Search Results - "Shaoyan Di"
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Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs
Published in IEEE transactions on electron devices (01-11-2013)“…With the exact solution of the 2-D Poisson's equation in cylindrical coordinates, analytical subthreshold behavior models for junctionless cylindrical…”
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Journal Article -
2
Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs
Published in IEEE transactions on electron devices (01-03-2017)“…Ballistic transport in III-V semiconductors-based p-channel double-gate MOSFETs is theoretically evaluated. The valence band structure is calculated by solving…”
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Journal Article -
3
Investigation of thermal effects on FinFETs in the quasi-ballistic regime
Published in Japanese Journal of Applied Physics (01-04-2018)“…In this work, the thermal effects of FinFETs in the quasi-ballistic regime are investigated using the Monte Carlo method. Bulk Si nFinFETs with the same fin…”
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Journal Article -
4
Performance comparison of Si, III-V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver
Published in Japanese Journal of Applied Physics (01-04-2017)“…A deterministic time-dependent Boltzmann transport equation (BTE) solver is employed to carry out a comparison work among 10 nm double-gate n-type MOSFETs with…”
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Journal Article -
5
Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE
Published in Journal of computational electronics (01-09-2016)“…In this work, the transient characteristics of nanoscale field-effect transistors (FETs) have been investigated using a deterministic solver based on the…”
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Journal Article -
6
High Performance Metal-Gate/High- GaN MOSFET With Good Reliability for Both Logic and Power Applications
Published in IEEE journal of the Electron Devices Society (01-09-2016)“…The gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (μC ox ) of 335 μA/V 2 (410 mA/mm at L…”
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7
Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver
Published in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2016)“…We investigate the scattering mechanism in ultrashort double gate In 0.53 Ga 0.47 As nMOSFETs by deterministically solving Boltzmann transport equation (BTE)…”
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Conference Proceeding -
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Parameter calibration of drift-diffusion model in quasi-ballisitc transport region with Monte Carlo method
Published in 2017 Silicon Nanoelectronics Workshop (SNW) (01-06-2017)“…As the device scaling down to sub-10nm, the quasi-ballistic transport becomes important. Some previous works have suggested using DD method to involve the…”
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Conference Proceeding -
9
Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs
Published in Science China. Information sciences (01-06-2018)“…In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region…”
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Journal Article -
10
Comprehensive Investigation of Multitraps-Induced Degradation in HfO2-Based nmosfets With Interfacial Layer by Three-Dimensional KMC Method
Published in IEEE transactions on nanotechnology (01-03-2018)“…This paper investigates trap-induced degradation in n mosfet s with HfO 2 gate dielectric by three-dimensional Kinetic Monte Carlo method. Multiple microscopic…”
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Journal Article -
11
Simulation of nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01-04-2016)“…A nano-scale double gate In 0.53 Ga 0.47 As nMOSFET device structure is simulated by deterministically solving the time dependent Boltzmann Transport Equation…”
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Conference Proceeding -
12
Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime
Published in Science China. Information sciences (01-06-2019)“…This paper proposes a systematic procedure to calibrate the parameters of the drift-diffusion (DD) model for a performance evaluation of InGaAs MOSFETs in the…”
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Journal Article -
13
Optical Layer Awareness Based Multicast Optimization Scheme in Software Defined Optical Networks
Published in 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE) (01-10-2019)“…As the scale of software defined optical networks (SDON) was enlarged with increasing multicast service demands, communication quality suffers seriously from…”
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Conference Proceeding