Search Results - "Shcheglov, M. P."

Properties of Semipolar GaN Grown on a Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

“…Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si x N y…”
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Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy by Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., Konenkov, S. D., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

“…Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon…”
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Frozen Superparaelectric State of Local Polar Regions in GdMn2O5 and Gd0.8Ce0.2MnO5 by Sanina, V. A., Khannanov, B. Kh, Golovenchits, E. I., Shcheglov, M. P.

“…A comparative study of the dielectric properties and electric polarization of multiferroics GdMn 2 O 5 and Gd 0.8 Ce 0.2 MnO 5 has been carried out in the…”
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Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition by Nikolaev, V. I., Timashov, R. B., Stepanov, A. I., Stepanov, S. I., Chikiryaka, A. V., Shcheglov, M. P., Polyakov, A. Ya

“…Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted…”
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Electric Polarization in YCrO3 Induced by Restricted Polar Domains of Magnetic and Structural Natures by Sanina, V. A., Khannanov, B. Kh, Golovenchits, E. I., Shcheglov, M. P.

“…The electric polarization induced by local polar domains of two types (phase separation domains of magnetic nature and structure-distorted domains) has been…”
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A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films by Koryakin, A. A., Kukushkin, S. A., Osipov, A.V., Sharofidinov, Sh. Sh, Shcheglov, M. P.

“…In the article, using the example of growing aluminum nitride (AlN) on (110) orientation silicon (Si) with a silicon carbide (SiC) buffer layer, a method for…”
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Electric Polarization in ErCrO3 Induced by Restricted Polar Domains by Sanina, V. A., Khannanov, B. Kh, Golovenchits, E. I., Shcheglov, M. P.

“…Electric polarization in ErCrO 3 single crystals has been investigated in the temperature range of 5‒370 K. Ferroelectric ordering has not been found in any of…”
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On the Structural Perfection of Large-Diameter Silicon Carbide Ingots by Bykov, Yu. O., Lebedev, A. O., Shcheglov, M. P.

“…4 H -silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our…”
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Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers by Kyutt, R. N., Shcheglov, M. P.

“…X-ray diffraction (XRD) in asymmetric Bragg geometry was measured and XRD intensity distribution maps in the reciprocal space were constructed for GaN…”
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Separation of Phases and Charge States in Relaxor Ferroelectric PbCo1/3Nb2/3O3 by Khannanov, B. Kh, Zalessky, V. G., Golovenchits, E. I., Sanina, V. A., Smirnova, T. A., Shcheglov, M. P., Bokov, V. A., Lushnikov, S. G.

“…The permittivity, conductivity, electric polarization, and features of high-resolution X-ray diffraction scattering of a relaxor ferroelectric PbCo 1/3 Nb 2/3…”
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Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate by Nikolaev, V. I., Pechnikov, A. I., Guzilova, L. I., Chikiryaka, A. V., Shcheglov, M. P., Nikolaev, V. V., Stepanov, S. I., Vasil’ev, A. A., Shchemerov, I. V., Polyakov, A. Ya

“…Epitaxial layers of a new wide-band semiconductor (α-Ga 2 O 3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are…”
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Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate by Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

“…Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 1) on a V -shaped nanostructured Si(100) substrate with…”
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Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering by Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

“…Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron…”
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Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate by Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

“…We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy…”
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Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

“…We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown…”
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A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures by Lebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu, Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P.

“…Transmission electron microscopy and the cathodoluminescence method have been used to study the transition region in 3C–SiC/6H–SiC heterostructures. It is…”
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X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire by Kyutt, R. N., Shcheglov, M. P., Ratnikov, V. V., Kalmykov, A. E.

“…Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were…”
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Nano-Scale Frustrated Cd2Nb2O7 Ferroics by Kolpakova, N. N., Czarnecki, P., Syrnikov, P. P., SHCHEGLOV, M. P., Szczepanska, L.

“…The dielectric response (100 Hz to 6 MHz), relaxation-time distribution, dielectric hysteresis loops and polarization obtained from pyroelectric current have…”
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Recent Understanding the Dielectric Relaxation Processes and Dipolar Disordering in High-Symmetry Relaxor System Cd2Nb2O7 by KOLPAKOVA, N. N., CZARNECKI, P., NAWROCIK, W., SHCHEGLOV, M. P., SZCZEPANSKA, L.

“…Unusual polydispersive dielectric response of undiluted Cd 2 Nb 2 O 7 pyrochlore between 100 Hz to 6 MHz and 77 to 300 K is reported. Below T C ≈ 198 K, the…”
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Bulk gallium nitride: preparation and study of properties by Zhilyaev, Yu. V., Nasonov, A. V., Raevski, S. D., Rodin, S. N., Shcheglov, M. P., Davydov, V. Yu

“…Specularly smooth transparent layers of gallium nitride have been prepared of an area up to 2 × 3 cm2 and thickness up to 1 mm. Growth of GaN wafers was…”
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