Search Results - "Shcherbachev, K.D"

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy by A.Y. Polyakov, Jin-Hyeon Yun, A.S. Usikov, E.B. Yakimov, N.B. Smirnov, K.D. Shcherbachev, H. Helava, Y.N. Makarov, S.Y. Kurin, N.M. Shmidt, O.I. Rabinovich, S.I. Didenko, S.A. Tarelkin, B.P. Papchenko, In-Hwan Lee

“…Electrical and luminescent properties of near-UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations…”
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Strengthening of mechanically alloyed Al-based alloy with high Zr contents by Prosviryakov, A.S., Shcherbachev, K.D.

“…Al-Cu-Mn matrix alloy in the form of chips with zirconium in amounts of 5, 10 and 20wt% was subjected to mechanical alloying. After milling in a ball mill for…”
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Investigation of nanostructured Al-10wt.% Zr material prepared by ball milling for high temperature applications by Prosviryakov, A.S., Shcherbachev, K.D., Tabachkova, N.Yu

“…Ground chips of as-cast Al-10wt.% Zr alloy were subjected to mechanical alloying (MA) with 5vol.% of nanodiamond addition in a high energy planetary ball-mill…”
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Investigation of nanostructured Al-10 wt.% Zr material prepared by ball milling for high temperature applications by Prosviryakov, A.S., Shcherbachev, K.D., Tabachkova, N.Yu

“…Ground chips of as-cast Al-10 wt.% Zr alloy were subjected to mechanical alloying (MA) with 5 vol.% of nanodiamond addition in a high energy planetary…”
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Microstructural characterization of mechanically alloyed Al–Cu–Mn alloy with zirconium by Prosviryakov, A.S., Shcherbachev, K.D., Tabachkova, N.Yu

“…An evolution of Al–Cu–Mn alloy microstructure during its mechanical alloying with zirconium 20wt% and after subsequent annealing was studied by X-ray…”
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Modification of Zn ion hot implanted Si by swift Xe ion irradiation by Privezentsev, V.V., Skuratov, V.A., Kulikauskas, V.S., Zilova, O.S., Burmistrov, A.A., Tabachkova, N.Yu, Eidelman, K.B., Shcherbachev, K.D.

“…HRTEM images of Zn implanted Si after Xe ion irradiation with fluence of 7.5 × 1014/cm2. [Display omitted] The single crystal CZ n-Si(1 0 0) substrates were…”
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Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy by Polyakov, A.Y., Smirnov, N.B., Yakimov, E.B., Usikov, A.S., Helava, H., Shcherbachev, K.D., Govorkov, A.V., Makarov, Yu N., Lee, In-Hwan

“…•GaN films are prepared by hydride vapor phase epitaxy (HVPE).•Residual donors and deep traps show a minimum density versus growth temperature.•This minimum is…”
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Effect of energy density on the target on Sn[O.sub.2]:Sb film properties when using a high-speed particle separator by Parshina, L.S, Khramova, O.D, Novodvorsky, O.A, Lotin, A.A, Petukhov, I.A, Putilin, F.N, Shcherbachev, K.D

“…Sn[O.sub.2]:Sb thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing…”
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Near surface layer evolution in Zn+ ions implanted Si upon annealing treatments by Saraykin, V.V., Shcherbachev, K.D., Petrov, D.V., Privezentsev, V.V.

“…► SIMS revealed a significant redistribution of Zn atoms after annealing. ► After thermal annealing at 800°C nanoparticles on the sample surface were revealed…”
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Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of V[O.sub.2] thin films by Novodvorsky, O.A, Parshina, L.S, Khramova, O.D, Mikhalevsky, V.A, Shcherbachev, K.D, Panchenko, V. Ya

“…The technique of pulse laser deposition with the separation of plume drops is used to produce V[O.sub.2] thin films on sapphire(0001) and silicon(111)…”
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Characterization of crystal structure features of a SIMOX substrate by Eidelman, K.B., Shcherbachev, K.D., Tabachkova, N.Yu, Podgornii, D.A., Mordkovich, V.N.

“…The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy…”
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Optical properties, defects, and composition of La3Ga5.5Ta0.5O14 crystals by Buzanov, O. A., Voronova, M. I., Zabelina, E. V., Kozlova, A. P., Kozlova, N. S., Skryleva, E. A., Spassky, D. A., Shcherbachev, K. D.

“…La 3 Ga 5.5 Ta 0.5 O 14 crystals were grown in pure argon and in an argon + 2% oxygen atmosphere. The growth atmosphere significantly effects the elemental…”
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Distribution of dislocations in AlN crystals grown on evaporating SiC substrates by Argunova, T.S., Gutkin, M.Yu, Shcherbachev, K.D., Kazarova, O.P., Mokhov, E.N., Jung, Ho Je

“…By the use of high-resolution X-ray diffractometry and synchrotron radiation topography, the distribution of dislocations in AlN crystals grown on evaporating…”
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Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures by Shcherbachev, K. D., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M.

“…Specific features of formation of radiation defects in thin silicon layer of silicon-on-insulator (SOI) structures have been studied. It is shown that there…”
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Structure of InP single crystals irradiated with reactor neutrons by Boiko, V.M., Bublik, V.T., Voronova, M.I., Kolin, N.G., Merkurisov, D.I., Shcherbachev, K.D.

“…The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast neutrons and the full spectrum…”
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Electrical and structural properties of InSb crystals irradiated with reactor neutrons by Boiko, V.M., Bublik, V.T., Voronova, M.I., Kolin, N.G., Merkurisov, D.I., Shcherbachev, K.D.

“…The structural transformations in InSb crystals irradiated with fast neutrons ( E > 0.1 MeV ) and the full spectrum of reactor neutrons with the ratio of the…”
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