Porous SiO2 antireflection film with high UV resistance
Sol-gel is one of the most economical methods to prepare antireflection films, but the low ultraviolet radiation-resistance (UV-resistance) of the sol-gel film limits its applicability in the solar industry. A SiO2 antireflection film was prepared with sol-gel method with phenyl salicylate (PS) as t...
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| Published in: | Optical materials Vol. 153; p. 115603 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
01-07-2024
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | Sol-gel is one of the most economical methods to prepare antireflection films, but the low ultraviolet radiation-resistance (UV-resistance) of the sol-gel film limits its applicability in the solar industry. A SiO2 antireflection film was prepared with sol-gel method with phenyl salicylate (PS) as the porogen. The effects of the PS addition were investigated on the microstructure, optical property and UV-resistance of the film. When the addition of PS is 1.20 g, the refractive index at 550 nm is 1.30, and the maximum transmittance is 96.30 %. The average transmittance within the 400–1100 nm range reaches its peak at 92.85 %, which is 4.35 percentage points higher than that of the blank glass. In addition, the film without PS has an average transmittance of 91.00 % after 5000 equivalent solar hours (ESHs) UV irradiation, decreasing 1.07 percent point, and has a pencil hardness of 5 H and an adhesion of grade 2 of the tape-tearing method. However, the film with 1.20 g of PS still has an average transmittance of 92.15 % after 5000 ESHs UV irradiation, decreasing only 0.7 percent point, and has a pencil hardness of 7 H and an adhesion of grade 1 of the tape-tearing method.
Effect of PS addition amount on the change of SiO2 film average transmittance with the UV irradiation time. [Display omitted]
•SiO2 film with high transmittance and high UV resistance was prepared with sol-gel.•PS increased the film's average transmittance within 400–1100 nm 4.35 %.•PS let film's average transmittance drop after 5000 ESHs UV irradiation only 0.7 %.•PS made film have 8H hardness and grade 1 adhesion after 5000 ESHs UV irradiation.•PS endowed SiO2 film with an excellent UV resistance performance. |
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| ISSN: | 0925-3467 1873-1252 |
| DOI: | 10.1016/j.optmat.2024.115603 |