Search Results - "Shekhawat, Aniruddh"

Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films by Walters, Glen, Shekhawat, Aniruddh, Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu

“…The emerging field of ferroelectric hafnium zirconium oxide has garnered increased attention recently for its wide array of applications from nonvolatile…”
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Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates by Walters, Glen, Shekhawat, Aniruddh, Rudawski, Nicholas G., Moghaddam, Saeed, Nishida, Toshikazu

“…Using a tiered deposition approach, Hf1-xZrxO2 (HZO) films with varying atomic layer deposition (ALD) cycles from 36 to 52 cycles were grown on Ge, Ir, and TiN…”
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Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes by An, Yanbin, Shekhawat, Aniruddh, Behnam, Ashkan, Pop, Eric, Ural, Ant

“…Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric,…”
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Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films by Shekhawat, Aniruddh, Walters, Glen, Chung, Ching-Chang, Garcia, Roberto, Liu, Yang, Jones, Jacob, Nishida, Toshikazu, Moghaddam, Saeed

“…The effect of furnace annealing on the ferroelectricity and crystal phase of Hf0.5ZrO2 (HZO) ultrathin films is studied as a function of film thickness. HZO…”
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Ferroelectric Properties of HfO2-Based Thin Films and Their Application for Low Power and Scalable Ferroelectric Tunnel Junctions by Shekhawat, Aniruddh Singh

“…Ferroelectric random-access memories (FRAM) based on conventional perovskite materials are non-volatile with fast read/write (ns access times) operations but…”
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