Search Results - "Shi, Binqiang"

Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs by Li, James Chingwei, Chow, David H., Asbeck, Peter M., Sokolich, Marko, Royter, Yakov, Hussain, Tahir, Chen, Mary Y., Fields, Charles H., Rajavel, Rajesh D., Bui, Steven S., Shi, Binqiang, Hitko, Donald A.

“…Recent attempts to achieve 400 GHz or higher f T and f MAX with InP heterojunction bipolar transistors (HBTs) have resulted in aggressive scaling into the deep…”
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A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology by Sokolich, M., Fields, C.H., Thomas, S., Binqiang Shi, Boegeman, Y.K., Martinez, R., Kramer, A.R., Madhav, M.

“…We report a 72.8-GHz fully static frequency divider in AlInAs/InGaAs HBT IC technology. The CML divider operates with a 350-mV logic swing at less than 0-dBm…”
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A submicrometer 252 GHz fT and 283 GHz fMAX inp DHBT with reduced CBC using selectively implanted buried subcollector (SIBS) by LI, James C, CHEN, Mary, HITKO, Donald A, FIELDS, Charles H, BINQIANG SHI, RAJAVEL, Rajesh, ASBECK, Peter M, SOKOLICH, Marko SR

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InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers by Sokolich, M., Chen, M.Y., Rajavel, R.D., Chow, D.H., Royter, Y., Thomas, S., Fields, C.H., Binqiang Shi, Bui, S.S., James Chingwei Li, Hitko, D.A., Elliott, K.R.

“…We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process, we have demonstrated…”
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Chromatin accessibility memory of donor cells disrupts bovine somatic cell nuclear transfer blastocysts development by Huang, Yuemeng, Zhang, Jingcheng, Li, Xinmei, Wu, Zhipei, Xie, Guoxiang, Wang, Yong, Liu, Zhengqing, Jiao, Mei, Zhang, Hexu, Shi, Binqiang, Wang, Yu, Zhang, Yong

“…The post‐transfer developmental capacity of bovine somatic cell nuclear transfer (SCNT) blastocysts is reduced, implying that abnormalities in gene expression…”
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C-X-C motif chemokine ligand 12 improves the developmental potential of bovine oocytes by activating SH2 domain-containing tyrosine phosphatase 2 during maturation by Zhang, Min, Zhang, Jingcheng, Wang, Debao, Liu, Zhengqing, Xing, Kangning, Wang, Yongsheng, Jiao, Mei, Wang, Yong, Shi, Binqiang, Zhang, Hexu, Zhang, Yong

“…In vitro maturation of mammalian oocytes is an important means in assisted reproductive technology. Most bovine immature oocytes complete nuclear maturation,…”
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A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) by Li, J.C., Chen, M., Hitko, D.A., Fields, C.H., Binqiang Shi, Rajavel, R., Asbeck, P.M., Sokolich, M.

“…The selectively implanted buried subcollector (SIBS) is a method to decouple the intrinsic and extrinsic C/sub BC/ of InP-based double-heterojunction bipolar…”
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200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers by Li, James C., Lao, Zhihao, Chen, Mary Y., Rajavel, Rajesh D., Thomas, Stephen, Bui, Steven S., Shi, Binqiang, Guinn, Keith V., Duvall, Janna R., Hitko, Donald A., Chow, David H., Sokolich, Marko

“…Traditional compound semiconductor HBT technologies do not allow for the independent design of the intrinsic and extrinsic collector regions commonly found in…”
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InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion by Broekaert, T.P.E., Jensen, J.F., Yap, D., Persechini, D.L., Bourgholtzer, S., Fields, C.H., Brown-Boegeman, Y.K., Binqiang Shi, Walden, R.H.

“…A monolithically integrated optical receiver and a 4-bit flash analog-to-digital converter, all in InP HBT technology, have been implemented. The optical…”
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In situ etching using a novel precursor of tertiarybutylchloride (TBCl) by Kondow, Masahiko, Shi, Binqiang, Tu, Charles W

“…We investigated systematically chemical beam etching of GaAs, GaInP and AlInP using a novel precursor, tertiarybutylchloride (TBCl). Because TBCl is not…”
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Chemical Beam Etching of GaAs Using a Novel Precursor of Tertiarybutylchloride (TBCl) by Kondow, Masahiko, Shi, Binqiang, Tu, Charles W.

“…We examined systematically in situ etching with a novel precursor, tertiarybutylchloride (TBCl) in a chemical beam epitaxy system. Reflection high-energy…”
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CXCL12 improves the developmental potential of bovine oocytes by activating SHP2 during maturation by Zhang, Min, Zhang, Jingcheng, Wang, Debao, Liu, Zhengqing, Xing, Kangning, Wang, Yongsheng, Jiao, Mei, Wang, Yong, Shi, Binqiang, Zhang, Hexu, Zhang, Yong

“…In vitro maturation (IVM) of mammalian oocytes is an important means in assisted reproductive technology. Most bovine immature oocytes complete nuclear…”
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A submicrometer 252 GHz fT and 283 GHz fmax InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) by Li, J.C., Chen, M., Hitko, D.A., Fields, C.H., Binqiang Shi, Rajavel, R., Asbeck, P.M., Sokolich, M.

“…The selectively implanted buried subcollector (SIBS) is a method to decouple the intrinsic and extrinsic C/sub BC/ of InP-based double-heterojunction bipolar…”
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Experimental and numerical studies of chemical beam epitaxy and Ar(+)-laser induced effects by Shi, Binqiang

“…Deposition of thin epitaxial films is required for the fabrication of many microelectronic devices. Often, these layers must be patterned by photolithographic…”
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A submicrometer 252 GHz f sub(T) and 283 GHz f sub(MAX) InP DHBT with reduced C sub(BC) using selectively implanted buried subcollector (SIBS) by Li, J C, Chen, M, Hitko, DA, Fields, CH, Shi, Binqiang, Rajavel, R, Asbeck, P M, Sokolich, M

“…The selectively implanted buried subcollector (SIBS) is a method to decouple the intrinsic and extrinsic C sub(BC) of InP-based double-heterojunction bipolar…”
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200GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers by Li, James C., Lao, Zhihao, Chen, Mary Y., Rajavel, Rajesh D., Thomas, Stephen, Bui, Steven S., Shi, Binqiang, Guinn, Keith V., Duvall, Janna R., Hitko, Donald A., Chow, David H., Sokolich, Marko

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Experimental and numerical studies of chemical beam epitaxy and Ar(+)-laser induced effects by Shi, Binqiang

“…Deposition of thin epitaxial films is required for the fabrication of many microelectronic devices. Often, these layers must be patterned by photolithographic…”
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Effects of device design on InP-based HBT thermal resistance by Thomas, S., Foschaar, J.A., Fields, C.H., Madhav, M.M., Sokolich, M., Rajavel, R.D., Binqiang Shi

“…The thermal resistance of InP-based single and double heterojunction bipolar transistors has been measured. The double heterojunction bipolar transistor (DHBT)…”
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< e4 > E < /e4 > ffects of device design on InP-based HBT thermal resistance by Thomas, S, Foschaar, J A, Fields, C H, Madhav, M M, Sokolich, M, Rajavel, R D, Shi, Binqiang

“…The thermal resistance of InP-based single and double heterojunction bipolar transistors has been measured. The double heterojunction bipolar transistor (DHBT)…”
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