Search Results - "Shelton, B.S."

Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Shelton, B.S., Lambert, D.J.H., Jian Jang Huang, Wong, M.M., Chowdhury, U., Ting Gang Zhu, Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.

“…The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor…”
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Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors by Huang, J.J., Hattendorf, M., Feng, M., Lambert, D.J.H., Shelton, B.S., Wong, M.M., Chowdhury, U., Zhu, T.G., Kwon, H.K., Dupuis, R.D.

“…We have demonstrated state-of-the-art performance of AlGaN/GaN heterojunction bipolar transistors (HBTs) with a common emitter (CE) current gain of 31 at 175 K…”
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Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers by Shelton, B.S., Ting Gang Zhu, Lambert, D.J.H., Dupuis, R.D.

“…The use of GaN for the fabrication of Schottky and p-i-n rectifiers presents an opportunity to take advantage of the high-voltage and high-power handling…”
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The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Lambert, D.J.H, Huang, J.J, Shelton, B.S, Wong, M.M, Chowdhury, U, Zhu, T.G, Kwon, H.K, Liliental-Weber, Z, Benarama, M, Feng, M, Dupuis, R.D

“…The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described…”
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Optical properties of undoped and modulation-doped Al xGa 1− xN/GaN heterostructures grown by metalorganic chemical vapor deposition by Kwon, Ho Ki, Eiting, C.J, Lambert, D.J.H, Shelton, B.S, Wong, M.M, Zhu, T.G, Dupuis, R.D

“…The radiative recombination of carriers in a two-dimensional electron gas (2DEG) in undoped and modulation-doped Al x Ga 1− x N/GaN heterostructures grown by…”
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The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Lambert, D.J.H., Huang, J.J., Shelton, B.S., Wong, M.M., Chowdhury, U., Zhu, T.G., Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.

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Novel 600 V GaN Schottky diode delivering SiC performance at Si prices by Cohen, I., Ting Gang Zhu, Linlin Liu, Murphy, M., Pophristic, M., Pabisz, M., Gottfried, M., Shelton, B.S., Peres, B., Ceruzzi, A., Stall, R.A.

“…GaN Schottky diodes offer the same performance benefits as SiC-based devices at a significantly lower cost. A 600 V GaN-based Schottky diode was substituted in…”
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Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition by HO KI KWON, EITING, C. J, LAMBERT, D. J. H, SHELTON, B. S, WONG, M. M, ZHU, T. G, DUPUIS, R. D

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Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition by Ki Kwon, Ho, Eiting, C.J, Lambert, D.J.H, Wong, M.M, Shelton, B.S, Zhu, T.G, Liliental-Weber, Z, Benamura, M, Dupuis, R.D

“…We have investigated the time decay of the photoluminescence (PL) at room temperature of high-quality (HQ) and low-quality (LQ) GaN epitaxial layers grown on…”
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Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition by Eiting, C.J., Lambert, D.J.H., Kwon, H.K., Shelton, B.S., Wong, M.M., Zhu, T.G., Dupuis, R.D.

“…We report the growth and characterization of high‐quality AlGaN/GaN heterojunctions by low‐pressure metalorganic chemical vapor deposition. We have measured…”
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Optical metastability in InGaN/GaN heterostructures by Shmagin, I.K., Muth, J.F., Kolbas, R.M., Dupuis, R.D., Grudowski, P.A., Eiting, C.J., Park, J., Shelton, B.S., Lambert, D.J.H.

“…Optical metastability was studied in an InGaN/GaN single heterostructure. It was observed that an exposure to a high intensity ultraviolet (UV) light…”
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Optical properties of InGaN double heterostructures and quantum wells grown by metalorganic chemical vapor deposition by Dupuis, R.D., Grudowski, P.A., Eiting, C.J., Park, J., Shelton, B.S., Lambert, D.J.H., Shmagin, I., Kolbas, R.M.

“…High-quality III-V nitride epitaxial films and heterostructures are of great importance for a wide variety of electronic and optoelectronic devices. In this…”
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High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors by Lambert, D.J.H., Yang, B., Li, T., Collins, C.J., Wong, M.M., Chowdhury, U., Shelton, B.S., Beck, A.L., Campbell, J.C., Dupuis, R.D.

“…We report the growth, fabrication, and characterization of Al/sub x/Ga/sub 1-x/N(0.44/spl les/x/spl les/0.58) heteroepitaxial back-illuminated solar-blind…”
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