Search Results - "Shao, Xing Long"

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure by Wei Zhou, Li, Long Shao, Xing, Yuan Li, Xiang, Jiang, Hao, Chen, Ran, Jean Yoon, Kyung, Jin Kim, Hae, Zhang, Kailiang, Zhao, Jinshi, Seong Hwang, Cheol

“…Reliability and uniformity in resistance switching behaviours in top electrode Cu-sputtered TiO2-bottom electrode Pt memory structure were greatly improved by…”
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Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures by Jiang, Hao, Li, Xiang Yuan, Chen, Ran, Shao, Xing Long, Yoon, Jung Ho, Hu, Xiwen, Hwang, Cheol Seong, Zhao, Jinshi

“…SiO 2 is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access…”
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Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area by Yoon, Jung Ho, Yoo, Sijung, Song, Seul Ji, Yoon, Kyung Jean, Kwon, Dae Eun, Kwon, Young Jae, Park, Tae Hyung, Kim, Hye Jin, Shao, Xing Long, Kim, Yumin, Hwang, Cheol Seong

“…To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array…”
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Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device by Kim, Hae Jin, Yoon, Kyung Jean, Park, Tae Hyung, Kim, Han Joon, Kwon, Young Jae, Shao, Xing Long, Kwon, Dae Eun, Kim, Yu Min, Hwang, Cheol Seong

“…The electrochemical metallization (ECM) cell is a feasible contender for high density resistance switching random access memory or neuromorphic devices. This…”
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Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta 2 O 5 /HfO 2– x Structure with a Sub-μm 2 Cell Area by Yoon, Jung Ho, Yoo, Sijung, Song, Seul Ji, Yoon, Kyung Jean, Kwon, Dae Eun, Kwon, Young Jae, Park, Tae Hyung, Kim, Hye Jin, Shao, Xing Long, Kim, Yumin, Hwang, Cheol Seong

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Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO 2 /Cu Electrochemical Metallization Device by Kim, Hae Jin, Yoon, Kyung Jean, Park, Tae Hyung, Kim, Han Joon, Kwon, Young Jae, Shao, Xing Long, Kwon, Dae Eun, Kim, Yu Min, Hwang, Cheol Seong

“…The electrochemical metallization (ECM) cell is a feasible contender for high density resistance switching random access memory or neuromorphic devices. This…”
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Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area by Yoon, Jung Ho, Yoo, Sijung, Song, Seul Ji, Yoon, Kyung Jean, Kwon, Dae Eun, Kwon, Young Jae, Park, Tae Hyung, Kim, Hye Jin, Shao, Xing Long, Kim, Yumin, Hwang, Cheol Seong

“…To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array…”
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The Use of CT Perfusion to Determine Microvessel Density in Lung Cancer： Comparison with FDG-PET and Pathology by Xing, Ning, Cai, Zu-long, Zhao, Shao-hong, Yang, Li, Xu, Bai-xuan, Wang, Fu-lin

“…Objective： To investigate the validity of CT perfusion in assessing angiogenic activity of lung cancer. Methods： Fifty-six patients with lung cancer scheduled…”
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绿色地质勘查施工现场管理措施及技术经济评价:以四川某锂矿勘探项目为例 by 杨元良, 陈慕天, 郭建强, 岳大斌, 宋祥峰, 廖兴健, 陈加中, 王章翔, 邵兴隆, 许国明

“…P631;…”
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