Search Results - "Shao-Ming Yang"
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1
Histone deacetylase 3 promotes liver regeneration and liver cancer cells proliferation through signal transducer and activator of transcription 3 signaling pathway
Published in Cell death & disease (14-03-2018)“…Histone deacetylase 3 (HDAC3) plays pivotal roles in cell cycle regulation and is often aberrantly expressed in various cancers including hepatocellular…”
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2
Development and validation of an ultrasound-based nomogram to improve the diagnostic accuracy for malignant thyroid nodules
Published in European radiology (01-03-2019)“…Objectives The aim of this study was to develop an ultrasound-based nomogram to improve the diagnostic accuracy of the identification of malignant thyroid…”
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3
Decreased expression of HDAC8 indicates poor prognosis in patients with intrahepatic cholangiocarcinoma
Published in Hepatobiliary & pancreatic diseases international (01-10-2019)“…Intrahepatic cholangiocarcinoma (ICC) is a highly malignant primary tumor in the liver, and the rates of incidence and mortality are rapidly increasing…”
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4
120V Low Side LDMOS Device with Sided Isolation of 0.35μm CMOS Compatible Process
Published in MATEC web of conferences (01-01-2018)“…In this paper, a novel 120V multiple RESURF lateral double-diffused MOS (LDMOS) transistor with shallow trench isolation (STI) structure in low side is…”
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5
Analysis of Anti-JFET for 600V VDMOS and HCI Reliability
Published in MATEC web of conferences (01-01-2018)“…In VDMOS device the anti-JFET concentration has important role for determining the breakdown voltage and on-resistance of the device. Because higher N-drift…”
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6
Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models
Published in MATEC web of conferences (01-01-2018)“…In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins…”
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7
Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology
Published in MATEC web of conferences (01-01-2018)“…High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and…”
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8
Study of HCI Reliability for PLDMOS
Published in MATEC web of conferences (01-01-2018)“…In this paper, we demonstrate electrical degradation due to hot carrier injection (HCI) stress for PLDMOS device. The lower gate current and the IDsat…”
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9
ELM weighted hybrid modeling and its online modification
Published in 2016 Chinese Control and Decision Conference (CCDC) (01-05-2016)“…Extreme learning machine (ELM) is a fast online learning algorithm for single hidden layer feed-forward neural networks (SLFN), which keeps the fast learning…”
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10
Study on High-side LDMOS energy capability Improvement
Published in 2016 International Symposium on Semiconductor Manufacturing (ISSM) (01-12-2016)“…Improvement of Laterally Diffused Metal Oxide Semiconductor (LDMOS) energy capability, Unclamped inductive switching (UIS) is used to characterize ruggedness…”
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Conference Proceeding -
11
Comparison between linear and nonlinear machine-learning algorithms for the classification of thyroid nodules
Published in European journal of radiology (01-04-2019)“…•Ultrasound accuracy in the classification of thyroid nodules depends heavily on examiner experience.•Machine-learning algorithms may improve the medical…”
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12
An Analytical Model of Surface Electric Field Distributions in Ultrahigh-Voltage Buried P-Top Lateral Diffused Metal--Oxide--Semiconductor Devices
Published in Japanese Journal of Applied Physics (01-07-2010)“…In this paper, we present an analytical model for determining surface electric field distributions in buried P-top lateral-diffused metal--oxide--semiconductor…”
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13
A nomogram for individual prediction of vascular invasion in primary breast cancer
Published in European journal of radiology (01-01-2019)“…•Vascular invasion has been reported as a strong prognostic factor in patients with breast cancer.•We identified 10 clinicopathologic and radiological features…”
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14
Development of a preprocedure nomogram for predicting contrast-induced acute kidney injury after coronary angiography or percutaneous coronary intervention
Published in Oncotarget (26-09-2017)“…Most of the risk models for predicting contrast-induced acute kidney injury (CI-AKI) are available for postcontrast exposure prediction, thus have limited…”
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15
Cerium oxide nanocrystals for nonvolatile memory applications
Published in Applied physics letters (24-12-2007)“…The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by…”
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16
Effect of time and temperature on epitaxy growth
Published in 2016 China Semiconductor Technology International Conference (CSTIC) (01-03-2016)“…The growth rate of epitaxy depends primarily on parameters such as source gas deposition temperature pressure and concentration. Most microelectronic circuits…”
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Conference Proceeding -
17
Rapid Detection of Five Common Fatty Acids in Industrial Oleic Acid Based on Ultra Performance Convergence Chromatography-Mass Spectrometry
Published in Fēnxī huàxué (01-01-2015)“…A rapid method was developed for the determination of 5 common fatty acids, palmitic acid, stearic acid, oleic acid, linoleic acid and linolenic acid in…”
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18
Gate Engineering in SOI LDMOS for Device Reliability
Published in MATEC web of conferences (01-01-2016)“…A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF) SOI LDMOS transistor performance has…”
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19
DNA Biosensor Applications for Poly-Silicon Nanowire Field-Effect Transistors
Published in 2016 IEEE 16th International Conference on Bioinformatics and Bioengineering (BIBE) (01-10-2016)“…In this paper, a normal nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary…”
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Conference Proceeding -
20
Investigation in characteristics of 1200V vertical IGBT for different trench designs
Published in 2013 IEEE International Conference of Electron Devices and Solid-state Circuits (01-06-2013)“…In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field stop (FS) IGBT at various temperatures for different trench widths and…”
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Conference Proceeding