Search Results - "Shabanpour, Reza"

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  1. 1

    A Compact a-IGZO TFT Model Based on MOSFET SPICE =3 Template for Analog/RF Circuit Designs by Perumal, Charles, Ishida, Koichi, Shabanpour, Reza, Boroujeni, Bahman Kheradmand, Petti, Luisa, Munzenrieder, Niko S., Salvatore, Giovanni Antonio, Carta, Corrado, Troster, Gerhard, Ellinger, Frank

    Published in IEEE electron device letters (01-11-2013)
    “…This letter presents a compact model for flexible analog/RF circuits design with amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). The model is…”
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    Journal Article
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    Comparative Evaluation of Fracture Resistance and Mode of Failure of Zirconia and Titanium Abutments with Different Diameters by Shabanpour, Reza, Mousavi, Niloufar, Ghodsi, Safoura, Alikhasi, Marzieh

    “…The purpose of the current study was to compare the fracture resistance and mode of failure of zirconia and titanium abutments with different diameters…”
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    Journal Article
  5. 5

    Analog Characteristics of Fully Printed Flexible Organic Transistors Fabricated With Low-Cost Mass-Printing Techniques by Kheradmand-Boroujeni, Bahman, Schmidt, Georg Cornelius, Hoft, Daniel, Shabanpour, Reza, Perumal, Charles, Meister, Tilo, Ishida, Koichi, Carta, Corrado, Hubler, Arved C., Ellinger, Frank

    Published in IEEE transactions on electron devices (01-05-2014)
    “…Fully printed organic field effect transistors (OFETs) are fabricated on a flexible, 100-μm-thick, polyethylene terephthalate substrate using high-throughput…”
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    Journal Article
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    Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors by Kheradmand-Boroujeni, Bahman, Schmidt, Georg C., Höft, Daniel, Haase, Katherina, Bellmann, Maxi, Ishida, Koichi, Shabanpour, Reza, Meister, Tilo, Carta, Corrado, Hübler, Arved C., Ellinger, Frank

    Published in Organic electronics (01-07-2016)
    “…All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic…”
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    Journal Article
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    20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT by Meister, Tilo, Ishida, Koichi, Shabanpour, Reza, Boroujeni, Bahman K., Carta, Corrado, Munzenrieder, Niko, Petti, Luisa, Cantarella, Giuseppe, Salvatore, Giovanni A., Troster, Gerhard, Ellinger, Frank

    “…This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active…”
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    Conference Proceeding
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    20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT by Meister, Tilo, Ishida, Koichi, Shabanpour, Reza, Boroujeni, Bahman K., Carta, Corrado, Munzenrieder, Niko, Petti, Luisa, Cantarella, Giuseppe, Salvatore, Giovanni A., Troster, Gerhard, Ellinger, Frank

    “…This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active…”
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    Conference Proceeding
  9. 9

    22.5 dB open-loop gain, 31 kHz GBW pseudo-CMOS based operational amplifier with a-IGZO TFTs on a flexible film by Ishida, Koich, Shabanpour, Reza, Boroujeni, Bahman K., Meister, Tilo, Carta, Corrado, Ellinger, Frank, Petti, Luisa, Munzenrieder, Niko S., Salvatore, Giovanni A., Troster, Gerhard

    “…This paper presents an operational amplifier based on pseudo-CMOS blocks and integrated in a flexible a-IGZO TFT technology. The circuit consists of only nMOS…”
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    Conference Proceeding
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