Search Results - "Sharma, B.G."

Study of morphological, elemental, optical and excitation wavelength dependent red photoluminescence in Eu3+ doped Li2SrSiO4 for solid state lighting by Tiwari, Kanchan, Sharma, B.G., Brahme, Nameeta, Bisen, D.P., Richhariya, Tripti, Verma, Anita, Sahu, Somnath, Sinha, Akash

“…A comprehensive investigation of Eu3+ doped Li2SrSiO4 phosphors synthesized via the solid-state reaction method was conducted. XRD confirmed the crystalline…”
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PVDF and related copolymers, their structural and electrical properties as criteria in electrical insulation by Sharma, B.G.

“…PVDF and its copolymers have been developed very recently and therefore there are only few manufacturers is the world. Because of unique structure these…”
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Breakdown phenomena in heterogenous insulation systems by Sharma, B.G.

“…Dielectric breakdown In solids is important phenomena and it is only indicative value. For design purpose proof voltage value should be taken. Because of…”
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RAJA CHETSINGH OF BENARAS AND THE MARATHAS by Sharma, B.G., Handiekar, V. N.

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High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node by Fox, R., Hinsinger, O., Richard, E., Sabouret, E., Berger, T., Goldberg, C., Humbert, A., Imbert, G., Brun, P., Ollier, E., Maurice, C., Guillermet, M., Monget, C., Plantier, V., Bono, H., Zaleski, M., Mellier, M., Jacquemin, J.P., Flake, J., Sharma, B.G., Broussous, L., Farcy, A., Arnal, V., Gonella, R., Maubert, S., Girault, V., Vannier, P., Reber, D., Schussler, A., Mueller, J., Besling, W.

“…An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material…”
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Demonstration of an extendable and industrial 300mm BEOL integration for the 65-nm technology node by Hinsinger, O., Fox, R., Sabouret, E., Goldberg, C., Verove, C., Besling, W., Brun, P., Josse, E., Monget, C., Belmont, O., Van Hassel, J., Sharma, B.G., Jacquemin, J.P., Vannier, P., Humbert, A., Bunel, D., Gonella, R., Mastromatteo, E., Reber, D., Farcy, A., Mueller, J., Christie, P., Nguyen, V.H., Cregut, C., Berger, T.

“…Given the much discussed challenges of interconnect scaling at the 65-nm node, the choice of process architecture is a key determinant of performance and…”
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