Search Results - "Shealy, J.B."

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  1. 1

    Miniaturized Ultrawide Bandwidth WiFi 6E Diplexer Implementation Using XBAW RF Filter Technology by Gupta, S., Mehdizadeh, E., Cheema, K., Shealy, J.B.

    “…In a WiFi 6/6E system, simultaneous operation of bands such as UNII-l to UNII-4 (HB) and UNII-5 to UNII-8 (UHB) is desirable for high data rate. This presents…”
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    Conference Proceeding
  2. 2

    Wideband 6 GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly Sc-doped AlN Thin Film by Kim, D., Moreno, G., Bi, F., Winters, M., Houlden, R., Aichele, D., Shealy, J.B.

    “…A Wi-Fi 6E BAW filter with relative bandwidth of 12% (665 MHz at 5.5 GHz) and good rejection over the whole 6 GHz band (1200 MHz) is reported. The Wi-Fi 6E…”
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    Conference Proceeding
  3. 3

    Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs by Trew, R.J., Yueying Liu, Bilbro, L., Weiwei Kuang, Vetury, R., Shealy, J.B.

    “…Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices…”
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    Journal Article
  4. 4

    452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon by Shen, Y., Patel, P., Vetury, R., Shealy, J.B.

    “…5.66 GHz bulk acoustic wave filters, utilizing doped aluminum nitride (AlN), are reported. The filters exhibit high -3 dB bandwidth of 452 MHz (8% fractional…”
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    Conference Proceeding
  5. 5

    Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs) by Shealy, J.B., Smart, J.A., Shealy, J.R.

    “…The first report of AlGaN/GaN HEMT-based voltage controlled oscillators (VCOs) is presented. Varactor-tuned oscillators implemented using distributed networks…”
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    Journal Article
  6. 6

    High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications by Vetury, R., Wei, Y., Green, D.S., Gibb, S.R., Mercier, T.W., Leverich, K., Garber, P.M., Poulton, M.J., Shealy, J.B.

    “…We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate…”
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    Conference Proceeding
  7. 7

    Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures by Vetury, R., Shealy, J.B., Green, D.S., McKenna, J., Brown, J.D., Gibb, S.R., Leverich, K., Garber, P.M., Poulton, M.J.

    “…AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal…”
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    Conference Proceeding
  8. 8

    Optimization of Gallium nitride high power technology for commercial and military applications by Shealy, J.B., Lefevre, M., Anderson, B., Runton, D., Poulton, M.J., Martin, J.

    “…Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal…”
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    Conference Proceeding
  9. 9

    Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide by Brown, J.D., Lee, S., Lieu, D., Martin, J., Vetury, R., Poulton, M.J., Shealy, J.B.

    “…Gallium Nitride based HEMTs are a promising technology for high voltage, high power, high frequency applications. In addition to the potential for high…”
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    Conference Proceeding
  10. 10

    RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's by Trew, R.J., Liu, Y., Kuang, W., Yin, H., Bilbro, G.L., Shealy, J.B., Vetury, R., Garber, P.M., Poulton, M.J.

    “…HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated…”
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    Conference Proceeding
  11. 11

    GaN Wide Band Power Integrated Circuits by Conlon, J.P., Zhang, N., Poulton, M.J., Shealy, J.B., Vetury, R., Green, D.S., Brown, J.D., Gibb, S.

    “…Gallium nitride (GaN) amplifiers have demonstrated very high power density as well as wide bandwidth in previous research. This paper examines their use in…”
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    Conference Proceeding
  12. 12

    Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction by Poulton, M.J., Leverich, W.K., Shealy, J.B., Vetury, R., Brown, J.D., Green, D.S., Gibb, S.R.

    “…The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and…”
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    Conference Proceeding
  13. 13

    High-power AlGaN/GaN FET-based VCO sources by Shealy, J.B., Smart, J.A., Shealy, J.R.

    “…The first report of multi-watt AlGaN/GaN FET-based voltage-controlled oscillators (VCO's) with high efficiency is presented. Varactor-tuned oscillators…”
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    Conference Proceeding
  14. 14

    High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs by Shealy, J.B., Liu, T.Y., Thompson, M.A., Wilson, R.G., Nguyen, L.D., Mishra, U.K.

    Published in IEEE electron device letters (01-12-1995)
    “…High threshold voltage uniformity p/sup +/-GaInAs/n-AlInAs/GaInAs millimeter-wave junction-modulated HEMT's are reported. Devices with 0.2 μm gatelength…”
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    Journal Article
  15. 15

    High-speed p/sup +/ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD by Hashemi, M.M., Shealy, J.B., DenBaars, S.P., Mishra, U.K.

    Published in IEEE electron device letters (01-02-1993)
    “…The authors report the high-frequency characteristics of a new type of InP-JFET having p/sup +/ GaInAs as the gate material grown by MOCVD (metalorganic…”
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    Journal Article
  16. 16

    High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts by Shealy, J.B., Matloubian, M., Liu, T.Y., Thompson, M.A., Hashemi, M.M., Denbaars, S.P., Mishra, U.K.

    Published in IEEE electron device letters (01-11-1996)
    “…This letter reports DC and RF performance of 0.25 μm gatelength GaInAs/InP composite channel HEMT's with nonalloyed, regrown ohmic contacts by MOCVD. Regrown…”
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    Journal Article
  17. 17

    0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs by Shealy, J.B., Matloubian, M., Liu, T.Y., Lam, W., Ngo, C.

    “…The power performance of Ga/sub 0.47/In/sub 0.53/As/InP composite channel HEMTs at 7 GHz is presented. Devices with a gate width of 300 /spl mu/m exhibit 0.9…”
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    Conference Proceeding
  18. 18

    A 2 watt Ku-band linear (multi-carrier) transmit module for VSAT applications by Shealy, J.B., Jackson, T., Rachlin, A., Poulton, M., Bukhari, N., Ditzler, K., Gong, X., Sumpter, L., Weeks, D.

    “…This paper describes the functionality and performance of a 2 watt Ku-band linear (multi-carrier) transmit module used in the outdoor unit (ODU) of very small…”
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    Conference Proceeding Journal Article
  19. 19

    High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD by Shealy, J.B., Hashemi, M.M., Kiziloglu, K., DenBaars, S.P., Mishra, U.K., Liu, T.K., Brown, J.J., Lui, M.

    Published in IEEE electron device letters (01-12-1993)
    “…A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs…”
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    Journal Article
  20. 20

    High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD by Shealy, J.B., Hashemi, M.M., Kiziloglu, K., DenBaars, S.P., Misra, U.K., Liu, T.K., Brown, J.J., Liu, M.M.

    Published in IEEE transactions on electron devices (01-11-1993)
    “…Summary form only given. The authors present a technology for increasing the gate-drain breakdown of AlInAs/GaInAs HEMTs (high electron mobility transistors)…”
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    Journal Article