MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence

Optically pumped stimulated emission (SE) and time-resolved photoluminescence (TRPL) of InGaN/(In)GaN multiple quantum wells (MQWs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) were systemically studied as a function of well and barrier thickness. The SE threshold pumping den...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 221; no. 1; pp. 373 - 377
Main Authors:	Shee, Sang Kee, Kwon, Y.H, Lam, J.B, Gainer, G.H, Park, G.H, Hwang, S.J, Little, B.D, Song, J.J
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-12-2000 Elsevier
Subjects:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Deposition technology Electronics Exact sciences and technology Iii-v semiconductors Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings; film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) MOCVD MQW Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stimulated emission Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Time-resolved photoluminescence 78.47.+p MQW Stimulated emission Time-resolved photoluminescence 78.55.−m 81.15.Gh MOCVD 81.05.Ea 78.45.+h Inorganic compounds Gallium nitrides Photoluminescence Multiple quantum well Optical pumping Crystal growth from vapors Experimental study Laser diodes Thin films CVD Thickness Multilayers Time resolution Microelectronic fabrication Low pressure Size effect Indium nitrides III-V semiconductors
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Summary:	Optically pumped stimulated emission (SE) and time-resolved photoluminescence (TRPL) of InGaN/(In)GaN multiple quantum wells (MQWs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) were systemically studied as a function of well and barrier thickness. The SE threshold pumping density and photoluminescence (PL) decay time were found to be strongly dependent on the well and barrier thickness. As the barrier thickness increases, the PL efficiencies and room temperature PL decay time significantly increase, which can be attributed to the improved structural quality, as seen by the reciprocal lattice mapping results. The lowest SE threshold density of 58 kW/cm 2 was obtained for the 3.0 nm well and 15.0 nm barrier sample. The experimental results indicate that the enhanced optical quality of samples with larger barrier thicknesses can be readily applied to the fabrication of InGaN/(In)GaN LDs.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(00)00716-8