Search Results - "Sharma, Satinder K."
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Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface
Published in Journal of alloys and compounds (05-04-2020)“…Cost-effective integration with existing silicon CMOS electronics has been one of the primary motivations for most of the emerging non-silicon devices. In this…”
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2
Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al2O3/GO/graphene/SiO2/p-Si/Au non-volatile (FLASH) applications
Published in Applied physics letters (18-06-2018)“…The excellent electronic properties of graphene such as high density of states, work-function, and low dimensionality promote the usage of graphene as an…”
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3
PZT–PDMS composite for active damping of vibrations
Published in Composites science and technology (22-03-2013)“…A Lead Zirconate-Titanate (PZT)/poly-dimethylsiloxane (PDMS) based flexible composite is synthesized and investigated for its potential in significantly…”
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4
Stability and Dewetting of Metal Nanoparticle Filled Thin Polymer Films: Control of Instability Length Scale and Dynamics
Published in ACS nano (27-07-2010)“…We investigate the influence of gold nanoparticle addition on the stability, dewetting, and pattern formation in ultrathin polymer−nanoparticle (NP) composite…”
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Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors
Published in Applied physics letters (13-10-2014)“…Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure with 20 nm thin lead zirconate titanate (PZT) ferroelectric film and 6 nm ultrathin high-κ…”
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6
Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications
Published in ACS applied materials & interfaces (11-01-2017)“…The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate]…”
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7
Organoiodine Functionality Bearing Resists for Electron-Beam and Helium Ion Beam Lithography: Complex and Sub-16 nm Patterning
Published in ACS applied electronic materials (25-05-2021)“…Given the current need for resist materials for patterning transistors with ultralow nodes, there has been a quest for developing resists with improved…”
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8
Enhanced mechanical properties of the high-resolution EUVL patterns of hybrid photoresists containing hexafluoroantimonate
Published in Microelectronic engineering (05-07-2018)“…The present study investigates the mechanical properties of hybrid photoresists in the context of their pattern-collapse behaviors. The mechanical properties…”
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9
Facile DUV Irradiated Solution-Processed ZrO2/In2O3 for Low Voltages FET Applications
Published in IEEE transactions on electron devices (01-06-2024)“…Prime challenges for device integration in metal-oxide semiconductors are low voltage operations, low thermal budget, and large area stable thin films for…”
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10
An efficient hydrogen gas sensor based on hierarchical Ag/ZnO hollow microstructures
Published in Sensors and actuators. B, Chemical (01-11-2021)“…•A new hydrogen sensing material based on Ag/ZnO hollow tubes-like microstructure.•Ag nanoparticles improves the gas sensing performance of ZnO sensor for…”
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Hardware-Efficient and Short Sensing-Time Multicoset-Sampling Based Wideband Spectrum Sensor for Cognitive Radio Network
Published in IEEE transactions on circuits and systems. I, Regular papers (01-03-2023)“…This work proposes implementation friendly algorithm for multicoset sampling based wideband spectrum sensing that alleviates computational space and enables…”
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12
Unveiling Thermal Effects on Sn-Doped β-Ga2O3 Schottky Barrier Diodes on Sapphire for High-Temperature Power Electronics
Published in IEEE transactions on electron devices (01-03-2024)“…The study investigates the performance of Schottky barrier diodes (SBDs) fabricated on high-quality Sn-doped <inline-formula> <tex-math notation="LaTeX">\beta…”
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13
Low-Latency and Reconfigurable VLSI-Architectures for Computing Eigenvalues and Eigenvectors Using CORDIC-Based Parallel Jacobi Method
Published in IEEE transactions on very large scale integration (VLSI) systems (01-08-2022)“…This article proposes a low-latency parallel Jacobi-method-based algorithm for computing eigenvalues and eigenvectors of <inline-formula> <tex-math…”
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14
Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices
Published in ACS applied electronic materials (27-07-2021)“…Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and…”
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15
Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors
Published in IEEE transactions on electron devices (01-04-2023)“…There are indelible challenges related to transistor action and realization of emerging two-dimensional van der Waals (vdW) multilayer (2D<inline-formula>…”
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16
Room temperature ammonia gas sensor using Meta Toluic acid functionalized graphene oxide
Published in Materials chemistry and physics (15-01-2020)“…A gas sensor has been fabricated by depositing the thin film of Functionalized Graphene Oxide (GO) using Langmuir Blodget (LB) technique on SiO2/Si wafers…”
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17
Sodium Niobate Nanowires Embedded PVA‐Hydrogel‐Based Triboelectric Nanogenerator for Versatile Energy Harvesting and Self‐Powered CO Gas Sensor
Published in Small (Weinheim an der Bergstrasse, Germany) (01-09-2024)“…The surging demand for sustainable energy solutions and adaptable electronic devices has led to the exploration of alternative and advanced power sources…”
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18
Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications
Published in Applied physics letters (09-08-2021)“…Extended data retention is a cardinal impediment for ferroelectric memories and serves a pivotal role for nonvolatile memory applications. Here, nonvolatile…”
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19
Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography
Published in ACS applied materials & interfaces (29-04-2020)“…Hybrid metal–organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to…”
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20
Low-Temperature Processed Ni/GeSn Optimal Contacts for Junctionless GeSn-on-Si FinFETs
Published in IEEE transactions on electron devices (01-09-2024)“…For junctionless FETs (JLFETs), an optimal ohmic contact is needed to achieve maximum drive current. The scaling of the source/drain (S/D) contact area impacts…”
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