Search Results - "Shao, Xianzhou"

Improvement of Memory Window of Silicon Channel Hf } Zr } O } FeFET by Inserting Al } O } /HfO } /Al } O } Top Interlayer by Han, Runhao, Hu, Tao, Yang, Jia, Bai, Mingkai, Ding, Yajing, Shao, Xianzhou, Dai, Saifei, Sun, Xiaoqing, Chai, Junshuai, Xu, Hao, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf<inline-formula> <tex-math…”
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Effect of Nitridation of Bottom Interlayer in FeFETs With the TiN/Al } O } /Hf } Zr } O } /Bottom Interlayer/Si Substrate Structure by Yang, Jia, Han, Runhao, Hu, Tao, Dai, Saifei, Shao, Xianzhou, Sun, Xiaoqing, Chai, Junshuai, Xu, Hao, Han, Kai, Wang, Yanrong, Zhang, Jing, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…In this work, we investigate the effect of nitridation of the bottom interlayer in HfO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math>…”
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Switching Dynamics of HfO2-ZrO2 Nanolaminates With Different Laminate Thicknesses by Ke, Xiaoyu, Chai, Junshuai, Shao, Xianzhou, Duan, Jiahui, Sun, Xiaoqing, Yang, Shuai, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

“…In this work, the switching dynamics of HfO2-ZrO2 nanolaminate ferroelectric (FE) films with different laminate thicknesses are investigated. Metal/FE…”
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Switching Dynamics of HfO 2 –ZrO 2 Nanolaminates With Different Laminate Thicknesses by Ke, Xiaoyu, Chai, Junshuai, Shao, Xianzhou, Duan, Jiahui, Sun, Xiaoqing, Yang, Shuai, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

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Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2 by Jia, Xinpei, Chai, Junshuai, Duan, Jiahui, Sun, Xiaoqing, Shao, Xianzhou, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

“…We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with ferroelectric Hf0.5Zr0.5O2/SiO2 gate stacks by…”
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Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2 by Jia, Xinpei, Chai, Junshuai, Duan, Jiahui, Sun, Xiaoqing, Shao, Xianzhou, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

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Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure by Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/…”
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Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf } Zr } O } /SiO } /Si Gate-Stacks by Shao, Xianzhou, Chai, Junshuai, Tian, Fengbin, Ke, Xiaoyu, Liao, Min, Dai, Saifei, Fan, Hongyang, Sun, Xiaoqing, Xu, Hao, Han, Kai, Xiang, Jinjuan, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu, Ye, Tianchun

“…We investigate the physical origins of endurance fatigue in silicon channel-based ferroelectric field-effect transistor (Si FeFETs) with TiN/Hf<inline-formula>…”
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Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement by Shao, Xianzhou, Chai, Junshuai, Tian, Fengbin, Zhao, Shujing, Duan, Jiahui, Ke, Xiaoyu, Sun, Xiaoqing, Jinjuan Xiang, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu, Ye, Tianchun

“…We propose an in situ [Formula Omitted] measurement method to investigate the endurance fatigue mechanism of Si ferroelectric field-effect transistor (FeFET)…”
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Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ V th Measurement by Shao, Xianzhou, Chai, Junshuai, Tian, Fengbin, Zhao, Shujing, Duan, Jiahui, Ke, Xiaoyu, Sun, Xiaoqing, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu, Ye, Tianchun

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Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ \textit} Measurement by Shao, Xianzhou, Chai, Junshuai, Tian, Fengbin, Zhao, Shujing, Duan, Jiahui, Ke, Xiaoyu, Sun, Xiaoqing, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu, Ye, Tianchun

“…We propose an in situ <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{th}}</tex-math> </inline-formula> measurement method to investigate the…”
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Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure by Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with…”
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Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy by Shao, Xianzhou, Chai, Junshuai, Liao, Min, Duan, Jiahui, Tian, Fengbin, Ke, Xiaoyu, Sun, Xiaoqing, Xu, Hao, Xiang, Jinjuan, Wang, Xiaolei, Wang, Wenwu

“…The endurance degradation mechanism in Si FeFET has attracted great research interest. However, the reports mainly focused on large-scale devices, owing to the…”
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Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure by Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory…”
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