Search Results - "Sheng-Min Yu"
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Selection of anti-solvent and optimization of dropping volume for the preparation of large area sub-module perovskite solar cells
Published in Solar energy materials and solar cells (01-12-2017)“…Anti-solvents play a critical role on the preparation of perovskite active layers for photovoltaic applications. This work explores the treatment of various…”
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2
Characterization of TiO2-Based MISIM Ultraviolet Photodetectors by Ultrasonic Spray Pyrolysis
Published in IEEE photonics technology letters (15-03-2016)“…In this letter, non-vacuum ultrasonic spray pyrolysis deposition was used to grow Al 2 O 3 /TiO 2 thin film as the…”
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3
Oxidized Nickel to Prepare an Inorganic Hole Transport Layer for High-Efficiency and Stability of CH3NH3PbI3 Perovskite Solar Cells
Published in Energies (Basel) (01-01-2022)“…In this study, we report a perovskite solar cell (PSC) can be benefited from the high quality of inorganic nickel oxide (NiOx) as a hole transport layer (HTL)…”
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4
Investigation of TiO2-Based MISIM Ultraviolet Photodetectors With Different Insulator Layer Thickness by Ultrasonic Spray Pyrolysis Deposition
Published in IEEE transactions on electron devices (01-06-2016)“…This work uses ultrasonic spray pyrolysis deposition to grow titanium dioxide and aluminum oxide (Al 2 O 3 ) films, respectively, as an active layer and an…”
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5
TiO2-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis Technique
Published in IEEE transactions on electron devices (01-01-2016)“…This paper uses nonvacuum ultrasonic spray pyrolysis deposition method to grow TiO 2 for ultraviolet (UV) detection. The analyses of the materials like X-ray…”
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Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication
Published in IEEE electron device letters (01-01-2017)“…This letter demonstrates an integration process of in situ Cl - doped Al 2 O 3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs…”
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7
Investigations of TiO2-AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition
Published in IEEE transactions on electron devices (01-05-2015)“…Comparative studies for TiO 2 -passivated Al 0.25 Ga 0.75 N/GaN heterostructure FETs (HFETs) and TiO 2 -dielectric MOS-HFETs using nonvacuum ultrasonic spray…”
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8
In Situ Growth of Al2O3 as a Passivation and Antireflection Layer on TiO2-Based MSM Photodetectors
Published in IEEE sensors journal (15-08-2017)“…The in situ growth of Al 2 O 3 on TiO 2 by ultrasonic spray pyrolysis deposition is presented in this paper. Here, Al 2 O 3 is used as the passivation and the…”
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9
Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane
Published in IEEE sensors journal (15-05-2016)“…This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al 2 O 3 ) to…”
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10
TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition
Published in IEEE electron device letters (01-11-2014)“…High-k TiO 2 -dielectric Al 0.25 Ga 0.75 N/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) grown on Si substrates by using…”
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11
Al2O3 Passivation Layer for InGaN/GaN LED Deposited by Ultrasonic Spray Pyrolysis
Published in IEEE photonics technology letters (15-06-2014)“…This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al 2 O 3 as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al 2…”
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12
Growing Al2O3 by Ultrasonic Spray Pyrolysis for Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors
Published in IEEE transactions on electron devices (01-12-2014)“…This paper proposed Al 2 O 3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al 2 O 3 /AlGaN/GaN metal-insulator-semiconductor…”
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13
Enhanced efficiency and stability of quasi-2D/3D perovskite solar cells by thermal assisted blade coating method
Published in Chemical engineering journal (Lausanne, Switzerland : 1996) (01-02-2021)“…The quasi-2D/3D perovskite solar cells are fabricated by thermal assisted blade coating method, and the PCE of the champion device is 20.26%. [Display omitted]…”
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Journal Article -
14
Solid-state reaction process for high-quality organometallic halide perovskite thin film
Published in Solar energy materials and solar cells (01-08-2021)“…Recently, a hybrid perovskite material, ABX3 (A= Cs, CH3NH3, NH2CHNH2; B= Pb, Sn; X= Cl, Br, I), has received much attention as an active layer in…”
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15
A hybrid CMOS-imager with perovskites as photoactive layer
Published in 2016 IEEE SENSORS (01-10-2016)“…A new complementary metal-oxide-semiconductor (CMOS) compatible hybrid CMOS image sensor (CIS) are proposed to enhance pixel fill factor, without increasing…”
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Conference Proceeding -
16
Effect of anti-solvent mixture on the performance of perovskite solar cells and suppression hysteresis behavior
Published in Organic electronics (01-02-2019)“…Mixture of anti-solvents plays a decisive factor on the preparation of active layers for perovskite photovoltaic applications. This work explores the…”
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17
A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector
Published in Materials science in semiconductor processing (01-01-2017)“…This work uses ultrasonic spray pyrolysis deposition to grow the TiO2 film on a Si substrate. The TiO2 film was annealed at 800°C for 2h to form rutile phase…”
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18
Al2O3-Passivated AlGaN/GaN HEMTs by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition Technique
Published in IEEE electron device letters (01-09-2014)“…This letter reports, for the first time, the Al 2 O 3 -passivated AlGaN/GaN high electron mobility transistors (HEMTs) by using the nonvacuum ultrasonic spray…”
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Journal Article -
19
Investigations of TiO 2 –AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition
Published in IEEE transactions on electron devices (01-05-2015)Get full text
Journal Article -
20
Orientation selected epitaxy for grain enlargement of AIC poly-Si seed layers
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…A novel method for producing a highly-(100) orientated, large grain of poly-Si seed layer on glass by multi-round aluminum-induced crystallization (AIC) is…”
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Conference Proceeding