Search Results - "Sheng-Min Yu"

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  1. 1

    Selection of anti-solvent and optimization of dropping volume for the preparation of large area sub-module perovskite solar cells by Lee, Kun-Mu, Lin, Chuan-Jung, Liou, Bo-Yi, Yu, Sheng-Min, Hsu, Chien-Chung, Suryanarayanan, Vembu, Wu, Ming-Chung

    Published in Solar energy materials and solar cells (01-12-2017)
    “…Anti-solvents play a critical role on the preparation of perovskite active layers for photovoltaic applications. This work explores the treatment of various…”
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    Journal Article
  2. 2

    Characterization of TiO2-Based MISIM Ultraviolet Photodetectors by Ultrasonic Spray Pyrolysis by Han-Yin Liu, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

    Published in IEEE photonics technology letters (15-03-2016)
    “…In this letter, non-vacuum ultrasonic spray pyrolysis deposition was used to grow Al 2 O 3 /TiO 2 thin film as the…”
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    Journal Article
  3. 3

    Oxidized Nickel to Prepare an Inorganic Hole Transport Layer for High-Efficiency and Stability of CH3NH3PbI3 Perovskite Solar Cells by Hsu, Chien-Chung, Yu, Sheng-Min, Lee, Kun-Mu, Lin, Chuan-Jung, Liou, Bo-Yi, Chen, Fu-Rong

    Published in Energies (Basel) (01-01-2022)
    “…In this study, we report a perovskite solar cell (PSC) can be benefited from the high quality of inorganic nickel oxide (NiOx) as a hole transport layer (HTL)…”
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    Journal Article
  4. 4

    Investigation of TiO2-Based MISIM Ultraviolet Photodetectors With Different Insulator Layer Thickness by Ultrasonic Spray Pyrolysis Deposition by Han-Yin Liu, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

    Published in IEEE transactions on electron devices (01-06-2016)
    “…This work uses ultrasonic spray pyrolysis deposition to grow titanium dioxide and aluminum oxide (Al 2 O 3 ) films, respectively, as an active layer and an…”
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    Journal Article
  5. 5

    TiO2-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis Technique by Liu, Han-Yin, Hong, Shen-Hui, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min

    Published in IEEE transactions on electron devices (01-01-2016)
    “…This paper uses nonvacuum ultrasonic spray pyrolysis deposition method to grow TiO 2 for ultraviolet (UV) detection. The analyses of the materials like X-ray…”
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    Journal Article
  6. 6

    Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication by Han-Yin Liu, Chih-Wei Lin, Wei-Chou Hsu, Ching-Sung Lee, Meng-Hsueh Chiang, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

    Published in IEEE electron device letters (01-01-2017)
    “…This letter demonstrates an integration process of in situ Cl - doped Al 2 O 3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs…”
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    Journal Article
  7. 7

    Investigations of TiO2-AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition by Lee, Ching-Sung, Hsu, Wei-Chou, Chou, Bo-Yi, Liu, Han-Yin, Yang, Cheng-Long, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min, Wu, Chang-Luen

    Published in IEEE transactions on electron devices (01-05-2015)
    “…Comparative studies for TiO 2 -passivated Al 0.25 Ga 0.75 N/GaN heterostructure FETs (HFETs) and TiO 2 -dielectric MOS-HFETs using nonvacuum ultrasonic spray…”
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    Journal Article
  8. 8

    In Situ Growth of Al2O3 as a Passivation and Antireflection Layer on TiO2-Based MSM Photodetectors by Han-Yin Liu, Guan-Jyun Liu, Ruei-Chin Huang, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

    Published in IEEE sensors journal (15-08-2017)
    “…The in situ growth of Al 2 O 3 on TiO 2 by ultrasonic spray pyrolysis deposition is presented in this paper. Here, Al 2 O 3 is used as the passivation and the…”
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    Journal Article
  9. 9

    Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane by Han-Yin Liu, Wei-Chou Hsu, Wei-Fan Chen, Chih-Wei Lin, Yi-Ying Li, Ching-Sung Lee, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

    Published in IEEE sensors journal (15-05-2016)
    “…This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al 2 O 3 ) to…”
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    Journal Article
  10. 10

    TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition by Bo-Yi Chou, Ching-Sung Lee, Cheng-Long Yang, Wei-Chou Hsu, Han-Yin Liu, Meng-Hsueh Chiang, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

    Published in IEEE electron device letters (01-11-2014)
    “…High-k TiO 2 -dielectric Al 0.25 Ga 0.75 N/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) grown on Si substrates by using…”
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    Journal Article
  11. 11

