Search Results - "Shafarman, W.N."

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  1. 1

    Effect of Rapid Thermal Processing on the structural and device properties of (Ag,Cu)(In,Ga)Se2 thin film solar cells by Simchi, H., McCandless, B.E., Kim, K., Boyle, J.H., Shafarman, W.N.

    Published in Thin solid films (15-05-2013)
    “…(AgwCu1−w)(In1−xGax)Se2 alloy absorber layers with w≈0.8 and x≈0.78 ratios were deposited using multi-source elemental evaporation and analyzed by glancing…”
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    Journal Article Conference Proceeding
  2. 2

    pin double-heterojunction thin-film solar cell p-layer assessment by Spies, J.A., Schafer, R., Wager, J.F., Hersh, P., Platt, H.A.S., Keszler, D.A., Schneider, G., Kykyneshi, R., Tate, J., Liu, X., Compaan, A.D., Shafarman, W.N.

    Published in Solar energy materials and solar cells (01-08-2009)
    “…The simplest realization of a pin double-heterojunction thin-film solar cell would consist of a lightly doped, moderate-bandgap absorber i-layer; a heavily…”
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    Journal Article
  3. 3

    First quadrant phototransistor behavior in CuInSe2 photovoltaics by Rockett, A., van Duren, J.K.J., Pudov, A., Shafarman, W.N.

    Published in Solar energy materials and solar cells (01-11-2013)
    “…Temperature-dependent current voltage measurements on a CuInSe2 (CIS) solar cell are described and analyzed in detail. At relatively low temperatures, the…”
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    Journal Article
  4. 4

    Distinguishing metastable changes in bulk CIGS defect densities from interface effects by Heath, J.T., Cohen, J.D., Shafarman, W.N.

    Published in Thin solid films (01-05-2003)
    “…The deep defect distributions affecting majority carrier trapping in polycrystalline CuIn 1− x Ga x Se 2 (CIGS) have been studied using drive level capacitance…”
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    Journal Article
  5. 5

    Structural, optical, and surface properties of WO3 thin films for solar cells by Simchi, H., McCandless, B.E., Meng, T., Shafarman, W.N.

    Published in Journal of alloys and compounds (25-12-2014)
    “…•WO3 films were deposited by RF reactive sputtering, and annealed in different temperatures.•As deposited films were amorphous while >400°C annealed films were…”
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    Journal Article
  6. 6

    Losses in CuInSe/sub 2/-based thin film monolithic tandem solar cells by Shafarman, W.N., Paulson, P.D.

    “…Two critical aspects for the development of tandem solar cells using CuInSe/sub 2/-alloy materials are addressed. First a structure for monolithic tandem solar…”
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    Conference Proceeding
  7. 7

    Thin-film solar cells: device measurements and analysis by Hegedus, Steven S., Shafarman, William N.

    Published in Progress in photovoltaics (01-03-2004)
    “…Characterization of amorphous Si, CdTe, and Cu(InGa)Se2‐based thin‐film solar cells is described with focus on the deviations in device behavior from standard…”
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    Journal Article
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    Structural characterization of the (AgCu)(InGa)Se 2 thin film alloy system for solar cells by Boyle, J.H., McCandless, B.E., Hanket, G.M., Shafarman, W.N.

    Published in Thin solid films (31-08-2011)
    “…A detailed structural analysis of the (AgCu)(InGa)Se 2 thin film alloy system was undertaken via X-ray diffraction in order to determine its phase behavior and…”
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    Journal Article
  10. 10

    Structural characterization of the (AgCu)(InGa)Se2 thin film alloy system for solar cells by BOYLE, J. H, MCCANDLESS, B. E, HANKET, G. M, SHAFARMAN, W. N

    Published in Thin solid films (31-08-2011)
    “…A detailed structural analysis of the (AgCu)(InGa)Se2 thin film alloy system was undertaken via X-ray diffraction in order to determine its phase behavior and…”
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    Conference Proceeding Journal Article
  11. 11

    High efficiency CIGS and CIS cells with CVD ZnO buffer layers by Olsen, L.C., Wenhua Lei, Addis, F.W., Shafarman, W.N., Contreras, M.A., Ramanathan, K.

    “…This paper describes investigations of CIS and CIGS solar cells with ZnO buffer layers. These studies are a result of a team effort between investigators at…”
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    Conference Proceeding
  12. 12

    New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds by Barreau, N., Bernède, J.C., Marsillac, S., Amory, C., Shafarman, W.N.

    Published in Thin solid films (01-05-2003)
    “…In2S3 containing sodium (BINS) thin films can be grown on glass substrates heated at 200 C. The films have a n-type electrical conductivity and their optical…”
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    Journal Article
  13. 13

    Surface sulfurization studies of Cu(InGa)Se2 thin film by SINGH, Udai P, SHAFARMAN, William N, BIRKMIRE, Robert W

    Published in Solar energy materials and solar cells (01-03-2006)
    “…Sulfurization of copper indium gallium diselenide (CIGS) thin films solar cell absorber has been used to enhance the open-circuit voltage of the device by…”
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    Journal Article
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    Characterization and device performance of (AgCu)(InGa)Se2 absorber layers by Hanket, G.M., Boyle, J.H., Shafarman, W.N.

    “…The study of (AgCu)(InGa)Se 2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu…”
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    Conference Proceeding
  17. 17

    In-situ post-deposition thermal annealing of co-evaporated Cu(InGa)Se2 thin films deposited at low temperatures by Wilson, J.D., McCandless, B.E., Birkmire, R.W., Shafarman, W.N.

    “…The effects of deposition temperature and in-situ post-deposition annealing on the microstructure of co-evaporated Cu(InGa)Se 2 thin films and on the…”
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    Conference Proceeding
  18. 18

    Near-surface defect distributions in Cu(In,Ga)Se2 by Rockett, A., Liao, D., Heath, J.T., Cohen, J.D., Strzhemechny, Y.M., Brillson, L.J., Ramanathan, K., Shafarman, W.N.

    Published in Thin solid films (01-05-2003)
    “…Authors overview recent results on surface chemistry, transient photocapacitance spectroscopy (TPC) and depth-resolved cathodoluminescence (CL) for…”
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    Journal Article
  19. 19

    Near-surface defect distributions in Cu(In,Ga)Se 2 by Rockett, A., Liao, D., Heath, J.T., Cohen, J.D., Strzhemechny, Y.M., Brillson, L.J., Ramanathan, K., Shafarman, W.N.

    Published in Thin solid films (01-05-2003)
    “…The density and distribution of point defects in Cu(In,Ga)Se 2 (CIGS) layers used for solar cell applications is critical to the resulting device performance…”
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    Journal Article
  20. 20

    New Cd-free buffer layer deposited by PVD: In 2S 3 containing Na compounds by Barreau, N., Bernède, J.C., Marsillac, S., Amory, C., Shafarman, W.N.

    Published in Thin solid films (2003)
    “…In this paper it is first shown that In 2S 3 containing sodium (BINS) thin films can be grown on glass substrates heated at 200 °C. The films have a n-type…”
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    Journal Article