Search Results - "Shahriar Rahman, M."

Device-Level Vacuum Packaging for RF MEMS by Shahriar Rahman, M, Chitteboyina, M M, Butler, D P, Çelik-Butler, Z, Pacheco, S P, McBean, R V

“…For specific RF applications, where the use of MEMS is highly attractive, cost-effective reliable packaging is one of the primary barriers to…”
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Improved interface quality and charge-trapping characteristics of MOSFETs with high-κ gate dielectric by PARK, Hokyung, SHAHRIAR RAHMAN, M, CHANG, Man, BYOUNG HUN LEE, CHOI, Rino, YOUNG, Chadwin D, HWANG, Hyunsang

“…The effects of high-pressure annealing on interface properties and charge trapping of nMOSFET with high- Kappa dielectric were investigated. Comparing with…”
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Trap Density Modulation for IO FinFET NBTI Improvement by Ranjan, Rakesh, LaRow, Charles B., Lee, Ki-Don, Kang, Minhyo, Perepa, Pavitra R., Rahman, M. Shahriar, Lee, Bong Ki, Moreau, David, Cariss-Daniels, Carolyn, Basford, Timothy, Callahan, Colby, Nguyen, Maihan, Choi, Gil Heyun, Sagong, Hyunchul, Rhee, HwaSung

“…Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High…”
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An iterative ZigZag decoding for combating collisions in wireless networks by Shahriar Rahman, M., Yonghui Li, Vucetic, B.

“…Business and entertainment increasingly depend on WLANs, as they provide flexibility of locations and low maintenance efforts. However in the presence of…”
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A new model for 1/f noise in high-κ MOSFETs by Morshed, T., Devireddy, S.P., Rahman, M.S., Celik-Butler, Z., Hsing-Huang Tseng, Zlotnicka, A., Shanware, A., Green, K., Chambers, J.J., Visokay, M.R., Quevedo-Lopez, M.A., Colombo, L.

“…A new 1/f noise model based on correlated number-mobility fluctuations theory is proposed to account for the low frequency noise in MOSFETs with multi-layered…”
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Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- k Dielectric MOSFETs by Rahman, M.S., Morshed, T.H., Celik-Butler, Z., Quevedo-Lopez, M.A., Shanware, A., Colombo, L.

“…Understanding and minimization of low-frequency noise (LFN) originating from high- k (HK) gate dielectrics in new generation MOSFETs are of critical importance…”
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