Search Results - "Shealy, J.B."
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Miniaturized Ultrawide Bandwidth WiFi 6E Diplexer Implementation Using XBAW RF Filter Technology
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19-06-2022)“…In a WiFi 6/6E system, simultaneous operation of bands such as UNII-l to UNII-4 (HB) and UNII-5 to UNII-8 (UHB) is desirable for high data rate. This presents…”
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Conference Proceeding -
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Wideband 6 GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly Sc-doped AlN Thin Film
Published in 2021 IEEE MTT-S International Microwave Symposium (IMS) (07-06-2021)“…A Wi-Fi 6E BAW filter with relative bandwidth of 12% (665 MHz at 5.5 GHz) and good rejection over the whole 6 GHz band (1200 MHz) is reported. The Wi-Fi 6E…”
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Conference Proceeding -
3
Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs
Published in IEEE transactions on microwave theory and techniques (01-05-2006)“…Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices…”
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4
452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01-12-2019)“…5.66 GHz bulk acoustic wave filters, utilizing doped aluminum nitride (AlN), are reported. The filters exhibit high -3 dB bandwidth of 452 MHz (8% fractional…”
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Conference Proceeding -
5
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
Published in IEEE microwave and wireless components letters (01-06-2001)“…The first report of AlGaN/GaN HEMT-based voltage controlled oscillators (VCOs) is presented. Varactor-tuned oscillators implemented using distributed networks…”
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High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (17-06-2005)“…We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate…”
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Conference Proceeding -
7
Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01-01-2006)“…AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal…”
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8
Optimization of Gallium nitride high power technology for commercial and military applications
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01-10-2009)“…Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal…”
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Conference Proceeding -
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Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide
Published in 2007 IEEE/MTT-S International Microwave Symposium (01-06-2007)“…Gallium Nitride based HEMTs are a promising technology for high voltage, high power, high frequency applications. In addition to the potential for high…”
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Conference Proceeding -
10
RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01-06-2006)“…HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated…”
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Conference Proceeding -
11
GaN Wide Band Power Integrated Circuits
Published in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium (01-11-2006)“…Gallium nitride (GaN) amplifiers have demonstrated very high power density as well as wide bandwidth in previous research. This paper examines their use in…”
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Conference Proceeding -
12
Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01-06-2006)“…The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and…”
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13
High-power AlGaN/GaN FET-based VCO sources
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)“…The first report of multi-watt AlGaN/GaN FET-based voltage-controlled oscillators (VCO's) with high efficiency is presented. Varactor-tuned oscillators…”
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14
High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs
Published in IEEE electron device letters (01-12-1995)“…High threshold voltage uniformity p/sup +/-GaInAs/n-AlInAs/GaInAs millimeter-wave junction-modulated HEMT's are reported. Devices with 0.2 μm gatelength…”
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15
High-speed p/sup +/ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD
Published in IEEE electron device letters (01-02-1993)“…The authors report the high-frequency characteristics of a new type of InP-JFET having p/sup +/ GaInAs as the gate material grown by MOCVD (metalorganic…”
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16
High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts
Published in IEEE electron device letters (01-11-1996)“…This letter reports DC and RF performance of 0.25 μm gatelength GaInAs/InP composite channel HEMT's with nonalloyed, regrown ohmic contacts by MOCVD. Regrown…”
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0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs
Published in Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (1997)“…The power performance of Ga/sub 0.47/In/sub 0.53/As/InP composite channel HEMTs at 7 GHz is presented. Devices with a gate width of 300 /spl mu/m exhibit 0.9…”
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18
A 2 watt Ku-band linear (multi-carrier) transmit module for VSAT applications
Published in 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) (1999)“…This paper describes the functionality and performance of a 2 watt Ku-band linear (multi-carrier) transmit module used in the outdoor unit (ODU) of very small…”
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19
High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
Published in IEEE electron device letters (01-12-1993)“…A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs…”
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20
High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
Published in IEEE transactions on electron devices (01-11-1993)“…Summary form only given. The authors present a technology for increasing the gate-drain breakdown of AlInAs/GaInAs HEMTs (high electron mobility transistors)…”
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