Search Results - "Sharma, Divanshu"

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  1. 1

    Estimation of MFFPI for flood hazards assessment using geospatial technology in the Tawi Basin, India by Taloor, Ajay Kumar, Sharma, Savati, Sharma, Divanshu, Chib, Rajesh, Jasrotia, Rakesh, Gupta, Surbhi, Kothyari, Girish Ch, Mehta, Pankaj, Kale, Ravindra Vitthal

    Published in Geosystems and geoenvironment (01-02-2024)
    “…•Emphasis on the flood hazards of the Tawi Basin.•Various terrain and hydrological parameters to understand the flash flood potential.•Determination of AHP…”
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  2. 2
  3. 3

    Volcanic Eruption in the Nanoworld: Efficient Oxygen Exchange at the Si/SnO2 Interface (Small 35/2024) by Liu, Poting, Makarova, Anna, Freiberg, Katharina, Grinter, David C., Sharma, Divanshu, Ferrer, Pilar, Chuvenkova, Olga, Deckert‐Gaudig, Tanja, Turishchev, Sergey, Lippmann, Stephanie, Sivakov, Vladimir

    “…Oxygen Exchange The link between the macro‐ and nanoworld is one of the most important aspects of modern nanoscience. A unique phenomenon related to the…”
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  4. 4

    Volcanic Eruption in the Nanoworld: Efficient Oxygen Exchange at the Si/SnO2 Interface by Liu, Poting, Makarova, Anna, Freiberg, Katharina, Grinter, David C., Sharma, Divanshu, Ferrer, Pilar, Chuvenkova, Olga, Deckert‐Gaudig, Tanja, Turishchev, Sergey, Lippmann, Stephanie, Sivakov, Vladimir

    “…Here, a phenomenon of efficient oxygen exchange between a silicon surface and a thin layer of tin dioxide during chemical vapor deposition is presented, which…”
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  5. 5

    Volcanic Eruption in the Nanoworld: Efficient Oxygen Exchange at the Si/SnO 2 Interface by Liu, Poting, Makarova, Anna, Freiberg, Katharina, Grinter, David C, Sharma, Divanshu, Ferrer, Pilar, Chuvenkova, Olga, Deckert-Gaudig, Tanja, Turishchev, Sergey, Lippmann, Stephanie, Sivakov, Vladimir

    “…Here, a phenomenon of efficient oxygen exchange between a silicon surface and a thin layer of tin dioxide during chemical vapor deposition is presented, which…”
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    Journal Article
  6. 6

    Chlorine doping of MoSe2 flakes by ion implantation by Prucnal, Slawomir, Hashemi, Arsalan, Ghorbani-Asl, Mahdi, Hübner, René, Duan, Juanmei, Wei, Yidan, Sharma, Divanshu, Zahn, Dietrich R. T, Ziegenrücker, René, Kentsch, Ulrich, Krasheninnikov, Arkady V, Helm, Manfred, Zhou, Shengqiang

    Published 24-09-2021
    “…Nanoscale 13, 5834 (2021) The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering…”
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    Journal Article