Search Results - "Shauly, E.N."

Improvement of Temperature Coefficient of Resistance by Co-Implantation of Argon or Xenon or Fluorine in Boron Implanted Polysilicon Resistors by Ashuah, I., Shauly, E.N., Shacham-Diamand, Y.

“…This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors,…”
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MBPCA application for fault detection in NMOS fabrication by Lachman-Shalem, S., Haimovitch, N., Shauly, E.N., Lewin, D.R.

“…This paper describes the application of model-based principal component analysis (MBPCA) to the identification and isolation of faults in NMOS manufacture. In…”
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The effect of deposition process parameters and post-deposition treatments on the poly- and amorphous-silicon morphology by Edrei, R, Shauly, E.N, Roizin, Y, Hoffman, A

“…The surface roughness and topography of low-pressure chemical vapor deposited (LPCVD) silicon films have been investigated by atomic force microscopy (AFM) in…”
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Influence of batch-to-batch substrate variation and cone effect on high energy implant distribution profile by Hai, Y., Shauly, E.N.

“…High-energy well implants for advanced 0.18μm CMOS technologies are performed at normal incidence angles for minimizing the shadowing caused by the thick…”
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Experimental extraction of point defects parameters needed for 2-D process modeling using reverse modeling by Shauly, E.N., Ghez, R., Komem, Y.

“…This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the…”
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