Search Results - "Shashev, Y."

Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy by Barchuk, M., Röder, C., Shashev, Y., Lukin, G., Motylenko, M., Kortus, J., Pätzold, O., Rafaja, D.

“…The correlation between the residual stress and the density of threading dislocations was investigated in polar GaN layers that were grown by using hydride…”
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Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy by Lukin, G., Röder, C., Niederschlag, E., Shashev, Y., Mühle, U., Pätzold, O., Kortus, J., Rafaja, D., Stelter, M.

“…A novel approach to deposit GaN layers directly on a sapphire substrate by Hydride Vapor Phase Epitaxy is presented. The two‐step deposition process includes…”
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