Search Results - "Shakin, I.A"

Free and bound exciton emission in CuInSe2 and CuGaSe2 single crystals by MUDRYI, A. V, BODNAR, I. V, GREMENOK, V. F, VICTOROV, I. A, PATUK, A. I, SHAKIN, I. A

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Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations by Mudryi, A.V, Patuk, A.I, Shakin, I.A, Ulyashin, A.G, Job, R, Fahrner, W.R, Fedotov, A, Mazanik, A, Drozdov, N

“…The low-temperature photoluminescence (PL) measurements (down to 4.2 K) were employed for the investigations of the defects and impurities in multicrystalline…”
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Optical spectroscopy of chalcopyrite compounds CuInS 2, CuInSe 2 and their solid solutions by Mudryi, A.V., Victorov, I.A., Gremenok, V.F., Patuk, A.I., Shakin, I.A., Yakushev, M.V.

“…Photoluminescence (PL) and optical absorption (OA) measurements have been used to study CuInS 2 x Se 2(1− x) alloy at temperatures down to 4.2 K for x from 0…”
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Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions by Mudryi, A.V., Victorov, I.A., Gremenok, V.F., Patuk, A.I., Shakin, I.A., Yakushev, M.V.

“…Photoluminescence (PL) and optical absorption (OA) measurements have been used to study CuInS2xSe2(1-x) alloy at temperatures down to 4.2 K for x from 0 to 1…”
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Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing by Mudryi, A.V., Korshunov, F.P., Patuk, A.I., Shakin, I.A., Larionova, T.P., Ulyashin, A.G., Job, R., Fahrner, W.R., Emtsev, V.V., Davydov, V.Yu, Oganesyan, G.

“…The systematical low-temperature (4.2 K) photoluminescence (PL) study of the formation kinetics of optically active centers in H and He implanted CZ Si,…”
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Free and bound exciton emission in CuInSe 2 and CuGaSe 2 single crystals by Mudryi, A.V, Bodnar, I.V, Gremenok, V.F, Victorov, I.A, Patuk, A.I, Shakin, I.A

“…The free-exciton series with n=1,2 in high perfect CuInSe 2 and CuGaSe 2 single crystals have been observed in photoluminescence. The exciton binding energy…”
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Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon by Ulyashin, A.G., Job, R., Fahrner, W.R., Mudryi, A.V., Patuk, A.I., Shakin, I.A.

“…Hydrogen- and helium-implanted Czochralski (Cz) silicon was investigated by low-temperature photoluminescence (PL) measurements after post-implantation…”
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Optical properties of A IIB V semiconductor compounds by Mudryi, A.V., Patuk, A.I., Shakin, I.A., Kalmykov, A.E., Marenkin, S.F., Raukhman, A.M.

“…The luminescence and transmission spectra of single crystals of the semiconductor compounds ZnAs 2, Zn 3As 2, and CdAs 2 in the wide temperature range of…”
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Optical properties of AIIBV semiconductor compounds by MUDRYI, A. V, PATUK, A. I, SHAKIN, I. A, KALMYKOV, A. E, MARENKIN, S. F, RAUKHMAN, A. M

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A luminescence study of defects and internal strains in ion-implanted silicon on sapphire films by Mudryi, A.V., Patuk, A.I., Shakin, I.A., Korshunov, F.P., Zuev, V.A.

“…Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions)…”
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