Search Results - "Shang-Fu Yeh"
-
1
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor
Published in Sensors (Basel, Switzerland) (01-09-2023)“…In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under…”
Get full text
Journal Article -
2
Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors
Published in Sensors (Basel, Switzerland) (10-12-2019)“…In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their…”
Get full text
Journal Article -
3
Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method
Published in Sensors (Basel, Switzerland) (23-11-2017)“…A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology…”
Get full text
Journal Article -
4
A Linear-Logarithmic CMOS Image Sensor With Pixel-FPN Reduction and Tunable Response Curve
Published in IEEE sensors journal (01-05-2014)“…This paper presents a high dynamic range (DR) linear-logarithmic (Lin-Log) CMOS image sensor (CIS) pixel with threshold voltage cancellation technique for…”
Get full text
Journal Article -
5
Novel Single-Slope ADC Design for Full Well Capacity Expansion of CMOS Image Sensor
Published in IEEE sensors journal (01-03-2013)“…This paper proposes a novel single-slope (SS) ADC design and operation for full well capacity (FWC) expansion of CMOS image sensor to increase the dynamic…”
Get full text
Journal Article -
6
Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process
Published in IEEE journal of the Electron Devices Society (2021)“…It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used…”
Get full text
Journal Article -
7
Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation
Published in IEEE journal of the Electron Devices Society (2019)“…The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M…”
Get full text
Journal Article -
8
CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling
Published in IEEE journal of the Electron Devices Society (01-01-2017)“…A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image…”
Get full text
Journal Article -
9
A Dual-Exposure Single-Capture Wide Dynamic Range CMOS Image Sensor With Columnwise Highly/Lowly Illuminated Pixel Detection
Published in IEEE transactions on electron devices (01-07-2012)“…This paper proposes a dual-exposure single-capture wide dynamic-range (DR) CMOS image sensor (CIS) for optical identification systems. The proposed sensor…”
Get full text
Journal Article -
10
A 1.1μm-Pitch 13.5Mpixel 3D-stacked CMOS image sensor featuring 230fps full-high-definition and 514fps high-definition videos by reading 2 or 3 rows simultaneously using a column-switching matrix
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…Slow-motion video is a desirable feature for state-of-art smartphones. The effect is achieved by capturing a video at a higher frame rate and playing it back…”
Get full text
Conference Proceeding -
11
A 0.66erms− Temporal-Readout-Noise 3-D-Stacked CMOS Image Sensor With Conditional Correlated Multiple Sampling Technique
Published in IEEE journal of solid-state circuits (01-02-2018)“…This paper presents a sub-electron temporal readout noise, 8.3 Mpixel and 1.1-μ pixel pitch 3-D-stacked CMOS image sensor (CIS). A conditional correlated…”
Get full text
Journal Article -
12
A novel single slope ADC design for wide dynamic range CMOS image sensors
Published in 2011 IEEE SENSORS Proceedings (01-10-2011)“…This paper presents a novel single slope ADC design for dual-exposure wide dynamic range CMOS image sensor (CIS). The proposed design achieves column-wise…”
Get full text
Conference Proceeding -
13
A new CMOS image sensor readout structure for 3D integrated imagers
Published in 2011 IEEE Custom Integrated Circuits Conference (CICC) (01-09-2011)“…This paper presents a new CMOS image sensor (CIS) structure and ADC design for three-dimensional (3D) integrated imagers. A modular design of CIS sub-array is…”
Get full text
Conference Proceeding -
14
A 3 Megapixel 100 Fps 2.8 μm Pixel Pitch CMOS Image Sensor Layer With Built-in Self-Test for 3D Integrated Imagers
Published in IEEE journal of solid-state circuits (01-03-2013)Get full text
Journal Article -
15
A 143dB 1.96% FPN linear-logarithmic CMOS image sensor with threshold-voltage cancellation and tunable linear range
Published in 2012 IEEE Sensors (01-10-2012)“…This paper presents a high dynamic range (DR) linear-logarithmic (Lin-Log) CMOS image sensor (CIS) pixel with on-chip tunable linear range and threshold…”
Get full text
Conference Proceeding -
16
An image lag free CMOS image sensor with Constant-Residue Reset
Published in Proceedings of 2011 International Symposium on VLSI Design, Automation and Test (01-04-2011)“…A lag-free CMOS image sensor (CIS) with Constant-Residue Reset (CRR) operation is presented in this paper. It effectively eliminates image lag effect caused by…”
Get full text
Conference Proceeding -
17
Live demonstration: The prototype of real-time image pre-processing system for satellites' remote sensing
Published in 2011 IEEE International Symposium of Circuits and Systems (ISCAS) (01-05-2011)“…High resolution image combination and processing plays an important role in today's satellites' remote sensing applications. This paper presents an image…”
Get full text
Conference Proceeding -
18
A 0.66e rms − Temporal-Readout-Noise 3-D-Stacked CMOS Image Sensor With Conditional Correlated Multiple Sampling Technique
Published in IEEE journal of solid-state circuits (01-02-2018)Get full text
Journal Article -
19
A 3 Megapixel 100 Fps 2.8 \mum Pixel Pitch CMOS Image Sensor Layer With Built-in Self-Test for 3D Integrated Imagers
Published in IEEE journal of solid-state circuits (01-03-2013)“…This paper presents a 3 megapixel 100 fps 2.8 μm pixel pitch CMOS image sensor (CIS) layer with built-in self-test (BIST) for three-dimensional (3D) integrated…”
Get full text
Journal Article -
20
A 0.66e−rms temporal-readout-noise 3D-stacked CMOS image sensor with conditional correlated multiple sampling (CCMS) technique
Published in 2015 Symposium on VLSI Circuits (VLSI Circuits) (01-06-2015)“…A conditional correlated multiple sampling (CCMS) technique for low noise CMOS image sensor (CIS) is proposed to reduce noise and address low frame rate issue…”
Get full text
Conference Proceeding