Search Results - "Sewell, J.S."

Transient characteristics of GaN-based heterostructure field-effect transistors by Kohn, E., Daumiller, I., Kunze, M., Neuburger, M., Seyboth, M., Jenkins, T.J., Sewell, J.S., Van Norstand, J., Smorchkova, Y., Mishra, U.K.

“…DC current-switching and power-switching transients of various GaN-based FET structures are investigated. Two different characteristics are compared, namely,…”
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High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC by Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

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High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC by Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The…”
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Dense heterogeneous integration for InP Bi-CMOS technology by Royter, Y., Patterson, P.R., Li, J.C., Elliott, K.R., Hussain, T., Boag-O'Brien, M.F., Duvall, J.R., Montes, M.C., Hitko, D.A., Sewell, J.S., Sokolich, M., Chow, D.H., Brewer, P.D.

“…InP Bi-CMOS technology capable of wafer-scale device-level heterogeneous integration (HI) of InP HBTs and CMOS has been developed. With this technology, full…”
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High performance 0.14 [micro]m gate-length AlGaN/GaN power HEMTs on SiC by Jessen, G.H, Fitch, R.C, Gillespie, J.K, Via, G.D, Moser, N.A, Yannuzzi, M.J, Crespo, A, Sewell, J.S, Dettmer, R.W, Jenkins, T.J, Davis, R.F, Yang, J, Khan, M.A, Binari, S.C

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Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy by Jessen, G.H, White, B.D, Bradley, S.T, Smith, P.E, Brillson, L.J, Van Nostrand, J.E, Fitch, R, Via, G.D, Gillespie, J.K, Dettmer, R.W, Sewell, J.S

“…Low energy electron-excited nano-luminescence (LEEN) spectroscopy has been used to correlate higher intensities of deep level emissions with higher ohmic…”
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Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT's by Liou, J.J., Jenkins, T.J., Liou, L.L., Neidhard, R., Barlage, D.W., Fitch, R., Barrette, J.P., Mack, M., Bozada, C.A., Lee, R.H.Y., Dettmer, R.W., Sewell, J.S.

“…The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is studied, and an improved physical noise model is developed…”
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Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub by Bozada, C.A., Barlage, D.W., Barrette, J.P., Dettmer, R.W., Mack, M.P., Sewell, J.S., Via, G.D., Yang, L.W., Helms, D.R., Komiak, J.J.

“…Heterojunction bipolar transistor devices and circuits were fabricated using thermal shunt and bathtub thermal management techniques. Broadband cascode MMICs…”
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Xs-MET-a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications by Cerny, C.L., Via, G.D., Ebel, J.L., DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Gillespie, J.K., Jenkins, T.J., Pettiford, C.I., Sewell, J.S., Ehret, J.E., Merkel, K., Wilson, A., Lyke, J.

“…The requirements for space-based integrated circuit applications are defined with an emphasis on being radiation tolerant and low power consuming. Flexible…”
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