Search Results - "Shafarman, W. N."

Backwall superstrate configuration for ultrathin Cu(In,Ga)Se2 solar cells by Larsen, J. K., Simchi, H., Xin, P., Kim, K., Shafarman, W. N.

“…A backwall superstrate device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices for thin absorbers is demonstrated. The backwall structure…”
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Structural characterization of the (AgCu)(InGa)Se2 thin film alloy system for solar cells by BOYLE, J. H, MCCANDLESS, B. E, HANKET, G. M, SHAFARMAN, W. N

“…A detailed structural analysis of the (AgCu)(InGa)Se2 thin film alloy system was undertaken via X-ray diffraction in order to determine its phase behavior and…”
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First quadrant phototransistor behavior in CuInSe2 photovoltaics by Rockett, A., van Duren, J.K.J., Pudov, A., Shafarman, W.N.

“…Temperature-dependent current voltage measurements on a CuInSe2 (CIS) solar cell are described and analyzed in detail. At relatively low temperatures, the…”
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Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices by Heath, J. T., Cohen, J. D., Shafarman, W. N., Liao, D. X., Rockett, A. A.

“…Defects in the band gap of CuIn1−xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from…”
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Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells by Repins, I. L., Stanbery, B. J., Young, D. L., Li, S. S., Metzger, W. K., Perkins, C. L., Shafarman, W. N., Beck, M. E., Chen, L., Kapur, V. K., Tarrant, D., Gonzalez, M. D., Jensen, D. G., Anderson, T. J., Wang, X., Kerr, L. L., Keyes, B., Asher, S., Delahoy, A., Von Roedern, B.

“…We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS)…”
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Structural, optical, and surface properties of WO3 thin films for solar cells by Simchi, H., McCandless, B.E., Meng, T., Shafarman, W.N.

“…•WO3 films were deposited by RF reactive sputtering, and annealed in different temperatures.•As deposited films were amorphous while >400°C annealed films were…”
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Determination of activation barriers for the diffusion of sodium through CIGS thin-film solar cells by Zellner, M. B., Birkmire, R. W., Eser, E., Shafarman, W. N., Chen, J. G.

“…We have determined the activation energies of sodium diffusion from the soda‐lime glass substrate through the Mo back‐contact layer, as well as through copper…”
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New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds by Barreau, N., Bernède, J.C., Marsillac, S., Amory, C., Shafarman, W.N.

“…In2S3 containing sodium (BINS) thin films can be grown on glass substrates heated at 200 C. The films have a n-type electrical conductivity and their optical…”
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Distinguishing metastable changes in bulk CIGS defect densities from interface effects by Heath, J.T., Cohen, J.D., Shafarman, W.N.

“…The deep defect distributions affecting majority carrier trapping in polycrystalline CuIn 1− x Ga x Se 2 (CIGS) have been studied using drive level capacitance…”
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Effect of Rapid Thermal Processing on the structural and device properties of (Ag,Cu)(In,Ga)Se2 thin film solar cells by Simchi, H., McCandless, B.E., Kim, K., Boyle, J.H., Shafarman, W.N.

“…(AgwCu1−w)(In1−xGax)Se2 alloy absorber layers with w≈0.8 and x≈0.78 ratios were deposited using multi-source elemental evaporation and analyzed by glancing…”
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Depth-resolved band gap in Cu ( In , Ga ) ( S , Se ) 2 thin films by Bär, M., Nishiwaki, S., Weinhardt, L., Pookpanratana, S., Fuchs, O., Blum, M., Yang, W., Denlinger, J. D., Shafarman, W. N., Heske, C.

“…The surface composition of Cu ( In , Ga ) ( S , Se ) 2 ("CIGSSe") thin films intrinsically deviates from the corresponding bulk composition, which also…”
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High-efficiency solar cells based on Cu(InAl)Se2 thin films by Marsillac, S., Paulson, P. D., Haimbodi, M. W., Birkmire, R. W., Shafarman, W. N.

“…A Cu(InAl)Se2 solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2 thin film deposited by four-source elemental evaporation and a device…”
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Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells by Bär, M., Nishiwaki, S., Weinhardt, L., Pookpanratana, S., Shafarman, W. N., Heske, C.

“…We have investigated the electronic structure of the absorber/back contact interface for S-free [ Cu ( In , Ga ) Se 2 ("CIGSe")] and S-containing [ Cu ( In ,…”
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Study of Cd-free buffer layers using Inx(OH, S)y on CIGS solar cells by HUANG, C. H, LI, Sheng S, HOLLOWAY, P. H, SHAFARMAN, W. N, CHANG, C.-H, LAMBERS, E. S, RIETH, L, JOHNSON, J. W, KIM, S, STANBERY, B. J, ANDERSON, T. J

“…The alternative buffer layer material Inx(OH,S)y was deposited on Cu(In,Ga)Se2 (CIGS) thin films by chemical-bath-deposition (CBD). The impurities in…”
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Transparent Back Contacts for Superstrate (Ag,Cu)(In,Ga)Se Thin Film Solar Cells by Simchi, H., Larsen, J. K., Shafarman, W. N.

“…Molybdenum oxide (MoO 3 ) and tungsten oxide (WO 3 ) are considered as transparent back contacts for (Ag,Cu)(In,Ga)Se 2 thin film solar cells. MoO 3 and WO 3…”
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pin double-heterojunction thin-film solar cell p-layer assessment by Spies, J.A., Schafer, R., Wager, J.F., Hersh, P., Platt, H.A.S., Keszler, D.A., Schneider, G., Kykyneshi, R., Tate, J., Liu, X., Compaan, A.D., Shafarman, W.N.

“…The simplest realization of a pin double-heterojunction thin-film solar cell would consist of a lightly doped, moderate-bandgap absorber i-layer; a heavily…”
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The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements by Lee, JinWoo, Cohen, J. David, Shafarman, William N.

“…We apply a new method to deduce the hole carrier mobilities of Cu(InGa)Se 2 (CIGS) polycrystalline films that have been incorporated into working solar cell…”
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Soft X-rays shedding light on thin-film solar cell surfaces and interfaces by Bär, M., Pookpanratana, S., Weinhardt, L., Wilks, R.G., Schubert, B.A., Marsen, B., Unold, T., Blum, M., Krause, S., Zhang, Y., Ranasinghe, A., Ramanathan, K., Repins, I., Contreras, M.A., Nishiwaki, S., Liu, X., Paudel, N.R., Fuchs, O., Niesen, T.P., Yang, W., Karg, F., Compaan, A.D., Shafarman, W.N., Noufi, R., Schock, H.-W., Heske, C.

“…► S/Se gradient-driven chemical interaction at the CdS/CIG(S)Se interface. ► Depth-dependent band gap in chalcopyrites. ► Band alignment at the CdS/Cu2ZnSnS4…”
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An Investigation of the Surface Properties of (Ag,Cu)(In,Ga)Se Thin Films by Simchi, H., McCandless, B. E., Kim, K., Boyle, J. H., Birkmire, R. W., Shafarman, W. N.

“…(Ag,Cu)(In,Ga)Se 2 alloy absorber layers with various Ga/(Ga+In) and Ag/(Ag+Cu) ratios were deposited using multisource elemental evaporation and analyzed by…”
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Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere by Marudachalam, M., Hichri, H., Klenk, R., Birkmire, R. W., Shafarman, W. N., Schultz, J. M.

“…Homogeneous single phase Cu(InGa)Se2 films with Ga/(In+Ga)=0.25–0.75 were formed by reacting Cu–Ga–In precursor films in H2Se followed by an anneal in Ar…”
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