Search Results - "Shaoyan Di"

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  1. 1

    Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs by Cong Li, Yiqi Zhuang, Shaoyan Di, Ru Han

    Published in IEEE transactions on electron devices (01-11-2013)
    “…With the exact solution of the 2-D Poisson's equation in cylindrical coordinates, analytical subthreshold behavior models for junctionless cylindrical…”
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    Journal Article
  2. 2

    Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs by Chang, Pengying, Liu, Xiaoyan, Di, Shaoyan, Du, Gang

    Published in IEEE transactions on electron devices (01-03-2017)
    “…Ballistic transport in III-V semiconductors-based p-channel double-gate MOSFETs is theoretically evaluated. The valence band structure is calculated by solving…”
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    Journal Article
  3. 3

    Investigation of thermal effects on FinFETs in the quasi-ballistic regime by Yin, Longxiang, Shen, Lei, Di, Shaoyan, Du, Gang, Liu, Xiaoyan

    Published in Japanese Journal of Applied Physics (01-04-2018)
    “…In this work, the thermal effects of FinFETs in the quasi-ballistic regime are investigated using the Monte Carlo method. Bulk Si nFinFETs with the same fin…”
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    Journal Article
  4. 4

    Performance comparison of Si, III-V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver by Di, Shaoyan, Shen, Lei, Chang, Pengying, Zhao, Kai, Lu, Tiao, Du, Gang, Liu, Xiaoyan

    Published in Japanese Journal of Applied Physics (01-04-2017)
    “…A deterministic time-dependent Boltzmann transport equation (BTE) solver is employed to carry out a comparison work among 10 nm double-gate n-type MOSFETs with…”
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    Journal Article
  5. 5

    Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE by Di, Shaoyan, Zhao, Kai, Lu, Tiao, Du, Gang, Liu, Xiaoyan

    Published in Journal of computational electronics (01-09-2016)
    “…In this work, the transient characteristics of nanoscale field-effect transistors (FETs) have been investigated using a deterministic solver based on the…”
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    Journal Article
  6. 6

    High Performance Metal-Gate/High- GaN MOSFET With Good Reliability for Both Logic and Power Applications by Shih-Han Yi, Dun-Bao Ruan, Shaoyan Di, Xiaoyan Liu, Yung Hsien Wu, Chin, Albert

    “…The gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (μC ox ) of 335 μA/V 2 (410 mA/mm at L…”
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    Journal Article
  7. 7

    Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver by Shaoyan Di, Zhiyuan Lun, Pengying Chang, Lei Shen, Kai Zhao, Tiao Lu, Gang Du, Xiaoyan Liu

    “…We investigate the scattering mechanism in ultrashort double gate In 0.53 Ga 0.47 As nMOSFETs by deterministically solving Boltzmann transport equation (BTE)…”
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    Conference Proceeding
  8. 8

    Parameter calibration of drift-diffusion model in quasi-ballisitc transport region with Monte Carlo method by Lei Shen, Shaoyan Di, Longxiang Yin, Xiaoyan Liu, Gang Du

    “…As the device scaling down to sub-10nm, the quasi-ballistic transport becomes important. Some previous works have suggested using DD method to involve the…”
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    Conference Proceeding
  9. 9

    Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs by Shen, Lei, Di, Shaoyan, Yin, Longxiang, Liu, Xiaoyan, Du, Gang

    Published in Science China. Information sciences (01-06-2018)
    “…In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region…”
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    Journal Article
  10. 10

    Comprehensive Investigation of Multitraps-Induced Degradation in HfO2-Based nmosfets With Interfacial Layer by Three-Dimensional KMC Method by Li, Yun, Huang, Peng, Di, Shaoyan, Zhang, Xing, Du, Gang, Liu, Xiaoyan

    Published in IEEE transactions on nanotechnology (01-03-2018)
    “…This paper investigates trap-induced degradation in n mosfet s with HfO 2 gate dielectric by three-dimensional Kinetic Monte Carlo method. Multiple microscopic…”
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    Journal Article
  11. 11

    Simulation of nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver by Shaoyan Di, Kai Zhao, Zhiyuan Lun Tiao Lu, Gang Du, Xiaoyan Liu

    “…A nano-scale double gate In 0.53 Ga 0.47 As nMOSFET device structure is simulated by deterministically solving the time dependent Boltzmann Transport Equation…”
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    Conference Proceeding
  12. 12

    Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime by Di, Shaoyan, Shen, Lei, Chang, Pengying, Zhao, Kai, Lu, Tiao, Du, Gang, Liu, Xiaoyan

    Published in Science China. Information sciences (01-06-2019)
    “…This paper proposes a systematic procedure to calibrate the parameters of the drift-diffusion (DD) model for a performance evaluation of InGaAs MOSFETs in the…”
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    Journal Article
  13. 13

    Optical Layer Awareness Based Multicast Optimization Scheme in Software Defined Optical Networks by Zhang, Lei, Di, Shaoyan, Wang, Shujuan

    “…As the scale of software defined optical networks (SDON) was enlarged with increasing multicast service demands, communication quality suffers seriously from…”
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    Conference Proceeding