Search Results - "Sherban, D.A."

Silicon solar cells based on pSi/nSi3N4 nanolayers by Zakhvalinskii, V.S., Piliuk, E.A., Goncharov, I. Yu, Simashkevich, A.V., Sherban, D.A., Bruc, L.I., Curmei, N.N., Rusu, M.I., Rodrigez, G.V.

“…Thin films of Si3N4 were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized Si3N4 was used as a solid-state target…”
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Thin films of (AgxCu1−x)2ZnSn(S,Se)4 (x = 0.05–0.20) prepared by spray pyrolysis by Dermenji, L., Guc, M., Gurieva, G., Dittrich, Th, Rappich, J., Curmei, N., Bruc, L., Sherban, D.A., Simashkevich, A.V., Schorr, S., Arushanov, E.

“…The recent investigation of kesterite type quaternary compounds showed that one of the main detrimental problems, which limits the efficiency of the solar…”
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Silicon solar cells based on pSi/nSi 3 N 4 nanolayers by Zakhvalinskii, V.S., Piliuk, E.A., Goncharov, I. Yu, Simashkevich, A.V., Sherban, D.A., Bruc, L.I., Curmei, N.N., Rusu, M.I., Rodrigez, G.V.

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(AgxCu1-x)2ZnSn(S,Se)4 Thin Films Prepared By Spray Pyrolysis: The Influence of the Ag Concentration by Dermenji, L., Bruc, L., Gurieva, G., Guc, M., Curmei, N., Sherban, D.A., Simashkevich, A.V., Schorr, S., Arushanov, E.

“…Thin films of (Ag x Cu 1-x ) 2 ZnSn(S,Se) 4 (ACZTSSe), with x = 0.05 - 0.20, were deposited using the spray pyrolysis method, with subsequent annealing in S +…”
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Illumination controlled S-shaped current-voltage characteristics of p+-nSi-ITO structures by Gagara, L.S., Negru, E.A., Pleshka, V.N., Simashkevich, A.V., Sherban, D.A.

“…Silicon p+n-insulator-ITO structures have been obtained by the deposition of a thin layer of In2O3:SnO2((ITO) on the n-region of a silicon p-n junction by a…”
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