    Al2O3 Passivation Layer for InGaN/GaN LED Deposited by Ultrasonic Spray Pyrolysis by Liu, Han-Yin, Hsu, Wei-Chou, Chou, Bo-Yi, Wang, Yi-Hsuan, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min

    Published in IEEE photonics technology letters (15-06-2014)
    “…This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al 2 O 3 as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al 2…”
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    Journal Article
  12. 12

    Growing Al2O3 by Ultrasonic Spray Pyrolysis for Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors by Liu, Han-Yin, Hsu, Wei-Chou, Chou, Bo-Yi, Wang, Yi-Hsuan, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min, Chiang, Meng-Hsueh

    Published in IEEE transactions on electron devices (01-12-2014)
    “…This paper proposed Al 2 O 3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al 2 O 3 /AlGaN/GaN metal-insulator-semiconductor…”
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    Journal Article
  13. 13

    Enhanced efficiency and stability of quasi-2D/3D perovskite solar cells by thermal assisted blade coating method by Lee, Kun-Mu, Chan, Shun-Hsiang, Hou, Min-Yao, Chu, Wei-Cheng, Chen, Shih-Hsuan, Yu, Sheng-Min, Wu, Ming-Chung

    “…The quasi-2D/3D perovskite solar cells are fabricated by thermal assisted blade coating method, and the PCE of the champion device is 20.26%. [Display omitted]…”
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    Journal Article
  14. 14

    Solid-state reaction process for high-quality organometallic halide perovskite thin film by Hsu, Chien-Chung, Yu, Sheng-Min, Lee, Kun-Mu, Lin, Chuan-Jung, Cheng, Hao-Chien, Chen, Fu-Rong

    Published in Solar energy materials and solar cells (01-08-2021)
    “…Recently, a hybrid perovskite material, ABX3 (A= Cs, CH3NH3, NH2CHNH2; B= Pb, Sn; X= Cl, Br, I), has received much attention as an active layer in…”
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    Journal Article
  15. 15

    A hybrid CMOS-imager with perovskites as photoactive layer by Pei-Wen Yen, Yan-Rung Lin, Sheng-Min Yu, Shiu-Cheng Lou, Kai-Ping Chuang, Bor-Nian Chuang, Yen-Chih Chiou, Chih-Cheng Hsieh

    Published in 2016 IEEE SENSORS (01-10-2016)
    “…A new complementary metal-oxide-semiconductor (CMOS) compatible hybrid CMOS image sensor (CIS) are proposed to enhance pixel fill factor, without increasing…”
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    Conference Proceeding
  16. 16

    Effect of anti-solvent mixture on the performance of perovskite solar cells and suppression hysteresis behavior by Lee, Kun-Mu, Lin, Chuan-Jung, Liou, Bo-Yi, Yu, Sheng-Min, Hsu, Chien-Chung, Suryanarayanan, Vembu

    Published in Organic electronics (01-02-2019)
    “…Mixture of anti-solvents plays a decisive factor on the preparation of active layers for perovskite photovoltaic applications. This work explores the…”
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    Journal Article
  17. 17

    A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector by Liu, Han-Yin, Lin, Wei-Hsun, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min

    “…This work uses ultrasonic spray pyrolysis deposition to grow the TiO2 film on a Si substrate. The TiO2 film was annealed at 800°C for 2h to form rutile phase…”
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    Journal Article
  18. 18

    Al2O3-Passivated AlGaN/GaN HEMTs by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition Technique by Chou, Bo-Yi, Liu, Han-Yin, Hsu, Wei-Chou, Lee, Ching-Sung, Wu, Yu-Sheng, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min

    Published in IEEE electron device letters (01-09-2014)
    “…This letter reports, for the first time, the Al 2 O 3 -passivated AlGaN/GaN high electron mobility transistors (HEMTs) by using the nonvacuum ultrasonic spray…”
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    Journal Article
  19. 19
  20. 20

    Orientation selected epitaxy for grain enlargement of AIC poly-Si seed layers by Sung-Yen Wei, Sheng-Min Yu, Hung-Hsi Lin, Wei Chen, Chun-Jen Chen, Tzer-Shen Lin, Chuen-Horng Tsai, Fu-Rong Chen

    “…A novel method for producing a highly-(100) orientated, large grain of poly-Si seed layer on glass by multi-round aluminum-induced crystallization (AIC) is…”
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    Conference Proceeding