Search Results - "Shengurov, Vladimir"

High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates by Buzynin, Yury N., Shengurov, Vladimir G., Denisov, Sergei A., Yunin, Pavel A., Chalkov, Vadim Yu, Drozdov, Michael N., Korolyov, Sergei A., Nezhdanov, Alexei V.

“…The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their…”
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GaAs/Ge/Si epitaxial substrates: Development and characteristics by Buzynin, Yury, Shengurov, Vladimir, Zvonkov, Boris, Buzynin, Alexander, Denisov, Sergey, Baidus, Nikolay, Drozdov, Michail, Pavlov, Dmitry, Yunin, Pavel

“…We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells,…”
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Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates by Shengurov, Vladimir, Denisov, Sergei, Chalkov, Vadim, Trushin, Vladimir, Zaitsev, Andrei, Prokhorov, Dmitry, Filatov, Dmitry, Zdoroveishchev, Anton, Ved, Mikhail, Kudrin, Alexey, Dorokhin, Mikhail, Buzynin, Yuri

“…The conditions for obtaining high-quality heavily doped epitaxial Ge:P/Si(001) epitaxial layers by hot wire chemical vapor deposition were determined. The…”
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