gastric cancer AGS cell line in vitro and the…”
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18
Effect of metals and annealing on specific contact resistivity of GeTe/metal contacts
Published in Applied physics letters (02-07-2012)“…The circular transfer length method was employed to extract the specific contact resistivity, ρc of GeTe (amorphous and crystalline state) with metals (Ni, W,…”
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19
Crystalline amorphous semiconductor superlattice
Published in Physical review letters (04-04-2008)“…A new class of superlattice, crystalline amorphous superlattice (CASL), by alternatively depositing two semiconductor materials, is proposed. CASL displays…”
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20
Phase change behaviors of Sn-doped Ge-Sb-Te material
Published in Applied physics letters (26-02-2007)“…Sn-doped Ge-Sb-Te material was prepared by laser synthesis. It has a rocksalt crystal structure for Sn doping content less than 30 at. % . A phase change…”
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